capacitor 226 35K
Abstract: 226 35K capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120
MRF21120S
capacitor 226 35K
226 35K capacitor
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capacitor 106 35K
Abstract: capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
MRF21120
capacitor 106 35K
capacitor 226 35K 022 electrolytic
226 35K
capacitor 226 35K
capacitor 106 35K tantalum
105 35K capacitor
capacitor 106 35K electrolytic
226 35K capacitor
106 35K 045
226 35K capacitor datasheet
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226 35k 051
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120
MRF21120S
MRF21120/D
226 35k 051
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226 35K capacitor
Abstract: 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
MRF21120
226 35K capacitor
226 35K
R 226 35k 029
capacitor 226 35K
capacitor 105 35K 102
capacitor 104 35k
R 226 35k 029 R
variable capacitor
105 35K capacitor
fm variable capacitor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120S
MRF21120
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capacitor 226 35K
Abstract: R 226 35k 226 35K capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120/D
capacitor 226 35K
R 226 35k
226 35K capacitor
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z40 mosfet
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110
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MRF21120R6
MRF21120/D
z40 mosfet
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226 35K capacitor
Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
226 35K capacitor
MRF21120
z40 mosfet
226 35K
capacitor 226 35K
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capacitor 106 35K
Abstract: 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET
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MRF21120R6
capacitor 106 35K
226 35K
106 35K
capacitor 106 35K tantalum
capacitor 106 35K electrolytic
105 35K capacitor
MRF21120R6
capacitor 226 35K
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c38 transistor
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
c38 transistor
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226 35K
Abstract: capacitor 226 35K capacitor 226 35K 022 electrolytic 105 35K capacitor 226 35K capacitor datasheet gps m 89 pin configuration 105 35K capacitor datasheet 226 35K capacitor marking us capacitor pf l1 MRF21120
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
226 35K
capacitor 226 35K
capacitor 226 35K 022 electrolytic
105 35K capacitor
226 35K capacitor datasheet
gps m 89 pin configuration
105 35K capacitor datasheet
226 35K capacitor
marking us capacitor pf l1
MRF21120
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A4514
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
A4514
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226 35K capacitor
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120R6
226 35K capacitor
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226 35K
Abstract: 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120R6
226 35K
105 35K capacitor
capacitor 226 35K 022 electrolytic
MRF21120
MRF21120R6
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panasonic inverter dv 707 manual
Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594
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Honeywell M6531A1007
Abstract: honeywell M7535A1001 TP939B1002 honeywell ml7420a3006 T7412A1018 C7085A1006 MT4-230-NC T7460B1009 Delta Electronics dps 730 T7414A1019
Text: Field Devices A L L Y O U N E E D I N H VAC C ON TR OL INCLUDED Product Catalog 2013 Documentation on CD QR Codes Actuators 13 Valves linear 33 Valves rotary 86 Frequency inverters 99 Sensors 110 Thermostats 152 Pneumatic Products 162 Miscellaneous 174 Old products
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20/38mm
Honeywell M6531A1007
honeywell M7535A1001
TP939B1002
honeywell ml7420a3006
T7412A1018
C7085A1006
MT4-230-NC
T7460B1009
Delta Electronics dps 730
T7414A1019
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zener diode a24
Abstract: ZENER A24 296k
Text: Make sure the next Card you purchase has. SB-36110VX VME Compatible Twelve Channel Synchro/Resolver-to-Digital Converter FEATURES • Up to 12 Independent Converter Channels • Accepts Synchro or Resolver Inputs • ±1 min Accuracy • Synthesized Reference
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SB-36110VX
32-Bit
SB-36110VX
1-800-DDC-5757
A5976
G-07/05-0
zener diode a24
ZENER A24
296k
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a2431
Abstract: 506k SB-36110VX 296k VME resolver
Text: Make sure the next Card you purchase has. SB-36110VX VME Compatible Twelve Channel Synchro/Resolver-to-Digital Converter FEATURES • Up to 12 Independent Converter Channels • Accepts Synchro or Resolver Inputs • ±1 min Accuracy • Synthesized Reference
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SB-36110VX
32-Bit
SB-36110VX
1-800-DDC-5757
A5976
H-01/06-0
a2431
506k
296k
VME resolver
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M452A1006
Abstract: M4450A1009 honeywell ml7420a3006 ML7420A DN100 PN16 honeywell M7420A CE0085AR0013 V5077 VF20T M7420A
Text: Field Devices Product Catalog 2010 Field Devices Find out more For more information visit our product catalog at http://ecc.emea.honeywell.com A l l Y O U N E E D I N H VA C C O N T R OL Product Catalog 2010 Automation and Control Solutions Honeywell GmbH
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D-71101
EN3B-0260GE51
R0110
M452A1006
M4450A1009
honeywell ml7420a3006
ML7420A
DN100 PN16
honeywell M7420A
CE0085AR0013
V5077
VF20T
M7420A
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T5N630 ABB
Abstract: bs 1600 pir sensor T5N630 1SDA054396R1 1SDA05 magnetic Contactor abb a9-30-10 ABB 145 PM 40-20 Breaker T5N400 ABB 1SDA054404R1 S202MC6
Text: Low Voltage Equipment Innovative Products for the Electrical Contractor - April 2006 Contractor Products Welcome The 5th Edition 1 Welcome to the fifth edition Epack Catalogue which continues to combine a range of products from ABB specially selected for the electrical contractor.
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1TXD000001P0205
T5N630 ABB
bs 1600 pir sensor
T5N630
1SDA054396R1
1SDA05
magnetic Contactor abb a9-30-10
ABB 145 PM 40-20 Breaker
T5N400 ABB
1SDA054404R1
S202MC6
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RTD Dual SENSING CIRCUIT
Abstract: constant current source strain gage circuits ac1212 circuit diagram of transducer Signal Conditioner 2B35 2B35K 205-240V 2B30 PROGRAMMABLE PRESSURE TRANSDUCER CIRCUIT 2B35J
Text: Precision, Triple Output Transducer Power Supply ANALOG DEVICES □ FEATURES Resistor Programmable Voltage or Current Output Voltage: +1V dc to +15V dc @ 125mA max Current: 100/liA to 10mA Vc o m p l =+10V Dual Fixed Output: +15V dc @ ±65mA max Excellent Regulation: Line ±0.01% max; Load ±0.02% max
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125mA
2B35K)
AC1212
100/M.
46/Iqut
RTD Dual SENSING CIRCUIT
constant current source strain gage circuits
ac1212
circuit diagram of transducer
Signal Conditioner 2B35
2B35K
205-240V
2B30
PROGRAMMABLE PRESSURE TRANSDUCER CIRCUIT
2B35J
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M51646SP
Abstract: No abstract text available
Text: M ITSUBISHI ICs VCR M51646SP/FP SECAM CHROMA PROCESSOR DESCRIPTION The M 5 1 6 4 6 fo r VHS SECAM VCRs divides color signal PIN CONFIGURATION (TOP VIEW) requencies by fo u r for recording, and m u ltip lie s th e m by our fo r playback. REC I N E GND 1[T
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M51646SP/FP
M51646SP
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2B35
Abstract: Model 2B35K Model 2B35J 115v 400Hz with 5V DC Analog devices 949 205-240V 2B30 2B35J 2B35K EMI filter 115v 400hz
Text: A N A LO G D E V IC E S □ Precision, Triple Output Transducer Power Supply FEATURES Resistor Programmable Voltage or Current Output Voltage: +1V dc to +15V dc @ 125mA max Current: 100/liA to 10mA Vc o m p l =+10V Dual Fixed Output: +15V dc @ ±65mA max
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125mA
2B35K)
CON52A
250mA
120mA.
2B35
Model 2B35K
Model 2B35J
115v 400Hz with 5V DC
Analog devices 949
205-240V
2B30
2B35J
2B35K
EMI filter 115v 400hz
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3sk fet
Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
Text: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM
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362TM
383TM
2SC388ATM
400MIN
2SC4317
2SC4322
3sk fet
transistor 2sk
4007F
2sk711
2SC388A
S3275
2sk241
3SK257
transistor 2sk 161
2SK type
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