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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HITK0203MP Silicon N Channel MOS FET Power Switching R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 68 m typ (VGS = 4.5 V, ID = 1.5 A)  Low drive current  High speed switching  2.5 V gate drive


    Original     		PDF HITK0203MP R07DS0481EJ0100 PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HITK0203MP Silicon N Channel MOS FET Power Switching R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 68 m typ (VGS = 4.5 V, ID = 1.5 A)  Low drive current  High speed switching  2.5 V gate drive


    Original     		PDF HITK0203MP R07DS0481EJ0100 PLSP0003ZB-A