BU931 ST
Abstract: BU931P BU931 bu931 equivalent BU931T
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 2 The devices are bipolar Darlington transistors
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BU931
BU931P,
BU931T
O-247
O-220
BU931 ST
BU931P
BU931
bu931 equivalent
BU931T
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Untitled
Abstract: No abstract text available
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 High ruggedness electronic ignitions
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BU931
BU931P,
BU931T
O-247
O-220
BU931
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NES 1004
Abstract: 74AC244 EVM285SPD CCM TEXAS TP2104N3 1SS226 CM500 EL7156CS TC285SPD-30 TN2106
Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-30 CCD IMAGE SENSOR SOCS092 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame
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TC285SPD-30
SOCS092
30Frame/s
NES 1004
74AC244
EVM285SPD
CCM TEXAS
TP2104N3
1SS226
CM500
EL7156CS
TC285SPD-30
TN2106
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TX285SPD
Abstract: TX285SPD-31 NES 1004 31 CCM TEXAS 74AC244 CM500 EL7156CS TP2104 TX285 EL7156
Text: TM 1004 x 1002 PIXEL IMPACTRON TX285SPD-31 CCD IMAGE SENSOR SOCS094 – JANUARY2006 • • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame
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TX285SPD-31
SOCS094
JANUARY2006
30Frame/s
TX285SPD
TX285SPD-31
NES 1004 31
CCM TEXAS
74AC244
CM500
EL7156CS
TP2104
TX285
EL7156
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TC285SPD-B0
Abstract: Peltier element 74AC244 CM500 EL7156CS TN2106 TP2104 ionization sensor
Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame
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TC285SPD-B0
SOCS093
30Frame/s
TC285SPD-B0
Peltier element
74AC244
CM500
EL7156CS
TN2106
TP2104
ionization sensor
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74AC244
Abstract: TC285SPD-B0 1SS193 CCM TEXAS CM500 EL7156CS TN2106 TP2104 TC285-B0 NES 1004
Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame
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Original
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TC285SPD-B0
SOCS093
30Frame/s
74AC244
TC285SPD-B0
1SS193
CCM TEXAS
CM500
EL7156CS
TN2106
TP2104
TC285-B0
NES 1004
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PDF
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2132R
Abstract: HD6432138SW bc 107 equivalent TCL 21106 REJ09B0301-0400 Nippon capacitors
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8S/2138
H8S/2134
H8S/2138F-ZTATTM,
H8S/2134F-ZTATTM,
H8S/2132F-ZTATTM
REJ09B0301-0400
2132R
HD6432138SW
bc 107 equivalent
TCL 21106
REJ09B0301-0400
Nippon capacitors
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AY 5 4700
Abstract: DATASHEET 33 1004 counter HD64F2138ATF20 IR 2137 IC hd64f2138afa20 8086 microprocessor block diagrammed with direction bc 357 transistor pin diagram DAC ic 0800 pin diagram TL 188 TRANSISTOR PIN DIAGRAM HD6432138SW
Text: REJ09B0301-0400 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2138 Group, H8S/2134 Group,
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REJ09B0301-0400
H8S/2138
H8S/2134
H8S/2138F-ZTATTM,
H8S/2134F-ZTATTM,
H8S/2132F-ZTATTM
16-Bit
Family/H8S/2100
H8S/2138
H8S/2137
AY 5 4700
DATASHEET 33 1004 counter
HD64F2138ATF20
IR 2137 IC
hd64f2138afa20
8086 microprocessor block diagrammed with direction
bc 357 transistor pin diagram
DAC ic 0800 pin diagram
TL 188 TRANSISTOR PIN DIAGRAM
HD6432138SW
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2N2007
Abstract: 2N3401 2n2002 transistors 2n 945 2sc 1919 2N2337 2N2003 2N945 2N1917 2N2944
Text: small signal transistors 69 SILICON CHOPPER TRANSISTORS TO-18 TO-5 NUMBERS NUMBERS RATED BREAKDOWN VOLTAGES Vca I VCE I VES VEC OFS r ec(on) I Max. I. (Ohms) (rnA) Max. (mV) Is i(,uA) -1.5 -2.5 -1.0 -3.0 -10 -1.0 -2.S -1.5 -3.5 -2.0 -3.0 -1.0 -3.5 -2.0 -3.5
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Untitled
Abstract: No abstract text available
Text: KSR2004 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • B uilt in bias R esistor ^ = 4 7 X 1 2 , R2=47Ki2) • C om plem ent to KSR 1004 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR2004
47Ki2)
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HCPL-3700 Application note 1004
Abstract: varistor xf 075 zener diode cross reference IC 7414 not gate with schmitt trigger working of ic 7414 MC6821 AN 1004 Threshold Sensing for Industrial Control Systems with the HCPL-3700 Interface Optocoupler 7414 NOT gate ic HCPL-3700 OPTOCOUPLER 3700
Text: t g | Sa c k a r S application NOTE 1004 Threshold Sensing For Industrial Control Systems With the HCPL-3700 Interface Optocoupler IN TR O D U C TIO N The use of electronic logic cirtuitry in most applications outside of a controlled environment very quickly brings the
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HCPL-3700
HCPL-3700 Application note 1004
varistor xf 075
zener diode cross reference
IC 7414 not gate with schmitt trigger
working of ic 7414
MC6821
AN 1004 Threshold Sensing for Industrial Control Systems with the HCPL-3700 Interface Optocoupler
7414 NOT gate ic
OPTOCOUPLER 3700
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samsung NAND memory
Abstract: No abstract text available
Text: SMFV008 SmartMedia Document Title 8M X 8 Bit Sm artM edia™ Card Revision H istory Revision No. H istory Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 10ms Max. —> 4ms(Max.) 2. Changed Valid Block N u m b e r: 1004(Min.) -> 1014(Min.)
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SMFV008
samsung NAND memory
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Untitled
Abstract: No abstract text available
Text: XÉñ 10-1500 MHZ LOW NOISE T0-8 CASCADABLE AMPLIFIER HEW LETT PACKARD HAMP-1004 HAMP-1004TXV T E C H N IC A L DATA A P R IL 1985 Features 12.96 10 .510 WIDE 1 dB BANDWIDTH 5-1650 MHz ' 12.44 ¡ 0 . 490 ) ' D IA . LOW NOISE FIGURE 4.0 dB at 1500 MHz ' 11.69 0 .460 ) ;
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HAMP-1004
HAMP-1004TXV
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Untitled
Abstract: No abstract text available
Text: RN1001 ~RN1006 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1001, RN1002, RN1003 RN 1004, RN1005, RN1006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 5.1 MAX. • W ith Built-in Bias Resistors
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RN1001
RN1006
RN1001,
RN1002,
RN1003
RN1005,
RN2001
RN2006
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Untitled
Abstract: No abstract text available
Text: FMA4 h "7 > v 7, $ /T ra n s is to rs rm m Mk/g PNP y i j a > h 7 > 7 ^ ^ < > A — $r K 7 -f >Vlnverter Driver Epitaxial Planar Dual Mini-Mold PNP Silicon Transistor • T t - r o u S H / Dimensions U n it: mm 1) 7 , - I t - 5 K M " .'; 2 • 0<T> h 7 > v 7 $ J r t l L T t ' 5 0
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FMA4
Abstract: No abstract text available
Text: K *7 > V 7s $ / T r a n s i s t o r s ROHM F CO LT» Ä 4 P FM A4 40E X fc?2 y t V ~ ? T D B 7020=^ DDDt3D2 7 ^ *3 -9 o Epitaxial Planar Dual M ini-M o ld PNP Silicon Transistor ^JfivH ill/D im ensions Unit:mm) 1) K / \ * 7 ^ - v T- 2) zm<n h 7 > '>'X £ <7)fêtëfr'* 3 -o T
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 198W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 47kfl, R2 = 47kQ Ordering Code Pin Configuration WRs Q62702-C2283 1= B Package 2=E o Marking BCR 198W II CO
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47kfl,
Q62702-C2283
OT-323
Thermal05
6E35b05
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LT 745 S
Abstract: tunnel diode General Electric
Text: 1. T e s t R e s u lt s A. Life Test Results Table 1 shows the life test results of B Series C 2MOS IC. B Series is classified into SSI Family less than 100 transistors and MSI Family (More than transistisqrs) . T a b le 1 TYPE TEST ITEMS High Temp. DC Bias
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f256c
Abstract: F245C F245B F 245C
Text: N - Channel Junction Field Effect Transistors M A X IM U M R A T IN G S T Y PE NO. CASE I dss Yfs Im A m m hos) Pd B ^ gss (mW ) (V) m in m ax m in m ax V GS(ofT) ciss crss NF (V) (P F ) (PF ) (dB) m in m ax m ax max max B F 244A T O -9 2 D A 300 30 2 6.5
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F256C
F245C
F245B
F 245C
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4242A
Abstract: TIP41-TIP42
Text: SGS-THOMSON RÆOM§miOT@KS TIP41 /41 A/41 B/41C TIP42/42A/42B/42C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The TIP41, TIP41 A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package intended for use in medium
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TIP41
B/41C
TIP42/
2A/42B/42C
TIP41,
TIP41B
TIP41C
O-220
TIP42,
4242A
TIP41-TIP42
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PDF
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C1004
Abstract: 2SC1623-L6 2SC1623L6 1N4148 2N5551 2sc1623 l6
Text: Preliminary Specification RCL Semiconductors Ltd. Dual Flashing EL Lamp Driver IC_C1004 GENERAL DESCRIPTION C1004 is a series of 2 ELs driver with flashing which is designed in Poly Gate CMOS technology. It can work under 3V or 1.5V DC power supply. C1004 can support EL1 and EL2 output pins to control 2 ELs to
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C1004
2N5551
2SC1623-L6
1N4148
2SC1623-16
2SC1623L6
2N5551
2sc1623 l6
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PDF
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T1P41B
Abstract: 4242A tip41 TIP41 TIP42
Text: 7^2=1537 □ D S ^ S 4 CJ 3 • SGS-THOMSON LiCTliMO S ' 1 -'2 >2 > - \ TIP41 41 A/41 B/41C TIP42/42A/42B/42C S G S- THOMS ON 3DE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The TIP41, TIP41 A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedeo
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TIP41
B/41C
TIP42/42A/42B/42C
TIP41,
TIP41B
TIP41C
O-220
TIP42,
TIP42A,
T1P41B
4242A
TIP41 TIP42
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PDF
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transistor 355
Abstract: 1005 TRANSISTOR
Text: Philips Semiconductors Product specification NPN general purpose transistor PMBTA06 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max, 80 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose switching and amplification in e.g.
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PMBTA06
PMBTA56.
transistor 355
1005 TRANSISTOR
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uc1002
Abstract: No abstract text available
Text: MP6001 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o MOTOR CONTROL APPLICATIONS. FEATURES . Package with Heat Sink Isolated to Lead. . High Collector Power Dissipation.
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MP6001
uc1002
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