RAMBUS SLAVE Search Results

RAMBUS SLAVE Result Highlights (5)

Part	Manufacturer	Description
54L72J	Rochester Electronics LLC	54L72 - AND-OR Gated JK Master-Slave Flip-Flop
54H78FM	Rochester Electronics LLC	54H78 - Jbar-Kbar Flip-Flop, 2-Func, Master-slave Triggered, TTL, CDFP14
54H71DM	Rochester Electronics LLC	54H71 - J-K Flip-Flop, 1-Func, Master-slave Triggered, TTL, CDIP14
MC1214L	Rochester Electronics LLC	MC1214 - R-S Flip-Flop, 2-Func, Master-slave Triggered, ECL, CDIP14
SN54H78W	Rochester Electronics LLC	54H78 - J-K Flip-Flop, 2-Func, Master-slave Triggered, TTL, CDFP14

RAMBUS SLAVE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CY24272 Rambus XDR Clock Generator with Zero SDA Hold Time Rambus‚ XDR™ Clock Generator with Zero SDA Hold Time Features • Table 1. Device Comparison Meets Rambus Extended Data Rate XDR™ clocking requirements ■ 25 ps typical cycle-to-cycle jitter	Original	CY24272 28-pin CY24271 CY24272	PDF
Untitled Abstract: No abstract text available Text: CY24271 Rambus XDR Clock Generator Rambus R XDR™ Clock Generator Features • 300–800 MHz high speed clock support Meets Rambus Extended Data Rate (XDR™) clocking requirements ■ Quad (open drain) differential output drivers ■ Supports frequency multipliers: 3, 4, 5, 6, 8, 9/2, 15/2, and 15/4	Original	CY24271 28-pin	PDF
Untitled Abstract: No abstract text available Text: CY24271 Rambus XDR Clock Generator Rambus® XDR™ Clock Generator Features • 300–800 MHz high speed clock support Meets Rambus Extended Data Rate XDR™ clocking requirements ■ Quad (open drain) differential output drivers ■ Supports frequency multipliers: 3, 4, 5, 6, 8, 9/2, 15/2, and 15/4	Original	CY24271 28-pin	PDF
CY24271 Abstract: CY24271ZXC CY24271ZXCT LK1b XDR Rambus Text: CY24271 Rambus XDR Clock Generator Rambus R XDR™ Clock Generator Features • 300–800 MHz high speed clock support Meets Rambus Extended Data Rate (XDR™) clocking requirements ■ Quad (open drain) differential output drivers ■ Supports frequency multipliers: 3, 4, 5, 6, 8, 9/2, 15/2, and 15/4	Original	CY24271 28-pin CY24271 CY24271ZXC CY24271ZXCT LK1b XDR Rambus	PDF
Untitled Abstract: No abstract text available Text: CY24272 Rambus XDR Clock Generator with Zero SDA Hold Time Rambus XDR™ Clock Generator with Zero SDA Hold Time Features Meets Rambus Extended Data Rate XDR™ clocking requirements Device Comparison • 25 ps typical cycle-to-cycle jitter ❐ –135 dBc/Hz typical phase noise at 20 MHz offset	Original	CY24272	PDF
cmos cross reference manual Abstract: Rambus ASIC Cell Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus TM DRAM RDRAM TM is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling	Original	PD488130L 16M-BIT 16-Megabit P32G6-65A cmos cross reference manual Rambus ASIC Cell	PDF
uPD488170L Abstract: PD488170LG6-A60 ABS VI PD488170 NEC PD488170LG6 PD488170L UPD488170 Text: MOS INTEGRATED CIRCUIT µ PD488170L 18M-BIT Base Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus TM DRAM RDRAM is an extremely-high-speed CMOS DRAM organized as 1M word x 9 bits x 2 banks and capable of bursting up to 256 bytes of data at 1.67 ns per byte. The use of Rambus	Original	PD488170L 18M-BIT 18-Megabit uPD488170L PD488170LG6-A60 ABS VI PD488170 NEC PD488170LG6 PD488170L UPD488170	PDF
1227D-10 Abstract: ics9220 rambus xdr Text: ICS9220 Integrated Circuit Systems, Inc. TM TM Programmable Rambus XDR Clock Generator General Description Features The ICS9220 clock generator provides Programmable TM clock signals to support the Rambus XDR memory subsystem and Redwood logic interface. The ICS9220	Original	ICS9220 ICS9220 100MHz 28-pin MO-153 ICS9220yG 1227D--10/11/06 1227D-10 rambus xdr	PDF
uPD488170L Abstract: UPD488170 0005 adr cmos cross reference manual uPD48817 PD488170L Text: PRELIMINARY DATA SHEET PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus TM DRAM RDRAM TM is an extremely-high-speed CMOS DRAM organized as 2M words by 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling	Original	PD488170L 18M-BIT 18-Megabit P32G6-65A uPD488170L UPD488170 0005 adr cmos cross reference manual uPD48817 PD488170L	PDF
745 B36 diode Abstract: micron sensor spd 357 RM01 MT8VR6416A Text: PRELIMINARY‡ 32, 64, 128 MEG x 16/18 RAMBUS RIMM MODULES RAMBUS RIMM MODULE MT4VR3216A, MT4VR3218A, MT8VR6416A, MT8VR6418A, MT16VR12816A, MT16VR12818A For the latest data sheet revisions, please refer to the Micron Web site: www.micronsemi.com/datasheets/modds.html	Original	MT4VR3216A, MT4VR3218A, MT8VR6416A, MT8VR6418A, MT16VR12816A, MT16VR12818A 184-pin 128MB 256MB 745 B36 diode micron sensor spd 357 RM01 MT8VR6416A	PDF
Untitled Abstract: No abstract text available Text: ICS9220 Integrated Circuit Systems, Inc. TM TM Programmable Rambus XDR Clock Generator General Description Features The ICS9220 clock generator provides Programmable TM clock signals to support the Rambus XDR memory subsystem and Redwood logic interface. The ICS9220	Original	ICS9220 ICS9220 100MHz 28-pin MO-153 ICS9220yG 1227E--04/09/07	PDF
rambus slave Abstract: rambus channel Text: Rambus Channel Description Overview The Rambus Channel is a high-speed, byte-wide chip-to-chip interconnect designed to facilitate a 500 MHz data transfer rate between individual Rambus devices. As the foundation of every Rambus system, the Channel achieves this 2 nanosecond per byte	OCR Scan		PDF
RDRAM LG Abstract: HP16517A Lg rdram rambus LG RDRAM design LG rambus design Text: LG Semicon RAMBUS DRAM Design Information Chapter j Introduction to Channel Design The Rambus Channel is a high-speed, byte-wide, synchronous chip-to-chip interconnect designed to achieve 500 MB/ second data transfer rates between Rambus components. As the foundation of every Rambus system, the electrical	OCR Scan		PDF
rambus RAC Abstract: Rambus ASIC Cell rambus slave RAMBUS ASIC rambus channel Signal Path designer Rambus RDRAM ASIC RAC RAMBUS Text: Rambus ASIC Cell RAC Description Rambus System Overview The Rambus ASIC Cell (RAC™) is a standard macro cell used in ASIC designs to interface the core logic of a CMOS ASIC to a high speed Rambus Channel capable of transferring data at 2 nanoseconds per byte. The	OCR Scan		PDF

mkph Abstract: LG concurrent RDRAM Concurrent RDRAM IIPD488170 IPD488170LVN-A40-9 IPD488170LVN-A50-9 905 nec IC-3384 concurrent rdram NEC NEC RDRAM concurrent Text: Rambus DRAM PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT \|liP D 4 8 8 1 7 0 18M bit Rambus DRAM 1 Mword x 9bit x 2bank Description H The 18-Megabit Rambus DRAM (RDRAM™) is an extremely-high-speed CMOS DRAM organized asy\|M w o r th y 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling	OCR Scan	18-Megabit PD488170 IIPD488170 ED-7424) mkph LG concurrent RDRAM Concurrent RDRAM IIPD488170 IPD488170LVN-A40-9 IPD488170LVN-A50-9 905 nec IC-3384 concurrent rdram NEC NEC RDRAM concurrent	PDF
NEC RDRAM 36 Abstract: ADR 10 NEC PD488170L PD488170L RDRAM cross reference uPD488170L U/25/20/TN26/15/850/NEC RDRAM 36 Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling	OCR Scan	18M-BIT 18-Megabit P32GS-65A NEC RDRAM 36 ADR 10 NEC PD488170L PD488170L RDRAM cross reference uPD488170L U/25/20/TN26/15/850/NEC RDRAM 36	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 1M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling Logic (RSL)	OCR Scan	b45752S 0Gb411S	PDF
NEC RDRAM 36 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling	OCR Scan	uPD488130L 16M-BIT 16-Megabit P32G6-65A NEC RDRAM 36	PDF
Rambus RDRAM ASIC Abstract: RDRAM cross reference NEC RDRAM 36 REF05 Text: PRELIMINARY UATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling	OCR Scan	16M-BIT 16-Megabit P32Q64SA Rambus RDRAM ASIC RDRAM cross reference NEC RDRAM 36 REF05	PDF
uPD488031 Abstract: No abstract text available Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 1M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling Logic (RSL)	OCR Scan	11-OtO P32G6-65A uPD488031	PDF
REF05 Abstract: No abstract text available Text: PRELIMINARY bATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling	OCR Scan	uPD488130L 16M-BIT 16-Megabit P32G645A REF05	PDF
gm73v1892ah-16l Abstract: gm73v1892ah16l GM73V1892AH LG concurrent RDRAM GM73V1892 concurrent rdram LG 29C30 LG rdram concurrent LG GM73 Text: LG oSemicon e m i w u i l Co O O . . LLtd .I U . GM73 V1892AH16L GM73V1892AH17L 2,097,152 WORDS x79 BIT Rambus DRAM Description The GM 73V1892AH16L /' GM73V1892AH17L Rambus Dynamic Random Access Memory RDRAM	OCR Scan	V1892AH16L GM73V1892AH17L 73V1892AH16L GM73V1892AH16L GM73V1892AH17L SHP-32 gm73v1892ah-16l GM73V1892AH LG concurrent RDRAM GM73V1892 concurrent rdram LG 29C30 LG rdram concurrent LG GM73	PDF
PD488170L Abstract: NEC PD488170L 6A50 uPD488170LG NEC RDRAM 36 UPD488170LG6 Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK D escription The 18-M egabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling	OCR Scan	18M-BIT high01000107 PD488170L NEC PD488170L 6A50 uPD488170LG NEC RDRAM 36 UPD488170LG6	PDF
concurrent rdram NEC Abstract: NEC rdram concurrent 16MB NEC RDRAM concurrent concurrent RDRAM 72 Concurrent RDRAM concurrent rdram LG NEC concurrent rdram NEC Rambus LG concurrent RDRAM Text: NEC MOS INTEGRATED CIRCUIT ju ,P D 4 8 8 1 7 0 18M bit Rambus DRAM 1 Mword x 9bit x 2bank Description The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremeiy-high-speed CMOS DRAM organized as.gM woi [by 4 9 bits and capable of bursting up to 256 bytes of data at 2 nanoseconds per byte. The use of Rambus Signin	OCR Scan	18-Megabit 005555D I1PD488170 42752S UPD488170 ED-7424) b427525 concurrent rdram NEC NEC rdram concurrent 16MB NEC RDRAM concurrent concurrent RDRAM 72 Concurrent RDRAM concurrent rdram LG NEC concurrent rdram NEC Rambus LG concurrent RDRAM	PDF

RAMBUS SLAVE Search Results

RAMBUS SLAVE Result Highlights (5)

RAMBUS SLAVE Datasheets Context Search

Untitled

Untitled

Untitled

CY24271

Untitled

cmos cross reference manual

uPD488170L

1227D-10

uPD488170L

745 B36 diode

Untitled

rambus slave

RDRAM LG

rambus RAC

mkph

NEC RDRAM 36

Untitled

NEC RDRAM 36

Rambus RDRAM ASIC

uPD488031

REF05

gm73v1892ah-16l

PD488170L

concurrent rdram NEC