511000
Abstract: 51100 P-SOJ-26/20-1 511000BJ-70 Q67100-Q1056 Q67100-Q518 256KDRAM
Text: 1 M x 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time
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511000BJ-50/-60/-70
511000BJL-50/-60/-70
511000
51100
P-SOJ-26/20-1
511000BJ-70
Q67100-Q1056
Q67100-Q518
256KDRAM
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511000BJ7
Abstract: No abstract text available
Text: 1 M x 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time
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511000BJ-50/-60/-70
511000BJL-50/-60/-70
511000BJ7
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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QSC family
Abstract: No abstract text available
Text: In te l 87C196KT/87C196KS ADVANCED 16-BIT CHMOS MICROCONTROLLER Automotive —40°C to + 125°C Ambient High Performance CHMOS 16-Bit CPU Up to 32 Kbytes of On*Chip EPROM Up to 1 Kbyte of On-Chip Register RAM Up to 512 Bytes of Additional RAM (Code RAM)
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87C196KT/87C196KS
16-BIT
10-Bit
B7C196Kx
87C196KT/87C196KS
8XC196KT/KS
QSC family
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M511000A
Abstract: M511000 511000A HM511000AJP-7 HM511000AP-12 511000 cmos M5110 HM511000AJP7 M51100 511000AJ
Text: HM511000A Series ~ HM511000AL Series 1048576-Word x 1-Bit CMOS Dynamic RAM H M 511000A/ALP Series • DESCRIPTION The Hitachi HM511000A/AL series is a CMOS dynamic RAM organized 1048576-word x 1-bit. HM511000A/AL has realized higher density, higher perform
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HM511000A
HM511000AL
1048576-Word
HM511000A/AL
18-pin
20-pin
M511000A
M511000
511000A
HM511000AJP-7
HM511000AP-12
511000 cmos
M5110
HM511000AJP7
M51100
511000AJ
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM 511000A 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511000A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM 511000A is OKI's CMOS silicon gate process technology.
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11000A
576-WORD
MSM511000A
11000A
MSM511000Ai
MSM511000A
MSM511000AÂ
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM 511001 A_ 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511001A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM511001A is OKI's CMOS silicon gate process technology.
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576-WORD
MSM511001A
MSM511001AÂ
MSM511001
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HM511000AJP7
Abstract: m511000a m511000 511000a
Text: HM511000A Series ~ HM511000AL Seríes 1048576-Word x 1-Bit CMOS Dynamic RAM • DESCRIPTION HM 511000A /A LP Series The Hitachi HM511000A/AL series is a CMOS dynamic RAM organized 1048576-word x 1-bit. HM511000A/AL has realized higher density, higher perform
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HM511000A
HM511000AL
1048576-Word
HM511000A/AL
18-pin
20-pin
HM511000AJP7
m511000a
m511000
511000a
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Untitled
Abstract: No abstract text available
Text: HB56C18 S eries-1,048,576-Word x 8-Bit High Density Dynamic RAM Module • PIN DESCRIPTION ■ DESCRIPTION The HB56C18 is a 1M x 8 static column mode dynamic RAM module, mounted eight 1-Mbit DRAM H M 511002JP sealed in SOJ package. An outline of the
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HB56C18
576-Word
511002JP)
30-pin
HB56C18A,
HB56C18AT)
HB56C18B)
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HB56A18B
Abstract: HB56A18B-8A 30 pin SIMM socket 511000a 30-pin simm socket
Text: MB56A18 S eries-1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56A18 is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A18 is 30-pin single
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MB56A18
576-Word
HB56A18
511000JP)
30-pin
HB56A18A,
HB56A18AT)
HB56A10B)
HB56A18B
HB56A18B-8A
30 pin SIMM socket
511000a
30-pin simm socket
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM511002B 1,048,576-W ord x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The M SM 511002B is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM511002B is OKI's CM OS silicon gate process technology. The
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MSM511002B
511002B
MSM511002B
MSM511002B"
MSM511002Ba
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HB56A18B-8A
Abstract: SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221
Text: HB56A18 Series 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56A18 Is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM 511000JP sealed in SOJ package. An outline of the H B56A18 is 30-pin single
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HB56A18
576-Word
HM511000JP)
30-pin
HB56A18A,
HB56A18AT)
HB56A18B)
HB56A18B-8A
SIMM 30-pin
HB56A18B
HB56A18AT-6H
"30 pin simm"
30-pin SIMM RAM
30 pin SIMM socket
HB56A18B8A
zp 1401
we221
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The M SM 511001B is a new generation dynam ic RAM organized as 1,048,576 w ords x 1 bit. The technology used to fabricate the MSM511001B is OKI's CM OS silicon gate process technology. The
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MSM511001B
576-Word
511001B
MSM511001B
MSM511001B«
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5110 OOC/CL_ E2G0009-17-41 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM 511000C/CL is a 1,048,576-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM511OOOC/ CL achieves high integration, high-speed operation, and
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MSM5110
576-Word
E2G0009-17-41
511000C/CL
MSM511OOOC/
MSM511000C/CL
26/20-pin
20-pin
MSM511OOOCL
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bl 9 a2
Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
Text: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.
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MSM511000B/BL_
576-Word
MSM511000B/BL
cycles/64ms
MSM5110OOB/BL
242i4D
00177fa3
bl 9 a2
18-PIN
20-PIN
26-PIN
ZIP20-P-400
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HB56A19B
Abstract: HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A HB56A19
Text: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type
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HB56A19
576-Word
511000JP)
30-pin
HB56A19A,
HB56A19AT)
HB56A19B)
HB56A19B
HB56A19B8A
HB56A19B10A
HB56A19B-7H
511000a
HB56A19AT10A
HB56A19B-8A
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Untitled
Abstract: No abstract text available
Text: 1,048,576 W ORDS x 8 BIT DYNAMIC RAM MODULE PRELIMINARY DESCRIPTION The THM 81000AS/ASG/AL is a 1,048,576 words by 8 bits dynam ic RAM m odule w hich assem bled 8 pcs of T C 511000A J on the printed circuit board. T he THM 81000AS/AL is optim ized for application to
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81000AS/ASG/AL
11000A
81000AS/AL
THM81Q00
THMB1000
AS-70
THM81000AS/AL-70,
THM81020AL-70,
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DQ712
Abstract: 511000BJ-70
Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version
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511000BJ-50/-60/-70
511000BJL-50/-60/-70
DQ712
511000BJ-70
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511000B/BL-60
Abstract: hyb 511
Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 5110OOB/BJ/BZ-60/-70/-80 HYB 511000BUBJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60
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5110OOB/BJ/BZ-60/-70/-80
511000BUBJL/BZL-60/-70
511000B/BL-60)
511000B/BL-70)
511000B-80)
511000B/BL-60
hyb 511
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511000B-80
Abstract: hyb511000B 511000B/BL-70
Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000B/BJ/BZ-60/-70/-80 HYB 511000BL/BJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60
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511000B/BJ/BZ-60/-70/-80
511000BL/BJL/BZL-60/-70
511000B/BL-60)
511000B/BL-70)
511000B-80)
511000B-80
hyb511000B
511000B/BL-70
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TC51001
Abstract: tc511001bft
Text: 1,048,576 W ORD x PRELIMINARY 1 BIT DYN AM IC RAM DESCRIPTION The TC 51100IB P/B J/B Z/B FT is the new gen eratio n dynam ic RAM organized 1,048,576 words by 1 bit. The TC511001BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology as w ell as
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51100IB
TC511001BP/BJ/BZ/BFT
TC511001BP/BJ/BZ/BFT-60
TC51001
tc511001bft
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HM511002AP-6
Abstract: T10E
Text: HM511002A Series 1,048,576-word x 1-bit CMOS Dynamic RAM • DESCRIPTION H M 5U 002A P Series The Hitachi H M 511002A Series is a C M O S dynamic RAM organized 1,048,576word x 1-bit. H M 511002A has realized higher density, higher performance and vari ous functions by employing 1.3 jum C M OS process technology and some new
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HM511002A
576-word
18-pin
20-pin
HM511002AP-6
T10E
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511002A
Abstract: No abstract text available
Text: O K I semiconductor MSM511002A_ 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511002A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM511002A is OKI's CMOS silicon gate process technology.
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MSM511002A
576-WORD
MSM511002A
IMSM511002A»
511002A
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