Radar pallet
Abstract: RO6006 radar amplifier s-band ATC100A ATC100B
Text: BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933P-200
Radar pallet
RO6006
radar amplifier s-band
ATC100A
ATC100B
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Untitled
Abstract: No abstract text available
Text: BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933P-200
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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Untitled
Abstract: No abstract text available
Text: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS
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IEDM2006,
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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AU-1566
Abstract: AU155 AU-1433 electronic passive components catalog 2A102 geosat AU-1612-70 miteq c-22
Text: Back to Amplifier Home Page BIPOLAR AMPLIFIERS Table Of Contents AMPLIFIERS TO 2 GHz • • • • AU SERIES AM SERIES AUP SERIES AMP SERIES Amplifiers • Amplifiers By Frequency • Ancillary Equipment • Medium Power Amplifiers • Special Application Amplifiers
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C-22E
AU-1566
AU155
AU-1433
electronic passive components catalog
2A102
geosat
AU-1612-70
miteq c-22
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HMC6000LP711E
Abstract: No abstract text available
Text: OFF-THE-SHELF October 2012 Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Amplifier Modules Now Offer the Best Value! HMC-C059 Wideband LNA Module 19 New Featured Products! Wideband Multi-GHz Quantizer HMC9000 • 18 GHz Bandwidth
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HMC-C059
HMC9000
NL-1012
HMC6000LP711E
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AD83xx
Abstract: ADL5552 AD8318 AD8348 AD6633 Philips RF PREAMP AD83x AD9956 circuit diagram bluetooth streaming tv AD8341
Text: RF Communications T H E June 2004 A N A L O G D E V I C E S S O L U T I O N S B U L L E T I N IN THIS ISSUE Logarithmic Detector Covers 1 MHz to 8 GHz New High Linearity Mixer Products . . . . . . . . . . . . . . . . . . . . . . . 2 o accurately regulate the transmit power in wireless networks, measurement
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AD8318.
COMM-JUNE-2004A
SB04473-95-6/04
AD83xx
ADL5552
AD8318
AD8348
AD6633
Philips RF PREAMP
AD83x
AD9956
circuit diagram bluetooth streaming tv
AD8341
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Pallet VHF Power Amplifier
Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market
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BLF87x/88x)
BLF57x)
IS-95
BLF6G38S-25
OT608B
BLF6G38-25
OT608A
BLF6G38-10
Pallet VHF Power Amplifier
BLF578
BLF578 fm band
Pallet VHF Power Amplifier TELEVISION
blf574
BLF571
BLA6H1214-500
1200w power amplifier
LDMOS DVB-T transistors
power combiner 4 watt VHF
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hmc716
Abstract: 13617cf HMC734 HMC715 hmc 860 hmc700lp4 HMC700 MICROWAVE ASSOCIATES HMC734LP5E inphi
Text: MARCH 2009 OFF-THE-SHELF New DC to Millimeterwave ICs & Modules from Hittite 2009 Designer’s Guide Catalog Released! ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ VolumeA1NAL NALOG LO LO OG G & MIXED -SIGNAL ICS, MODULES,
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3A102
Abstract: Frequency Triplers AU-1433 diodes catalog au-1180 au 1350 AM-3A-000110 microwave product catalog AU-4A-0110 AU155
Text: AMPLIFIERS TO 2 GHz • AU SERIES • AM SERIES • AUP SERIES • AMP SERIES • • • • • • LOW NOISE MEDIUM POWER WIDE BAND MRI BANDS CELLULAR/PCN BANDS INMARSAT BANDS TABLE OF CONTENTS CONTENTS PAGE INTRODUCTION 2 GENERAL SPECIFICATIONS 2 OPTIONS
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C-22B
3A102
Frequency Triplers
AU-1433
diodes catalog
au-1180
au 1350
AM-3A-000110
microwave product catalog
AU-4A-0110
AU155
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EAR99
Abstract: hmc921 HMC245 hmc597 HMC767 hmc208
Text: Product Selection Guide Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB Cellular Infrastructure GSM, GPRS, CDMA, TD-SCDMA,
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OC-48
SG-0914
EAR99
hmc921
HMC245
hmc597
HMC767
hmc208
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SKY85703
Abstract: SKY77758
Text: New Products Spring 2014 Table of Contents New Products Featured New Products by Market Smartphones, Handsets and Tablets . . . . . . . 3 Consumer Networking . . . . . . . . . . . . . . . . . . 5 Smart Energy Solutions . . . . . . . . . . . . . . . . . . 7
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BRO399-14B
SKY85703
SKY77758
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Untitled
Abstract: No abstract text available
Text: CHK040A-SOA 40W Power Packaged Transistor GaN HEMT on SiC Description The CHK040A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and
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CHK040A-SOA
CHK040A-SOA
300mA,
DSCHK040ASOA3021
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BLS2731-10
Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-10 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 PINNING - SOT445C FEATURES • Suitable for short and medium pulse applications
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M3D324
BLS2731-10
OT445C
SCA60
125108/00/04/pp12
BLS2731-10
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
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TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4
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CHK040A-SOA
Abstract: CHK-04
Text: Advance Information: AI1011 40W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK040A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.
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AI1011
CHK040A
AN0019
AN0020
ES-CHK040A-SOA
AI1011182
CHK040A-SOA
CHK-04
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium
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RX1214B80W;
RX1214B130Y
OT439
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium
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RX1214B350Y
OT439
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NE5510279A
Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is
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STT 433
Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium
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RX1214B170W
FO-91B.
71106Eb
STT 433
variable capacitor
erie ceramic
RX1214B170W
Tekelec
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m1305 transistor
Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082
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NJMOP-07
NJM318
NJM741
NJM2107F
NJM2130
NJM425#
NJM5534
NJM353
NJM1458
NJM2041
m1305 transistor
w431
MRF1421C
Diode LT 4104
NJT1946A
7082a
NJT1949
magnetron 2j42
MSF1422B
magnetron 5kw
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