R5 RF TRANSISTOR Search Results

R5 RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
CA3082	Rochester Electronics LLC	Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	Small Signal Bipolar Transistor
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

R5 RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
100 pf, ATC Chip Capacitor Abstract: motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer Text: MOTOROLA Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 PHOTOMASTER CASE 305C–02, STYLE 1 SOE200–PILL R4 R5 R6 + VCC R7 – Q1 R2 R8 R3 C9 C4 C3 C10 TL11 TL10 C5 TL5 RF INPUT C8 TL6	Original	PDF	MRF6401PHT/D MRF6401 SOE200 MRF6401 MRF6401PHT/D* 100 pf, ATC Chip Capacitor motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer
micro transistor 1203 Abstract: MRF18060A Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	GSM1805 MRF18060A MRF18060AS micro transistor 1203
smd wb1 transistor Abstract: smd transistor wb1 smd wb1 smd wb2 sot-23 wb2 wb1 sot-23 WB1 SOT23 J585 mosfet smd transistor M3 sot23 J585 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18090A MRF18090AS smd wb1 transistor smd transistor wb1 smd wb1 smd wb2 sot-23 wb2 wb1 sot-23 WB1 SOT23 J585 mosfet smd transistor M3 sot23 J585
smd transistor M3 sot23 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18090B MRF18090BS smd transistor M3 sot23
transistor J585 Abstract: transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18090B MRF18090BS transistor J585 transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd
transistor motorola 114-8 Abstract: motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18090A MRF18090AS transistor motorola 114-8 motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8
transistor J585 Abstract: J585 bc847 sot 23 bc847 chip SMD SOT23 cw BC847 smd BC847 SOT23 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18090B MRF18090BS transistor J585 J585 bc847 sot 23 bc847 chip SMD SOT23 cw BC847 smd BC847 SOT23
microstrip Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier	Original	PDF	MRF282SR1 MRF282ZR1 microstrip microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS
SMD Transistor z6 Abstract: transistor smd z3 smd z5 transistor transistor SMD Z2 smd transistor z4 BC847 SOT-23 PACKAGE 0805 Transistor z1 transistor 6 pin SMD Z2 capacitor 100 micro F transistor z3 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060AS Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18060A MRF18060AR3 MRF18060AS MRF18060ASR3 GSM1805 SMD Transistor z6 transistor smd z3 smd z5 transistor transistor SMD Z2 smd transistor z4 BC847 SOT-23 PACKAGE 0805 Transistor z1 transistor 6 pin SMD Z2 capacitor 100 micro F transistor z3
SMD Transistor z6 Abstract: Transistor z1 smd transistor z4 transistor 6 pin SMD Z2 10 k .5 watts smd resistors MRF18060A Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 GSM1805 SMD Transistor z6 Transistor z1 smd transistor z4 transistor 6 pin SMD Z2 10 k .5 watts smd resistors
smd transistor marking j8 Abstract: smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8 Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical	Original	PDF	MRF8HP21080H 14mployees, MRF8HP21080HR3 MRF8HP21080HSR3
smd transistor marking z3 Abstract: SMD Transistor z6 smd transistor z4 marking Z6 Capacitance smd transistor marking z1 Transistor z1 SMD marking Z4 transistor SMD Z2 SMD TRANSISTOR MARKING Z2 transistor 6 pin SMD Z2 Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	GSM1805 MRF18060AR3 MRF18060ALSR3 smd transistor marking z3 SMD Transistor z6 smd transistor z4 marking Z6 Capacitance smd transistor marking z1 Transistor z1 SMD marking Z4 transistor SMD Z2 SMD TRANSISTOR MARKING Z2 transistor 6 pin SMD Z2
imd 5210 Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	PDF	MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL

LTE impedance tuner Abstract: MRF8HP21080 CW12010T0100G MRF8HP21080HR3 J952 j179 j934 CW12010T0100GBK J9-22 j922 Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical	Original	PDF	MRF8HP21080H MRF8HP21080HR3 MRF8HP21080HSR3 LTE impedance tuner MRF8HP21080 CW12010T0100G J952 j179 j934 CW12010T0100GBK J9-22 j922
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth	Original	PDF	MRF8P23160WH MRF8P23160WHR3 MRF8P23160WHSR3 MRF8P23160WHR3
MRF8P23160WHSR Abstract: MRF8P23160WHR3 MRF8P23160WHS C3225X7R2A106KT tuner 2300 cw120 J-038 Text: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth	Original	PDF	MRF8P23160WH MRF8P23160WHR3 MRF8P23160WHSR3 MRF8P23160WHSR MRF8P23160WHS C3225X7R2A106KT tuner 2300 cw120 J-038
MJD310 Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282 Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	PDF	MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
MRFE6VP6300H Abstract: MRFE6VP6300HR3 MRFE6VP GA3095-ALC MRFE6VP6300H date AN1955 1812SMS-R12JLC ATC100B910JT500X J248 J980 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	PDF	MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300H MRFE6VP GA3095-ALC MRFE6VP6300H date AN1955 1812SMS-R12JLC ATC100B910JT500X J248 J980
transistor z4 n Abstract: NPN transistor mhz s-parameter mjd310 MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	PDF	MRF282/D MRF282SR1 MRF282ZR1 MRF282/D transistor z4 n NPN transistor mhz s-parameter mjd310 MRF282
MRF282 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	PDF	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 MRF282
MRF282 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	PDF	MRF282/D MRF282SR1 MRF282ZR1 DEVICEMRF282/D MRF282
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial	Original	PDF	MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3
SMD Transistor z6 Abstract: 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up	Original	PDF	MRF18090B/D MRF18090B MRF18090BS MRF18090B SMD Transistor z6 465B BC847 GSM1900 LP2951 MRF18090BS

R5 RF TRANSISTOR Search Results

R5 RF TRANSISTOR Result Highlights (5)

R5 RF TRANSISTOR Datasheets Context Search

100 pf, ATC Chip Capacitor

micro transistor 1203

smd wb1 transistor

smd transistor M3 sot23

transistor J585

transistor motorola 114-8

transistor J585

microstrip

SMD Transistor z6

SMD Transistor z6

smd transistor marking j8

Untitled

smd transistor marking z3

imd 5210

LTE impedance tuner

Untitled

MRF8P23160WHSR

MJD310

MRFE6VP6300H

transistor z4 n

MRF282

MRF282

Untitled

SMD Transistor z6