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    R 1004 TRANSISTOR Search Results

    R 1004 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    R 1004 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU931 ST

    Abstract: BU931P BU931 bu931 equivalent BU931T
    Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 2 The devices are bipolar Darlington transistors


    Original     		PDF BU931 BU931P, BU931T O-247 O-220 BU931 ST BU931P BU931 bu931 equivalent BU931T

    Untitled

    Abstract: No abstract text available
    Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 High ruggedness electronic ignitions


    Original     		PDF BU931 BU931P, BU931T O-247 O-220 BU931

    NES 1004

    Abstract: 74AC244 EVM285SPD CCM TEXAS TP2104N3 1SS226 CM500 EL7156CS TC285SPD-30 TN2106
    Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-30 CCD IMAGE SENSOR SOCS092 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame


    Original     		PDF TC285SPD-30 SOCS092 30Frame/s NES 1004 74AC244 EVM285SPD CCM TEXAS TP2104N3 1SS226 CM500 EL7156CS TC285SPD-30 TN2106

    TX285SPD

    Abstract: TX285SPD-31 NES 1004 31 CCM TEXAS 74AC244 CM500 EL7156CS TP2104 TX285 EL7156
    Text: TM 1004 x 1002 PIXEL IMPACTRON TX285SPD-31 CCD IMAGE SENSOR SOCS094 – JANUARY2006 • • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame


    Original     		PDF TX285SPD-31 SOCS094 JANUARY2006 30Frame/s TX285SPD TX285SPD-31 NES 1004 31 CCM TEXAS 74AC244 CM500 EL7156CS TP2104 TX285 EL7156

    TC285SPD-B0

    Abstract: Peltier element 74AC244 CM500 EL7156CS TN2106 TP2104 ionization sensor
    Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame


    Original     		PDF TC285SPD-B0 SOCS093 30Frame/s TC285SPD-B0 Peltier element 74AC244 CM500 EL7156CS TN2106 TP2104 ionization sensor

    74AC244

    Abstract: TC285SPD-B0 1SS193 CCM TEXAS CM500 EL7156CS TN2106 TP2104 TC285-B0 NES 1004
    Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame


    Original     		PDF TC285SPD-B0 SOCS093 30Frame/s 74AC244 TC285SPD-B0 1SS193 CCM TEXAS CM500 EL7156CS TN2106 TP2104 TC285-B0 NES 1004

    2132R

    Abstract: HD6432138SW bc 107 equivalent TCL 21106 REJ09B0301-0400 Nippon capacitors
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF H8S/2138 H8S/2134 H8S/2138F-ZTATTM, H8S/2134F-ZTATTM, H8S/2132F-ZTATTM REJ09B0301-0400 2132R HD6432138SW bc 107 equivalent TCL 21106 REJ09B0301-0400 Nippon capacitors

    AY 5 4700

    Abstract: DATASHEET 33 1004 counter HD64F2138ATF20 IR 2137 IC hd64f2138afa20 8086 microprocessor block diagrammed with direction bc 357 transistor pin diagram DAC ic 0800 pin diagram TL 188 TRANSISTOR PIN DIAGRAM HD6432138SW
    Text: REJ09B0301-0400 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2138 Group, H8S/2134 Group,


    Original     		PDF REJ09B0301-0400 H8S/2138 H8S/2134 H8S/2138F-ZTATTM, H8S/2134F-ZTATTM, H8S/2132F-ZTATTM 16-Bit Family/H8S/2100 H8S/2138 H8S/2137 AY 5 4700 DATASHEET 33 1004 counter HD64F2138ATF20 IR 2137 IC hd64f2138afa20 8086 microprocessor block diagrammed with direction bc 357 transistor pin diagram DAC ic 0800 pin diagram TL 188 TRANSISTOR PIN DIAGRAM HD6432138SW

    2N2007

    Abstract: 2N3401 2n2002 transistors 2n 945 2sc 1919 2N2337 2N2003 2N945 2N1917 2N2944
    Text: small signal transistors 69 SILICON CHOPPER TRANSISTORS TO-18 TO-5 NUMBERS NUMBERS RATED BREAKDOWN VOLTAGES Vca I VCE I VES VEC OFS r ec(on) I Max. I. (Ohms) (rnA) Max. (mV) Is i(,uA) -1.5 -2.5 -1.0 -3.0 -10 -1.0 -2.S -1.5 -3.5 -2.0 -3.0 -1.0 -3.5 -2.0 -3.5


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: KSR2004 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • B uilt in bias R esistor ^ = 4 7 X 1 2 , R2=47Ki2) • C om plem ent to KSR 1004 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSR2004 47Ki2)

    HCPL-3700 Application note 1004

    Abstract: varistor xf 075 zener diode cross reference IC 7414 not gate with schmitt trigger working of ic 7414 MC6821 AN 1004 Threshold Sensing for Industrial Control Systems with the HCPL-3700 Interface Optocoupler 7414 NOT gate ic HCPL-3700 OPTOCOUPLER 3700
    Text: t g | Sa c k a r S application NOTE 1004 Threshold Sensing For Industrial Control Systems With the HCPL-3700 Interface Optocoupler IN TR O D U C TIO N The use of electronic logic cirtuitry in most applications outside of a controlled environment very quickly brings the


    OCR Scan     		PDF HCPL-3700 HCPL-3700 Application note 1004 varistor xf 075 zener diode cross reference IC 7414 not gate with schmitt trigger working of ic 7414 MC6821 AN 1004 Threshold Sensing for Industrial Control Systems with the HCPL-3700 Interface Optocoupler 7414 NOT gate ic OPTOCOUPLER 3700

    samsung NAND memory

    Abstract: No abstract text available
    Text: SMFV008 SmartMedia Document Title 8M X 8 Bit Sm artM edia™ Card Revision H istory Revision No. H istory Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 10ms Max. —> 4ms(Max.) 2. Changed Valid Block N u m b e r: 1004(Min.) -> 1014(Min.)


    OCR Scan     		PDF SMFV008 samsung NAND memory

    Untitled

    Abstract: No abstract text available
    Text: XÉñ 10-1500 MHZ LOW NOISE T0-8 CASCADABLE AMPLIFIER HEW LETT PACKARD HAMP-1004 HAMP-1004TXV T E C H N IC A L DATA A P R IL 1985 Features 12.96 10 .510 WIDE 1 dB BANDWIDTH 5-1650 MHz ' 12.44 ¡ 0 . 490 ) ' D IA . LOW NOISE FIGURE 4.0 dB at 1500 MHz ' 11.69 0 .460 ) ;


    OCR Scan     		PDF HAMP-1004 HAMP-1004TXV

    Untitled

    Abstract: No abstract text available
    Text: RN1001 ~RN1006 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1001, RN1002, RN1003 RN 1004, RN1005, RN1006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 5.1 MAX. • W ith Built-in Bias Resistors


    OCR Scan     		PDF RN1001 RN1006 RN1001, RN1002, RN1003 RN1005, RN2001 RN2006

    Untitled

    Abstract: No abstract text available
    Text: FMA4 h "7 > v 7, $ /T ra n s is to rs rm m Mk/g PNP y i j a > h 7 > 7 ^ ^ < > A — $r K 7 -f >Vlnverter Driver Epitaxial Planar Dual Mini-Mold PNP Silicon Transistor • T t - r o u S H / Dimensions U n it: mm 1) 7 , - I t - 5 K M " .'; 2 • 0<T> h 7 > v 7 $ J r t l L T t ' 5 0


    OCR Scan     		PDF

    FMA4

    Abstract: No abstract text available
    Text: K *7 > V 7s $ / T r a n s i s t o r s ROHM F CO LT» Ä 4 P FM A4 40E X fc?2 y t V ~ ? T D B 7020=^ DDDt3D2 7 ^ *3 -9 o Epitaxial Planar Dual M ini-M o ld PNP Silicon Transistor ^JfivH ill/D im ensions Unit:mm) 1) K / \ * 7 ^ - v T- 2) zm<n h 7 > '>'X £ <7)fêtëfr'* 3 -o T


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 198W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 47kfl, R2 = 47kQ Ordering Code Pin Configuration WRs Q62702-C2283 1= B Package 2=E o Marking BCR 198W II CO


    OCR Scan     		PDF 47kfl, Q62702-C2283 OT-323 Thermal05 6E35b05

    LT 745 S

    Abstract: tunnel diode General Electric
    Text: 1. T e s t R e s u lt s A. Life Test Results Table 1 shows the life test results of B Series C 2MOS IC. B Series is classified into SSI Family less than 100 transistors and MSI Family (More than transistisqrs) . T a b le 1 TYPE TEST ITEMS High Temp. DC Bias


    OCR Scan     		PDF

    f256c

    Abstract: F245C F245B F 245C
    Text: N - Channel Junction Field Effect Transistors M A X IM U M R A T IN G S T Y PE NO. CASE I dss Yfs Im A m m hos) Pd B ^ gss (mW ) (V) m in m ax m in m ax V GS(ofT) ciss crss NF (V) (P F ) (PF ) (dB) m in m ax m ax max max B F 244A T O -9 2 D A 300 30 2 6.5


    OCR Scan     		PDF F256C F245C F245B F 245C

    4242A

    Abstract: TIP41-TIP42
    Text: SGS-THOMSON RÆOM§miOT@KS TIP41 /41 A/41 B/41C TIP42/42A/42B/42C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The TIP41, TIP41 A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package intended for use in medium


    OCR Scan     		PDF TIP41 B/41C TIP42/ 2A/42B/42C TIP41, TIP41B TIP41C O-220 TIP42, 4242A TIP41-TIP42

    C1004

    Abstract: 2SC1623-L6 2SC1623L6 1N4148 2N5551 2sc1623 l6
    Text: Preliminary Specification RCL Semiconductors Ltd. Dual Flashing EL Lamp Driver IC_C1004 GENERAL DESCRIPTION C1004 is a series of 2 ELs driver with flashing which is designed in Poly Gate CMOS technology. It can work under 3V or 1.5V DC power supply. C1004 can support EL1 and EL2 output pins to control 2 ELs to


    OCR Scan     		PDF C1004 2N5551 2SC1623-L6 1N4148 2SC1623-16 2SC1623L6 2N5551 2sc1623 l6

    T1P41B

    Abstract: 4242A tip41 TIP41 TIP42
    Text: 7^2=1537 □ D S ^ S 4 CJ 3 • SGS-THOMSON LiCTliMO S ' 1 -'2 >2 > - \ TIP41 41 A/41 B/41C TIP42/42A/42B/42C S G S- THOMS ON 3DE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The TIP41, TIP41 A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedeo


    OCR Scan     		PDF TIP41 B/41C TIP42/42A/42B/42C TIP41, TIP41B TIP41C O-220 TIP42, TIP42A, T1P41B 4242A TIP41 TIP42

    transistor 355

    Abstract: 1005 TRANSISTOR
    Text: Philips Semiconductors Product specification NPN general purpose transistor PMBTA06 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max, 80 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose switching and amplification in e.g.


    OCR Scan     		PDF PMBTA06 PMBTA56. transistor 355 1005 TRANSISTOR

    uc1002

    Abstract: No abstract text available
    Text: MP6001 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o MOTOR CONTROL APPLICATIONS. FEATURES . Package with Heat Sink Isolated to Lead. . High Collector Power Dissipation.


    OCR Scan     		PDF MP6001 uc1002