Untitled
Abstract: No abstract text available
Text: R5009ANX R5009ANX Datasheet Nch 500V 9A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.72W ID 9A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5009ANX
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: R5009ANX Nch 500V 9A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.72W ID 9A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5009ANX
O-220FM
R1120A
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M1407
Abstract: 4436 in 4436 00E-6 R5009ANX
Text: SPICE PARAMETER R5009ANX by ROHM TR Div. * R5009ANX NMOSFET model * Date: 2008/01/25 *D G S .SUBCKT R5009ANX 1 2 3 M1 11 22 3 3 MOS_N C1 1 3 15p D1 3 1 DDS R1 1 11 RTH .486 D2 11 21 DDG D3 22 21 DDG R2 2 22 30 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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R5009ANX
R5009ANX
0000E-6
1557E-6
000E-3
0000E6
0000E-3
00E-6
M1407
4436
in 4436
00E-6
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Untitled
Abstract: No abstract text available
Text: R5009ANX Datasheet Nch 500V 9A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.72W ID 9A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5009ANX
O-220FM
R1120A
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R5009ANX
Abstract: No abstract text available
Text: 10V Drive Nch MOSFET R5009ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 0.8 (1)Base 2.54 (2)Collector 2.54 0.75 2.6 (1) (2) (3) (3)Emitter zApplications Switching zInner circuit ∗1 zPackaging specifications Package
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R5009ANX
O-220FM
R5009ANX
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R5009ANX
Abstract: No abstract text available
Text: R5009ANX Nch 500V 9A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.72W ID 9A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5009ANX
O-220FM
R1120A
R5009ANX
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Untitled
Abstract: No abstract text available
Text: R5009ANX Transistors 10V Drive Nch MOSFET R5009ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)
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R5009ANX
O-220FM
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R5009ANX
Abstract: No abstract text available
Text: R5009ANX Transistors 10V Drive Nch MOSFET R5009ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)
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R5009ANX
O-220FM
R5009ANX
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RSD130P10
Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨܼׅDŽ 01 MOSFET Contents
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RUM002N02
RZM002P02
RUE002N02
RZE002P02
RUM002N05
RUE002N05
RZF013P01
RZL025P01
RZR020P01
RW1A013ZP
RSD130P10
rsd220n06
RDR005N25
RP1E090
RSD130P
R6015
RCD040N25
rcd080n25
RSD050N10
R5207AND
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RSD130P10
Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.
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5V/60V
R0039A
52P6214E
RSD130P10
RDR005N25
RCD040N25
rsd220n06
RSY200N05
RSD050N10
RCX100N25
R5207AND
RP1E090
rsy200
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sp8k10s
Abstract: SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX
Text: 2009 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.
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R0039A
51P6023E
sp8k10s
SP8K10
rsd220n06
RRS100P03
RTR011P02
SP8M41
RRS075P03
RRR035N03
rss065n06
R6010ANX
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RQW130N03
Abstract: rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130
Text: Product Catalog MOSFETs Discrete Semiconductors 2007-Dec. www.rohm.com ROHM MOSFETs In the society these days, MOSFET is getting rapidly popular as a key-device in many applications, such as mobile phones and automotive electronics. ROHM will keep developing new devices exactly following the
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2007-Dec.
50P5842E
RQW130N03
rqw200n03
sp8k10s
mosfet rqw 130
SP8K10
RQA200N03
mosfet rqa 130
RQW130
RQA130N03
RQW 130
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bd622d
Abstract: BD623d RPI-441C1E BD6221F BA6287 BD6387 BD6222 BD6222HFP BD6230F bd62
Text: Power Products Energy-saving PWM drivers H-bridge Drivers for DC Brush Motors ÎPWM BD621 □ / BD622D / BD623D series ROHM's easy-to-use high efficiency H-bridge drivers for DC brush motors enable speed control while driving by performing switching lïïik v
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BD621
BD622D
BD623D
PMR03
PMR10
PMR18
PMR25
PMR50
PMR100
-RPI-246E
RPI-441C1E
BD6221F
BA6287
BD6387
BD6222
BD6222HFP
BD6230F
bd62
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