Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HAF2014 R07DS0506EJ0400 Previous: REJ03G1140-0300 Rev.4.00 Jul 08, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
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HAF2014
R07DS0506EJ0400
REJ03G1140-0300)
PRSS00ctronics
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HAF2014
Abstract: HAF2014-90 PRSS0004AC-A
Text: HAF2014 Silicon N Channel MOS FET Series Power Switching REJ03G1140-0300 Previous: ADE-208-953 Rev.3.00 Apr 27, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
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HAF2014
REJ03G1140-0300
ADE-208-953)
PRSS0004AC-A
HAF2014
HAF2014-90
PRSS0004AC-A
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HAF2014
Abstract: HAF2014-90 PRSS0004AC-A
Text: HAF2014 Silicon N Channel MOS FET Series Power Switching REJ03G1140-0200 Previous: ADE-208-953 Rev.2.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
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HAF2014
REJ03G1140-0200
ADE-208-953)
PRSS0004AC-A
HAF2014
HAF2014-90
PRSS0004AC-A
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HAF2005
Abstract: HAF2014 DSA003645
Text: HAF2014 Silicon N Channel MOS FET Series Power Switching ADE-208-953 Z 1st.Edition July 2000 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
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HAF2014
ADE-208-953
O-220AB
HAF2005
HAF2014
DSA003645
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Hitachi DSA00276
Abstract: No abstract text available
Text: HAF2014 Silicon N Channel MOS FET Series Power Switching ADE-208-953 Z 1st.Edition July 2000 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
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HAF2014
ADE-208-953
O-220AB
D-85622
Hitachi DSA00276
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HAF2014 R07DS0506EJ0400 Previous: REJ03G1140-0300 Rev.4.00 Jul 08, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
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Original
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PDF
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HAF2014
R07DS0506EJ0400
REJ03G1140-0300)
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HAF2014 R07DS0506EJ0400 Previous: REJ03G1140-0300 Rev.4.00 Jul 08, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
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HAF2014
R07DS0506EJ0400
REJ03G1140-0300)
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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HAF2014
Abstract: HAF2014-90 PRSS0004AC-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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HAF2005
Abstract: HAF2014
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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HD49323A
HA12134A
HA12141N
HA12155N
HA12163
HA12167F
HA12173
HA12179F
HA12181F
HA12187F
lvc16244
BC240
2sk3174
CBT1G125
LV2GT14A
HC32 Hitachi
HA13557A
transistor 2SC1162
H8 hitachi programming manual
30204SP
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5
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24EMP
BRC124ETP
BRC143ETP
BRC144ECM
CR3KM-12
FS10KM-6
FS10VS-6
FS16KM-6
FS16VS-6
HAT3017R
1002ds
4008ZB
2SC 9012
MP 1009 es
2SC 8050
20AAJ-8H
6020v4
2SC1417
2SC 8550
cr3as
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74ls111
Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 hitachi mosfet audio application note 74ls221 Spice 74LS123 spice 2sk2685 spice spice 74ls00
Text: INDEX GENERAL General Information Sales Locations Semiconductor Packages FLAT PANEL CONTROLLER / DRIVER Liquid Crystal Display Controller MICROCONTROLLER Microcontroller General Micro. Shortform Micro. Overview Micro. Hardware Manual Micro. Program. Manual
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Switchin2SC3512
2SC3513
2SC3793
2SC3867
2SC4126
2SC4196
2SC4197
2SC4260
2SC4261
2SC4262
74ls111
2SA872 spice
74LS122 spice model
hitachi mosfet power amplifier audio application
BC240
hitachi mosfet audio application note
74ls221 Spice
74LS123 spice
2sk2685 spice
spice 74ls00
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H7N1009MD
Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility
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CR3KM-12
CR6KM-12
CR8KM-12
O-220FN
OT-89
CR03AM-16
CR04AM-12
SC-59
CR03AM-12
CR05AM-12
H7N1009MD
HAT2153RJ
TRANSISTOR FS10KM
HAT2180RP
DIODE H5N
H7P1006MD
immobilizer antenna
CR3AS-12
HAT1081R
cr3as
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