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    RJP30h1

    Abstract: rjp30H RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT High Speed Power Switching
    Text: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.


    Original     		PDF RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30h1 rjp30H RJP30H1DPD Silicon N Channel IGBT High Speed Power Switching

    RJP30H1DPD

    Abstract: rjp30h1 rjp30 rjp30H
    Text: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.


    Original     		PDF RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30H1DPD rjp30h1 rjp30 rjp30H