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rjh60d2 Abstract: RJH60D2DPP-M0 RJH60D2DPP PRSS0003AF-A R07DS0160EJ0200 RJH60D2DPP-M0#T2 Text: Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0200 Previous: REJ03G1841-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D2DPP-M0 R07DS0160EJ0200 REJ03G1841-0100) PRSS0003AF-A O-220FL) rjh60d2 RJH60D2DPP-M0 RJH60D2DPP PRSS0003AF-A R07DS0160EJ0200 RJH60D2DPP-M0#T2	PDF

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rjh60d2

Abstract: RJH60D2DPP-M0 RJH60D2DPP PRSS0003AF-A R07DS0160EJ0200 RJH60D2DPP-M0#T2
Text: Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0200 Previous: REJ03G1841-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)

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RJH60D2DPP-M0 R07DS0160EJ0200 REJ03G1841-0100) PRSS0003AF-A O-220FL) rjh60d2 RJH60D2DPP-M0 RJH60D2DPP PRSS0003AF-A R07DS0160EJ0200 RJH60D2DPP-M0#T2

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