Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HAF2014 R07DS0506EJ0400 Previous: REJ03G1140-0300 Rev.4.00 Jul 08, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
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Original
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PDF
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HAF2014
R07DS0506EJ0400
REJ03G1140-0300)
PRSS00ctronics
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HAF2014 R07DS0506EJ0400 Previous: REJ03G1140-0300 Rev.4.00 Jul 08, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
|
Original
|
PDF
|
HAF2014
R07DS0506EJ0400
REJ03G1140-0300)
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HAF2014 R07DS0506EJ0400 Previous: REJ03G1140-0300 Rev.4.00 Jul 08, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
|
Original
|
PDF
|
HAF2014
R07DS0506EJ0400
REJ03G1140-0300)
|