Untitled
Abstract: No abstract text available
Text: n - n z ÿ ^ t - K Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC40 Case : HQ-220 400V 8A •fiy -rx •trr50n s •7 J Æ -J U K •S R fflüS 0 y u - 7 U - r iiy *m m . OA, •a«, «g. • Æ tè ü a ra .r n fa RATINGS •¡Ê ë & ll^ ü Ë fë
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D8LC40
HQ-220
trr50n
50HzjESi
0003Hb3
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0496B
Abstract: No abstract text available
Text: SEMIKRON V r sm I f r m s m a x im u m v a lu e s fo r c o n tin u o u s o p e ra tio n V r rm 450 A SEMIPACK 2 Fast Diode1* Modules Ifa v (s in . 180 ; T case = 8 5 °C ; 5 0 Hz) V 220 A SKKE 301 F 1000 SKKE 301 F 10 1100 SKKE 301 F 11 1200 SKKE 301 F 12
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30zed,
0496B
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f3l60u
Abstract: SF3L60U
Text: Super Fast Recovery Diode Single Diode OUTLINE Package I FTO-220 SF3L60U U n it : m m W e ig h t 1.9« T y p 600V 3A 4.5 Feature •fê S iü Œ 2kVßfiE • • • • • • 7 2 5 1 -r • Switching Regulator • PFC(Power Factor Correction) • ra M ± FRD
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SF3L60U
FTO-220
F3L60U
J533-1
CJ533-1
f3l60u
SF3L60U
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0496B
Abstract: Diode semikron skke 120
Text: SEMIKRON V r sm I f r m s m a x im u m v a lu e s fo r c o n tin u o u s o p e ra tio n V r rm 220 A SEMIPACK 2 Fast Diode Modules I fav (s in . 180 ; Tease = 6 5 °C ; 5 0 Hz) V 140 A SKKE 120 F 1500 S K K E 120 F 15 1600 S K K E 120 F 16 Sym bol C ond itio ns
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IXGN40N60
Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES
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ISOPLUS247TM
O-220
PLUS247TM
O-263
O-268
O-247
ISOPLUS220
O-264
PLUS264TM
IXGA12N100U1*
IXGN40N60
IXGH24N60CD1
IXGR39N60BD1
ixgr32n60cd1
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bts132
Abstract: No abstract text available
Text: SIEMENS TEMPFET BTS132 VDS = 60 V lD = 24 A ^DS on = 0.065 Q • • • • • N channel E nhancem ent mode Logic level Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B ') O bserve circ u it design hints (see chapter Technical Inform ation)!
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BTS132
bts132
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BTS 110
Abstract: No abstract text available
Text: Sf E M E U S TEMPFET BTS110 VDS = 100 V lD = 10 A ^DS on = 0-2 O • • • • N channel Enhancem ent mode Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see chapter Technical Inform ation)!
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BTS110
7078-A
008-A
BTS 110
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T his pro d u ct is N -C han ne l M O S Field E ffe ct T ra n sisto r PA R T N U M B E R PACKAGE 2S K 305 3 Isolated T O -220 d e sig n e d for high cu rre n t sw itch ing ap plicatio ns.
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2SK3053
D12912EJ1V0DS00
P-45F)
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Untitled
Abstract: No abstract text available
Text: S IE M tfS IS TEMPFET VDS lD ^ D S o n • • • • • BTS131 = 50 V = 25 A = 0.06 O N channel E nhancem ent mode Logic level Tem perature sensor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see cha pter Technical Inform ation)!
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BTS131
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N0165
Abstract: No abstract text available
Text: SEMIKRON V r sm V r rm If r m s m a x im u m v a lu e fo r c o n tin u o u s o p e ra tio n 350 A If a v V V 400 220 A S K N D 165 S K N D 1 6 5 /0 4 600 600 S K N D 1 6 5 /0 6 800 800 S K N D 1 6 5 /0 8 1200 1200 S K N D 1 6 5 /1 2 C o n d itio n s S K N D 165
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N016514
N0165
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F20F6N
Abstract: 2SK2287
Text: 6 0 V v'J-X A^-MOSFET 60 V SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case I FTO-220 2SK2287 F20F6N 60 v 20 a ■ R A T IN G S ■ ÎÊ ÎÎÎi^ S Ë fê A b s o lu te m M a x im u m Item -V ^ C h annel T e m p e ra tu re * v - x t l D r a in -S o u rc e V o lta g e
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2SK2287
F20F6N)
FTO-220
s1/100
10/is,
F20F6N
2SK2287
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tunnel diodes
Abstract: tunnel diode e16 diode tunnel diode DO-7 2.TU
Text: TU 205/5, 205/10, 210/5, 210/10, 220/5, 220/10 P-Germanium tunnel diodes Tunnel diodes of the series TU 205, T U 2 1 0 and TU 220 are particularly designed for use as ultra-high-speed switches. Built into unvarnished glass cases 51 A 2 DIN 41880 D O -7 the diodes are available in 2 groups of maximum current tolerance
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TU210
Q62701
tunnel diodes
tunnel diode
e16 diode
tunnel diode DO-7
2.TU
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Untitled
Abstract: No abstract text available
Text: Tem ic TZMC. TELEFU N K EN Semiconductors Silicon Epitaxial Planar Z Diodes Features • Very sharp reverse characteristic • L ow reverse current level • A vailable with tighter tolerances • Very high stability • L ow noise Applications Voltage stabilization
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300K/W
50mmx50mmxl
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Untitled
Abstract: No abstract text available
Text: vS ü y TZMB. ▼ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • V e ry s h a rp re v e rs e c h a ra c te ris tic • L o w re ve rs e c u rre n t level • A v a ila b le w ith tig h te r to le ra n c e s • V e ry high s ta b ility
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D-74025
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: BZX55C2V4 FORWARD INTERNATIONAL ELECTRONICS LID. SEMICONDUCTOR TECHNICAL DATA THRU BZX55C39 TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES FE A TU R E S ' Vo l t age R a n g e : 2 . 4 V t o 3 9 V * Do u b l e sl ug t y p e c o n s t r u c t i o n DO-34/DO-35
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BZX55C2V4
BZX55C39
DO-34/DO-35
BZX55C30
BZX55C33
BZX55C36
BZX55C16
BZX55C18
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Untitled
Abstract: No abstract text available
Text: r z 7 < •^ 7 # S C S -T H O M S O N « l 5 iam iiiSTO<B M iBS BYW 200 A 8 0 -5 0 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES ■ VERY LOW CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE
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TYP33
Abstract: No abstract text available
Text: r Z Z SGS-THOMSON ^OT s iD(gi ^ 7# s BYT 08PI-200^400 FAST RECOVERY RECTIFIER DIODES . • ■ ■ VER Y LOW REVERSE RECOVERY TIME VER Y LOW SW ITCHING LOSSES LOW NOISE TURN-O FF SW ITCHING INSULATED : Capacitance 7pF Insulating voltage 2500 V rm s DO 220 AB
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08PI-200
08P1-200
TYP33
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Untitled
Abstract: No abstract text available
Text: 5bE D • 7^237 GGHm? f Z 7 SCS-THOMSON Ä 7# s6 [* ^ i^ O T Q * S ÒSI ■ S 6 T H T-03-tf s -th ohs on B Y W 5 1 - 5 0 A -> 2 0 0 A HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES ■ VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY
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T-03-tf
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DIODE Z1235
Abstract: Z1235 DIODE BZX 24 DIODE BZX 35 DIODE BZX 62 15 BZX DIODE bzx 18 bzx c12 DIODE Z1235 silicon type DIODE BZX
Text: BZX97 Silicon Z diode for 500 m W BZX 97 is an epitaxial silicon planar Z diode in a glass case 56 A 2 DIN 41883 D O -35 . It is used for the stabilization and limitation of voltages as well as for the generation of reference voltages at low power requirements.
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BZX97
DO-35)
Q62702
Q62702
10mA-
102mA
DIODE Z1235
Z1235
DIODE BZX 24
DIODE BZX 35
DIODE BZX 62
15 BZX
DIODE bzx 18
bzx c12
DIODE Z1235 silicon type
DIODE BZX
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B2X55C
Abstract: BZX 55 C 5V 8 bzx 8v2 ZENER bzx 46 c 43 55C8V2 BZX 3,3 B2X55 ZX 25
Text: r z 7 SGS-THOMSON LlOTOiDOS BZX 55 C 0V8 -> 200 ^ 7# 5 ZENER DIODES • . ■ ■ LARGE VOLTAGE RANGE : 0.8V TO 200V DOUBLE SLUG TYPE CONSTRUCTION PRO ELECTRON REGISTRATION CECC FOR TYPES : 2.7V TO 62V level quality assessment : L DESCRIPTION 500mW hermetically sealed glass silicon Zener
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500mW
B2X55C
BZX 55 C 5V 8
bzx 8v2
ZENER bzx 46 c 43
55C8V2
BZX 3,3
B2X55
ZX 25
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H467
Abstract: No abstract text available
Text: MICRO QUALITY / S E M IC O N D U C TO R . INC. High Voltage Rectifier Assemblies For X-Ray Apparatus H466 H467 H468 Micro Quality Sem iconductor, Inc. has designed this series of high voltage rectifier assem blies for use in X-R ay applications. Th e number of diodes m ounted in series
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Q62702-Z686
Abstract: z682 Z848 z688 bzx c36 Q62702-Z683 Q62702-Z851 Q62702-Z693 z850 Q62702-Z692
Text: BZX55 Silicon planar Z-Diode BZX 55 is a silicon planar Z -d io d e in a glass-case 51 A 2 DIN 418 8 0 D O -7 , for stabilizing and lim itin g voltages as w e ll as fo r generating reference voltages at low pow er requirements. The planar technique ensures a very lo w reverse current level,
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BZX55
BZX55
Q62702-Z686
z682
Z848
z688
bzx c36
Q62702-Z683
Q62702-Z851
Q62702-Z693
z850
Q62702-Z692
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES, 50 WATTS, DO-5 PACKAGE S t o « ill & mm N um ber 2 a tter Zener Voltage T ee l a t „ C u rre n t ¥> t«A> M aximum 2ener Im pedance at l,*S 0mA at l„ (m A ) 2,. (Ohm s) 1N33Q5 1NS3Q& 1N3307 1N3308 1N3309 6.8 7.5 8.2 9.1 10 1850 1700 1N3310
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1N33Q5
1N3307
1N3308
1N3309
1N3310
1N3312
1N3313
1N3314
1N3315
1N3316
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Untitled
Abstract: No abstract text available
Text: TOSHIBA U1ZB6.8-U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8-U1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION. p3 TRANSIENT SUPPRESSORS. • • • + Average Power Dissipation : P = 1.0 W Zener Voltage : Vz = 6.8~390 V Surface Mounting Plastic Mold Package
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8-U1ZB390
1ZB390
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