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rjh60d2 Abstract: No abstract text available Text: Preliminary Datasheet RJH60D2DPP-M0 Silicon N Channel IGBT Application: Inverter R07DS0160EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D2DPP-M0 R07DS0160EJ0300 PRSS0003AF-A O-220FL) rjh60d2	PDF

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rjh60d2

Abstract: No abstract text available
Text: Preliminary Datasheet RJH60D2DPP-M0 Silicon N Channel IGBT Application: Inverter R07DS0160EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)

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RJH60D2DPP-M0 R07DS0160EJ0300 PRSS0003AF-A O-220FL) rjh60d2

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