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    RAYTHEON EMITTER PAD Search Results

    RAYTHEON EMITTER PAD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC1235F Rochester Electronics LLC MC1235 - Gate, ECL, CDFP14 Visit Rochester Electronics LLC Buy
    11C90DM Rochester Electronics LLC 11C90 - Prescaler, ECL Series Visit Rochester Electronics LLC Buy
    11C90DM/B Rochester Electronics LLC 11C90 - Prescaler, ECL Series Visit Rochester Electronics LLC Buy
    11C05DM/B Rochester Electronics LLC 11C05 - Prescaler, ECL Series Visit Rochester Electronics LLC Buy
    MC1218L Rochester Electronics LLC MC1218 - ECL to TTL Translator, ECL, CDIP14 Visit Rochester Electronics LLC Buy

    RAYTHEON EMITTER PAD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    raytheon emitter pad

    Abstract: No abstract text available
    Text: RAYTHEON-. SEMICONDUCTOR Lb 7 5 9 7 3 6 0 RAYTHEON» SEMICONDUCTOR Prelim inary Product Specifications Linear integrated C ircuits D e 7 5 ^ 7 3 ^ 0 DOOSODl 66C 0 5 0 0 1 LP165/365 Raytheon LP165/365 Micropower Programmable Quad Comparator Features • Single programming resistor tailors power,


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    LP165/365 LP165/365 54BSC 16-Lead 100BSC raytheon emitter pad PDF

    2n4080

    Abstract: 2N4260 2N4957 JAN JAN2N4957 2N4261 JAN raytheon npn raytheon emitter pad
    Text: RAYTHEON/ 57 SEMICONDUCTOR SMALL SIGNAL TRANSISTORS p r o d u c t s p e c ific a tio n s 7597360 R AY THEON CO» 27C Ultra High Speed Logic Switches •raytheonI GV 75T?3t,0 □ □ 0 3 5 5 e] 1 PNP 03559 D J - 37- / 3 Popular Types Description Ultra high speed Silicon epitaxial


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    2N4260 2N4261/JAN 2N4957/JAN 2N4261J 2N4957J 10Oil 0003St 050BSC 100BSC 54BSC 2n4080 2N4957 JAN JAN2N4957 2N4261 JAN raytheon npn raytheon emitter pad PDF

    2N3726

    Abstract: 45-BSC JAN2N2905A 2n2907a raytheon 2N2004 2N2907AJ 2N3503 RAYTHEON SP2907AQD 2N721
    Text: RAYTHEON/ SEMICONDUCTOR 7597360 RA YTH EO N . T4 I [f| 7 5 ^ 7 3 ^ 0 O D O S S D S 0 | ~ SEM ICO ND UCTOR 94D Product Specifications Small Signal Transistors 05505 D 7*- * 7 ~f 7 G B PNP Raytheon Medium Current General Purpose Amplifiers and Switches Description


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    7ST73b0 500mA. 2N2907A/JAN 2N2906A/JAN 2N2905A/JAN 2N2904A/JAN 65-1006B 100BSC 54BSC O-116) 2N3726 45-BSC JAN2N2905A 2n2907a raytheon 2N2004 2N2907AJ 2N3503 RAYTHEON SP2907AQD 2N721 PDF

    Untitled

    Abstract: No abstract text available
    Text: Special Functions RC4447 RC4447 Quad PIN Diode Switch Driver Features currents of the RC4447 are closely controlled through the use of Si-Cr thin-film resistor networks, resulting in repeatable ac character­ istics and a stable dc bias point. Well-matched


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    RC4447 RC4447 RM4447 20-lead Mil-Std-883 Mil-Std-883, PDF

    AT3904

    Abstract: raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209
    Text: RAYTHEON/ SEMICONDUCTOR 27E D • 7S^73bD DQDTBbT Raytheon Company Semiconductor Division S ■ 7^27-9*? Raytheon Transistor Dice Catalog I RAYTHEON/ SEMICONDUCTOR 27E D ■ TSTVBbO 0007370 1 ■ J-S7- 11 Features Shipping Formats ■ Wafer size 2'A inches, 3 inches


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    AT328A AT329A. BCY17-34 AT3906. AT3905 AT4125. AT4126 75cl73b0 0DD7373 AT3904 raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209 PDF

    SCHEMATIC DIAGRAM OF POWER SAVER DEVICE

    Abstract: power saver schematic diagram SCHEMATIC DIAGRAM OF electrical saver BV68 1530Q BM138 D9323 schottky transistor spice I1211 PIN DIODE .cir spice
    Text: Special Functions RC4447 RC4447 Quad PIN Diode Switch Driver Features • ■ ■ ■ ■ ■ ■ ■ currents of the RC4447 are closely controlled through the use of Si-Cr thin-film resistor networks, resulting in repeatable ac character­ istics and a stable dc bias point. Well-matched


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    RC4447 RC4447 Mil-Std-883 RM4447 20-lead SCHEMATIC DIAGRAM OF POWER SAVER DEVICE power saver schematic diagram SCHEMATIC DIAGRAM OF electrical saver BV68 1530Q BM138 D9323 schottky transistor spice I1211 PIN DIODE .cir spice PDF

    Untitled

    Abstract: No abstract text available
    Text: _ i _ s-RAYTHEON/ bb SEMICONDUCTOR d e Its ^ L iO DOOSOñi O T - 3 7~<5Product Specifications Sm all Signal Transistors G A PNP Raytheon Low Level, General Purpose Amplifiers and Switches Description G A PNP General purpose low power amplifier and


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    100mA. 2N3250A/JAN 2N3251A/JAN 5-1022A DDDS01S 27BSC 254BSC 050BSC 100BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: Section5 HE D | 7 5 c173fcjCl 0Q0feil35 Û | LM111/LH2111 RAYTHEON/ SEMICONDUCTOR T- LM111/LH2111 Voltage Comparators Description These low-input current voltage comparators are designed to operate over a wide range of supply voltages, including ±15V and single +5V


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    c173fcjCl 0Q0feil35 LM111/LH2111 LM111/LH2111 LH2111 LM111 16-lead Mil-Std-883B PDF

    22XISET

    Abstract: lp165
    Text: Comparators LP165/365 LP165/365 Micropower Programmable Quad Comparator Features • Single programming resistor tailors power, input currents, speed, and output current characteristics ■ Uncommitted emitters allow logic interface flexibility ■ Wide supply voltage range or dual supplies


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    LP165/365 LP165/365 22XISET lp165 PDF

    Untitled

    Abstract: No abstract text available
    Text: RAYTHEON/ SEMICONDUCTOR 33E D • 7S^73t,Q □□07471 1 B f R T N Product Specifications Sm all S ign a l Transistors C B NPN R a y tfe & o a i 1 7=-27-2 p * 7~-27-27 Medium Current General Purpose Amplifiers and Switches C B NPN Description General purpose medium power amplifier and


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    500mA. 2N2222A/JAN 2N2221A/JAN 2N2219A/JAN 2N2218A/JAN 968-9211um T-27-27 O-116) 14-Lead 100BSC PDF

    amplifier CV 203

    Abstract: 2N2708 2n3424 2N3423 2N918 JAN 2n917 die raytheon npn 0100BSC 254BSC 2n2857
    Text: RA YTHEON/ SE MI CO NDUCT OR 75 97360 RAYTHEON» SEMICON DU CT OR hi ]>F| 75T73bD ODDSDfli 66C 05081 D T~- 3 l~ O Product Specifications Small Signal V NPN Raytheon Ultra High Frequency Oscillator and


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    75T73bD 2N917 2N918/JAN 2N2608 2N2857 Fj7S173tO O-116) 14-Lead 100BSC 548SC amplifier CV 203 2N2708 2n3424 2N3423 2N918 JAN 2n917 die raytheon npn 0100BSC 254BSC 2n2857 PDF

    sp3725

    Abstract: 2N3252 raytheon 2n
    Text: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEO N. D E | ? 5 c173t.D 0 0 0 5 5 3 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS S E M IC O N D U C T O R 94D 05535 High Current, High Speed Switches RAYTHEON D T -ss*-/ 7 Popular Types Description T he CK is a gold doped transistor


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    3724/A 3725/A 3735/JA 2N3736 3737/JAN 2N4013 2N4014 2N4013, 2N3724 54BSC sp3725 2N3252 raytheon 2n PDF

    SP3467QDB

    Abstract: No abstract text available
    Text: RAYTHEON/ SEMICONDUCTOR T4 RAYTHEO N. TSTYBbO OGOS SMH 7 SMALL SIGNAL TRANSISTORS p r o d u c t specificatio n s 7597360 d ÊTJ S E M IC O N D U C T O R 94D 05543 High Current, High Speed Switches D i-si-cs' Popular Types Description The GK is a platinum doped transistor.


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    2N3467/JAN 2N3468/JAN 2N3762/JAN 2N3763/JAN O-116) 14-Lead 54BSC 100BSC SP3467QDB PDF

    Untitled

    Abstract: No abstract text available
    Text: RAY THE ON/ SEM IC O N D U C T OR 7597360 "TM RAYTHEON. D Ë J 75=1731.0 0005551 b SE M IC O N D U C T O R 94D Product Specifications Small Signal Transistors 0555 1 D 712S~-/3~ C J N PN Raytheon Ultra High Speed Switches CJ NPN Description High speed gold doped silicon epitaxial tran­


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    100mA. 2N2369A/JAN 2N4137 2N706A 2N2368 27BSC -050BSC 54BSC PDF

    2n3817

    Abstract: 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn
    Text: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEON. ^AYTUFnin RAYTHEON J 0005557 S E M IC O N D U C T O R 94D 05527 Low Level, Low Noise D j - z - f - Z ' l H j g h G a j n A m p | j f ¡e r s Popular Types Description G eneral purpose a m p lifier for low level, low noise and high gain amplifier


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    75T73fc 2604/JA 2605/JA 54BSC O-116) 14-Lead 100BSC 2n3817 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn PDF

    2N3640

    Abstract: 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894
    Text: RAYTHEON/ SEMICONDUCTOR hh ]> E |7 S ^ 7 3tD '- r - Product Specifications Small Signal Transistors Q O D Sm ? 5 7 - /S' G R PNP Raytheon Ultra High Speed Switches Description G R PNP Ultra high speed platinum doped silicon epitaxial PNP transistors useful for high speed


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    2N4208 2N2409 2N5910 2N2894A 65-1025B 050BSC 100BSC 27BSC 54BSC 2N3640 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894 PDF

    SCR 40 RIA 120

    Abstract: No abstract text available
    Text: Special Functions RC4444 RC4444 4 x 4 x 2 Balanced Switching Crosspoint Array Features • ■ ■ ■ ■ ■ Mask Pattern Low bidirectional Ron High Roff Excellent matching of gates Low capacitance High rate firing Predictable holding current Description


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    RC4444 RC4444 SCR 40 RIA 120 PDF

    2N2937

    Abstract: 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484
    Text: RAYTHEON/ "ä ? SEMICONDUCTOR 7597360 D eT | 7 5 ^ 7 3 ^ 0 G G D B S a S Ì 27C RAYTHEON CO» D Low Level, Low Noise, High Gain Amplifiers RAYTHEON CL 0353 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS NPN Popular Types Description General purpose am plifier for low


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    2N930/JAN 2N2484/JAN 2N3117 2N930JAN 2N2484JAN 54BSC 27BSC 100BSC 050BSC -100BSC 2N2937 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484 PDF

    Untitled

    Abstract: No abstract text available
    Text: RC4391 ?ST73tiG O O Oböfll T • f - RAYTHEON/ SEMICONDUCTOR RC4391 Inverting and Step-Down Switching Regulator The 4391 complements the other Raytheon switching regulator 1C, the RC4190. The 4190 is dedicated to step-up VOUT > VIN applica­ tions, while the 4391 was designed up for


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    RC4391 ST73tiG RC4190. 100pF PDF

    Untitled

    Abstract: No abstract text available
    Text: Special Functions RC4444 RC4444 4 x 4 x 2 Balanced Switching Crosspoint Array Mask Pattern Features • ■ ■ ■ ■ ■ Low bidirectional Ron High Ro ff Excellent matching of gates Low capacitance High rate firing Predictable holding current 2120 19 18


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    RC4444 RC4444 600X1 PDF

    rc4200 raytheon

    Abstract: rc4200 rm4200 analog multipliers
    Text: RC4200 RAYTHEON/ HE D I • 75^73^0 G Ü D tm S 3 | ■ Special Functions S EM IC O N D U C T O R T ~ ? 3 ' ^ ^ RC4200 Analog Multiplier over the full temperature range. This nonlinearity compensation combined with the low gain and offset drift inherent in a well designed


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    RC4200 250juA) 10siruut 173tjG rc4200 raytheon rc4200 rm4200 analog multipliers PDF

    Untitled

    Abstract: No abstract text available
    Text: Special Functions RC4200 RC4200 Analog Multiplier Features • High accuracy Non-linearity — 0.1% maximum Temperature coefficient — 0.005%/° C typical ■ Multiple functions Multiply, divide square, square root, RMS-to-DC conversion, AGC, and modulate/demodulate


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    RC4200 250/iA) 250pA) PDF

    RC4200

    Abstract: RC4200 equivalent DC to 500 MHz RMS-to-DC Converter rc4200 raytheon raytheon emitter pad
    Text: RC4200 Special Functions RC4200 Analog Multiplier over the full temperature range. This nonlinearity compensation combined with the low gain and offset drift inherent in a well designed monolithic chip provides a very low accuracy tempco. The excellent linearity and versatility were


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    RC4200 RC4200 85-01S64A 5-01883A 250/uA) 10sinm RC4200 equivalent DC to 500 MHz RMS-to-DC Converter rc4200 raytheon raytheon emitter pad PDF

    Untitled

    Abstract: No abstract text available
    Text: Raytheon Electronics Semiconductor Division RC5102 Dual A djustable Voltage R egulators • • • • • • • • • The RC5102, in combination with low Rds,on n-channel MOSFETs, provides a precision low-dropout dual voltage regulator for Pentium, Cyrix and Power PC® CPUs. By


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    RC5102 RC5102, RC5102 DS30005102 PDF