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    2SK4146

    Abstract: 2SK4146-S19 R07DS0130EJ0100
    Text: Preliminary Data Sheet 2SK4146 R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)


    Original     		2SK4146 R07DS0130EJ0100 2SK4146 2SK4146-S19-AY O-220, 2SK4146-S19 R07DS0130EJ0100 PDF

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    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SK4146 R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)


    Original     		2SK4146 R07DS0130EJ0100 2SK4146 2SK4146-S19-AY O-220, PDF