QL5064
Abstract: verilog code for fibre channel AA23 Signal Path Designer
Text: QL80FC - QuickFCTM QuickLogic QL80FC Programmable Fibre Channel ENDEC QL80FC - QuickFC FEATURES Dual Port SRAM • ANSI Fibre Channel FC compatibility ■ 22 blocks (total of 25,344 bits) of dual-port RAM ■ Data rates up to 2.5 Gb/s supported ■ Configurable as RAM, ROM or FIFO
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Original
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QL80FC
QL5064
verilog code for fibre channel
AA23
Signal Path Designer
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KM424C64
Abstract: KM424C64P
Text: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: -1 0 -1 2 RAM access tim e t^Ac 100ns 120ns RAM access tim e (Icac) 25ns 30ns
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KM424C64
100ns
180ns
120ns
220ns
KM424C64
24-PIN
KM424C64P
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PDF
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REGULATOR S 812
Abstract: S-81250AG S81230AG S-2212R s812 S2212R S-81230AG
Text: SE IK O INSTRUMENTS U H fil D E I Ö1S3M43 Q D D D IU 2 | T-46-23-08 ’ S NON-VOLATILE MEMORY/NON-VOLATILE RAM f g g g ★Under development APPLICATIONS The non-volatile RAM NV RAM) is a non-volatile CMOS • Constants setting memory combining a static CMOS RAM and a non-volatile
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1S3M43
T-46-23-08
38mV/°
S-81230AG)
S-80230AG
S-80250AG
S-81230AG
S-81250AG
S-81250HG
TYP30
REGULATOR S 812
S81230AG
S-2212R
s812
S2212R
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PDF
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Untitled
Abstract: No abstract text available
Text: Xicnr Advance Information 1KBit X22C12 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 120 ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption — Active: 40 mA Max.
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X22C12
256x4
X22C12
3817FH
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PDF
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Untitled
Abstract: No abstract text available
Text: w X22C12 1KB it X22C12 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 150ns RAM Access Time * High Reliability —Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption —Active: 40mA Max. — Standby: 100|jA Max.
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X22C12
256x4
150ns
18-Pin
300-mil
X2212
X22C12
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PDF
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Untitled
Abstract: No abstract text available
Text: Jlaar X22C12 1KBit 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 150ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years • Low Power Consumption — Active: 40mA Max. — Standby: 100^iA Max.
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OCR Scan
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X22C12
256x4
150ns
18-Pin
300-mil
X2212
X22C12
0004E11
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Information 1KBit X iB B X22C12 ! 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION • High Performance CMOS — 120 ns RAM Access Time • High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years • Low Power Consumption — Active: 40 mA Max.
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OCR Scan
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X22C12
256x4
18-Pin
300-mil
X2212
X22C12
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PDF
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UM6612
Abstract: No abstract text available
Text: 4 Bit m icrocontroller Part No. D escription Page UM 6612 2K ROM , 256X4 RAM , 4X26 LCD, 16 I/O 4 b it u C . 3 UM 66P20 0.7K O TP R O M , 48X4 RAM , 12 I/O 4 b it u C . 24 1
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66P20
256X4
UM6612
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PDF
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KM424C257
Abstract: No abstract text available
Text: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual . Parameter Speed
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OCR Scan
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KM424C257
424C257
125ns
150ns
180ns
28-PIN
KM424C257
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PDF
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16kx8 ram
Abstract: 8096 microcontroller features rom 1024 1024x8 MSM6411B 8096 microcontroller serial ports MSC62408 MSC6458 NS400N seg lcd driver rom 512x4
Text: • LINE-UP AND TYPICAL CHARACTERISTICS •- LINE-UP AND TYPICAL CHARACTERISTICS LOW POWER HIGH SPEED OLMS-50/60 SERIES PRODUCT NAME ROM OLMS-64/65 SERIES RAM POWER CONSUMP TION FEATURES RAM ROM MACHINE CYCLE FEATURES MSM6404 4000 x 8 256x4 952 nS I/O: 36
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OLMS-50/60
MSM5052
MSM5054
MSM5055
MSM5056
MSM6051
MSM63S2
MSM6351
MSM6353
120x4
16kx8 ram
8096 microcontroller features
rom 1024 1024x8
MSM6411B
8096 microcontroller serial ports
MSC62408
MSC6458
NS400N
seg lcd driver
rom 512x4
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PDF
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Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS ^ XL24410 Series fic*Jfene* in £ * 4-Bit Microcontroller KEY FEATURES OVERVIEW • Low voltage, single power source VDD “ 2.0 - 5.5V ■ Memory — XL24410:4096 X 8 bits ROM; 256 X 4 RAM — XL24810:8192 X 8 bits ROM; 256 X 4 RAM — RAM for LCD; 36 x 4 bits
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XL24410
XL24810
XL2441ODS
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual po rt Architecture 256K X 4 bits RAM port 5 1 2 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual ' Parameter Speed
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OCR Scan
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KM424C257
424C257
125ns
150ns
180ns
ReC257
28-PIN
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PDF
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KM424C257
Abstract: No abstract text available
Text: KM424C257 CMOS VIDEO RAM 25 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual — _ Parameter Speed
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OCR Scan
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KM424C257
110ns
28-PIN
KM424C257
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PDF
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KM424C257
Abstract: 424C257 Video RAM
Text: PRELIMINARY M424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual Port DRAM. It consists of a 2 5 6 K X 4 dynamic random
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OCR Scan
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M424C257
125ns
150ns
100ns
180ns
424C257
28-PIN
KM424C257
KM424C257
Video RAM
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual
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KM424C257
125ns
28-PIN
0D13625
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual
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KM424C257
110ns
130ns
150ns
28-PIN
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PDF
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mcm6830
Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories
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MS800MM0S
MC3870
MC14S00B,
MC141000/1206
M2900
M10800
M6800
MC14500B,
MC141000/1200
mcm6830
EXORCISER motorola M68MM01A
7642T
MC68B54
transistor bf 175
motorola application note 6809 6844
MMS1117
EXORCISER motorola M68MM01A2
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PDF
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KM424C257
Abstract: 6520J 509Y EZ 742 vk 739 Video RAM
Text: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K X 4 bits RAM port 5 1 2 x 4 bits SAM port • Performance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual P a rà ifü fë r - - — Speed
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OCR Scan
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KM424C257
28-PIN
KM424C257
6520J
509Y
EZ 742
vk 739
Video RAM
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PDF
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Untitled
Abstract: No abstract text available
Text: . MICROCOMPUTERS R O M bit Data RAM/Work RAM (bit) LCD seg m en t Application M odel No. SM3503 SM3504 — LCD games SM3507 Calculators with clock Electronic organizers SM3508 SM3509 Application M odel No. SM3903 SM3905 SM565 Infrared remote controls i—
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SM3503
SM3504
SM3507
SM3508
SM3509
SM3903
SM3905
SM565
SM3503
SM3504
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PDF
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Untitled
Abstract: No abstract text available
Text: SONY C X K 5B 18120TM -12 65536-word x 18-bit High Speed Bi-CMOS Static RAM Description CXK5B18120TM is a high speed 1M bit Bi CM OS static RAM organized as 65536 words by 18 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed
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18120TM
65536-word
18-bit
CXK5B18120TM
1116mW
400mil
44pin
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PDF
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74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4,
HM-6508
HM-6518
HM-6551
HM-6561
74C929
74C930
74C920
HM-6504
74c920
ram 6164
6116 RAM
2116 ram
2064 ram
4016 RAM
4045 RAM
6264 cmos ram
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PDF
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Untitled
Abstract: No abstract text available
Text: CAT22C12! CAT22C121 - Industrial Temperature 1024-BIT 256x4 NONVOLATILE CMOS STATIC RAM DESCRIPTION FEATURES The Catalyst CAT22C121 Nonvolatile Random Ac cess Memory (NVRAM) is a 1024-bit device with a 256x4 organization. It features fully static CMOS
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CAT22C12!
CAT22C121
1024-BIT
256x4)
1024-bit
256x4
CAT22C12I
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PDF
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51426-2
Abstract: No abstract text available
Text: September 1992 O K I Semiconductor M SM 514262-JS/ZS_ 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bit dynam ic RAM and a 512-word by 4-bit SAM. The RAM and SAM operate in d ep en d en tly an d asynchronously.
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514262-JS/ZS_
144-Word
MSM514262
512-word
MSM514262
51426-2
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PDF
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Untitled
Abstract: No abstract text available
Text: A M I _ S6501 AMERICAN 1024 BIT 256x4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6501 family of 256 x 4-bit ultra low power CMOS RAMs offers fully static operation with a single
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S6501
256x4)
S6501
S6501L1,
S6501L
S6501L3
S6501L8
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PDF
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