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    Text: Preliminary Datasheet RJK03M3DPA Silicon N Channel Power MOS FET Power Switching R07DS0767EJ0101 Rev.1.01 May 28, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.2 m typ. (at VGS = 10 V)


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    PDF RJK03M3DPA R07DS0767EJ0101 PWSN0008DC-B