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    QUADRANT SILICON PHOTODIODE Search Results

    QUADRANT SILICON PHOTODIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    HA9P2556-9Z Renesas Electronics Corporation 57MHz, Wideband, Four Quadrant, Voltage Output Analog Multiplier Visit Renesas Electronics Corporation
    OPT301M Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 Visit Texas Instruments Buy

    QUADRANT SILICON PHOTODIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Select Products Here TOX 9101 Quadrant Silicon Photodetector Go DESCRIPTION FEATURES The TOX 9101 is an N-Type quadrant silicon photodiode with quadrant separation of 0.0254 mm 0.001 inch . These photodiodes are typically used as position sensors for applications such as optical


    Original     		PDF com/catalog/tox9101/tox9101

    PSS1515Q-6-TO18

    Abstract: PSS1515Q-6-C Silicon Photodiode Chip Photodiode, nm NEP
    Text: DATA SHEET PSS1515Q-6-TO18 SILICON PHOTODIODE TYPE PSS1515Q-6-TO18 PSS1515Q-6-TO18 is a quadrant silicon photodiode with a very small active area of 0.3 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently


    Original     		PDF PSS1515Q-6-TO18 PSS1515Q-6-TO18 PSS1515Q-6-C. PSS1515Q-6-C Silicon Photodiode Chip Photodiode, nm NEP

    quadrant photodiode

    Abstract: PSS33Q-6-C PSS33Q-6-TO5
    Text: DATA SHEET PSS33Q-6-C SILICON PHOTODIODE TYPE PSS33Q-6-C CHIP PSS33Q-6-C is a quadrant silicon photodiode chip with an active area of 1.42 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently used in


    Original     		PDF PSS33Q-6-C PSS33Q-6-C PSS33Q-6-TO5. quadrant photodiode PSS33Q-6-TO5

    Silicon Photodiode Chip

    Abstract: TO5 package quadrant photodiode PSS33Q-6-TO5 To5 transistor PSS33Q-6-C rise time of silicon photodiode photodiode chip silicon
    Text: DATA SHEET PSS33Q-6-TO5 SILICON PHOTODIODE TYPE PSS33Q-6-TO5 PSS33Q-6-TO5 is a quadrant silicon photodiode chip with an active area of 1.42 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently used in conjunction with laser beams for alignment and target acquisition. It is mounted in a


    Original     		PDF PSS33Q-6-TO5 PSS33Q-6-TO5 PSS33Q-6-C. Silicon Photodiode Chip TO5 package quadrant photodiode To5 transistor PSS33Q-6-C rise time of silicon photodiode photodiode chip silicon

    quadrant photodiode

    Abstract: PSS1515Q-6-C Silicon Photodiode Chip
    Text: DATA SHEET PSS1515Q-6-C SILICON PHOTODIODE TYPE PSS1515Q-6-C PSS1515Q-6-C is a quadrant silicon photodiode chip with an active area of 0.3 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently used in conjunction with laser beams for alignment and target acquisition. This chip may be mounted


    Original     		PDF PSS1515Q-6-C PSS1515Q-6-C PSS1515Q-6-TO5. quadrant photodiode Silicon Photodiode Chip

    TOX9108

    Abstract: large area quadrant photodiode quadrant photodiode quadrant PIN
    Text: Select Products Here Go DESCRIPTION TOX 9108 Large Area Silicon Quadrant PIN Photodiode FEATURES The TOX 9108 is a high speed, quadrant-geometry, high-resistivity P-type silicon photodiode. It is a precision device designed specifically for application in laser alignment


    Original     		PDF com/catalog/tox9108/tox9108 TOX9108 large area quadrant photodiode quadrant photodiode quadrant PIN

    max232 rts cts

    Abstract: QP100-6 QP1.16-6 quadrant detector QP50-6 QP50-6-SD
    Text: Data Sheet Pacific Silicon Sensor Inc. Quadrant Photodiodes: Positioning Detectors Quadrant Photodiodes are an array of 4 individual photodiodes on a single Silicon substrate. This guarantees that each of the elements will match closely to each other in their specifications and


    Original     		PDF QP50-6 QP100-6 QP50-6SD 50mm2 max232 rts cts QP100-6 QP1.16-6 quadrant detector QP50-6 QP50-6-SD

    S239P

    Abstract: quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239
    Text: TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted


    Original     		PDF S239P D-74025 quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239

    LARGE SURFACE AREA PHOTODIODE

    Abstract: large area quadrant photodiode quadrant photodiode quadrant silicon photodiode QP50-6 QP50-6-TO8 QP50-6-SM 50 um photodiode
    Text: Data Sheet Pacific Silicon Sensor Inc. QP50-6-SM LARGE AREA QUADRANT SILICON PHOTODIODE QP50-6-SM QP50-6-SM is a large area quadrant silicon photodiode with a total active area of 50 mm2, in a surface mounting package. The part features very small separation between segments of 42 µm.


    Original     		PDF QP50-6-SM QP50-6-SM QP50-6-TO8. LARGE SURFACE AREA PHOTODIODE large area quadrant photodiode quadrant photodiode quadrant silicon photodiode QP50-6 QP50-6-TO8 50 um photodiode

    large area quadrant photodiode

    Abstract: quadrant photodiode LARGE SURFACE AREA PHOTODIODE quadrant silicon photodiode PSS-QP50-6-SM
    Text: Data Sheet Pacific Silicon Sensor Inc. PSS-QP50-6-SM LARGE AREA QUADRANT SILICON PHOTODIODE PSS-6-SM PSS-QP50-6-SM is a large area quadrant silicon photodiode with a total active area of 50mm2, in a surface mounting package. The part features very small separation between segments of 42µm. The


    Original     		PDF PSS-QP50-6-SM PSS-QP50-6-SM 50mm2, large area quadrant photodiode quadrant photodiode LARGE SURFACE AREA PHOTODIODE quadrant silicon photodiode

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection YAG YAG-444-4AH Silicon PIN Quadrant Detector Key Features and Benefits The YAG series high-performance Si PIN photodiodes are well-suited for applications such as munition guidance, laser spot tracking and others. E T YAG series of Silicon PIN quadrant detectors are


    Original     		PDF YAG-444-4AH YAG-444-4AH-Rev

    large area quadrant photodiode

    Abstract: quadrant photodiode LARGE SURFACE AREA PHOTODIODE QP50-6 PSS-QP50-6-C PSS-QP50-6-SM rise time of photodiode
    Text: DATA SHEET PSS-QP50-6-C LARGE AREA QUADRANT SILICON PHOTODIODE PSS-QP50-6-C PSS-QP50-6-C is a large area quadrant silicon photodiode with very small separation between quadrants 42 µm . The total active area is 50 mm2. The photodiode may be biased with a maximum voltage of 15 volts. This


    Original     		PDF PSS-QP50-6-C PSS-QP50-6-C PSS-QP50-6-SM) ACTIV42 large area quadrant photodiode quadrant photodiode LARGE SURFACE AREA PHOTODIODE QP50-6 PSS-QP50-6-SM rise time of photodiode

    1e15

    Abstract: No abstract text available
    Text: SCA-006CQD Silicon PIN Photodiode Data Sheet Description Applications The SCA-006CQD features a four matched quadrant • • • • • elements and are a high sensitive silicon PIN photodiodes for Position Sensing Optical Encoders Optical Alignment Angular Displacement


    Original     		PDF SCA-006CQD SCA-006CQD 320nm MIL-PRF-19500 1e15

    SCA-006CQD

    Abstract: quadrant photodiode annular anode
    Text: SCA-006CQD Silicon PIN Photodiode Data Sheet Description Applications The SCA-006CQD features a four matched quadrant • • • • • elements and are a high sensitive silicon PIN photodiodes for Position Sensing Optical Encoders Optical Alignment Angular Displacement


    Original     		PDF SCA-006CQD SCA-006CQD 320nm quadrant photodiode annular anode

    quadrant photodiode

    Abstract: No abstract text available
    Text: PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Quadrant Type PDU-C203-Q DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] QUARTZ WINDOW CAP WELDED 0.030 [0.76] Ø0.325 [8.25] Ø0.250 [6.35] 0.168 [4.26] 0.075 [1.91] WIRE BONDS CL 0.500 [12.70] MIN


    Original     		PDF PDU-C203-Q 100-PDU-C203-Q quadrant photodiode

    Untitled

    Abstract: No abstract text available
    Text: PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Quadrant Type PDU-C204-Q DETECTORS INC. PACKAGE DIMENSIONS INCH mm 0.182 [4.62] Ø0.550 [13.97] Ø0.475 [12.07] 0.032 [0.81] 0.075 [1.91] QUARTZ WINDOW CAP 0.032 [0.81] 0.500 [12.70] MIN CL Ø0.600


    Original     		PDF PDU-C204-Q 100-PDU-C204-Q

    PDB-C204

    Abstract: quadrant photodiode
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Quadrant Type PDB-C204 DETECTORS INC. PACKAGE DIMENSIONS INCH mm 0.182 [4.62] Ø0.550 [13.97] Ø0.475 [12.07] 0.032 [0.81] 0.075 [1.91] WINDOW CAP 0.032 [0.81] 0.500 [12.70] MIN C L Ø0.600 [15.24]


    Original     		PDF PDB-C204 PDB-C204 quadrant photodiode

    Untitled

    Abstract: No abstract text available
    Text: PHOTONIC DETECTORS INC. Silicon Photodiode, Near I.R. Photoconductive Quadrant Type PDI-C204-F PACKAGE DIMENSIONS INCH mm 0.182 [4.62] Ø0.550 [13.97] Ø0.475 [12.07] 0.075 [1.91] 0.032 [0.81] WINDOW CAP 0.032 [0.81] 0.500 [12.70] MIN C L Ø0.600 [15.24]


    Original     		PDF PDI-C204-F PDI-C204-F 75x10-14 100-PDI-C204-F

    quadrant photodiode

    Abstract: No abstract text available
    Text: «Of T0X9108 Large Area Silicon Quadrant PIN Photodiode Taxas Optoelectronics, Inc. DESCRIPTION FEATURES Quadrant Geometry For Alignment and Tracking Applications Diameter of Active Area, 0.650 Inch Rise and Fall Times, 10 ns Typ at 900 nm Wavelength Dark Current 500 nA Typ per Quadrant


    OCR Scan     		PDF T0X9108 000D524 IH375) quadrant photodiode

    S 239 P

    Abstract: S239P
    Text: Te m ic TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted


    OCR Scan     		PDF S239P S 239 P

    quadrant photodiode

    Abstract: SFH244S t2856
    Text: SFH244S SILICON FOUR QUADRANT PHOTODIODE FEATURES Maxim um Ratings * Silicon Photodiode in Planar Technology Operating and Storage Temperature T0p, T3 tg .-40°C to +80°C Isolation Voltage fV,s) . 100 V


    OCR Scan     		PDF SFH244S SFH244 quadrant photodiode SFH244S t2856

    Siemens sfh204

    Abstract: siemens SFH nm SFH204
    Text: SIEMENS AKTIEN6ESELLSCHAF 4?E V m ä23SbOS 0027M5S 3 « S I E G SIEM ENS SFH204 SILICON FOUR QUADRANT PHOTODIODE T-HI-5I Dimensions in Inches mm 21 (5 .4 ) FEATURES MEASUREMENT IN v !" • Miniature Size • Four Quadrant Active Sections • Close Spacing of Contacts, 12 ¿tm


    OCR Scan     		PDF 23SbOS 0027M5S SFH204 Siemens sfh204 siemens SFH nm SFH204

    Untitled

    Abstract: No abstract text available
    Text: T O X 9 10 1 Q u a d ra n t S ilic o n P h o to d e te c to r DESCRIPTION FEATURES The TOX 9101 is an N-Type quadrant silicon photodiode with quadrant separation of 0.0254 mm 0.001 inch . These photodiodes are typically used as position sensors for applications such as


    OCR Scan     		PDF 18918EF.

    SFH244

    Abstract: No abstract text available
    Text: SIEMENS SFH244 S SILICON TOUR QUADRANT PHOTODIODE Package Dimensions in Inches mm lel-141 (0.3) |A l (2 0) — *j p" *-oca,'on jn ° 322± 04 ( 8 .2 ± 0 . 1) Anode D .118±.008 (3.0*02) FEATURES M axim um Ratings * Silicon Photodiode in Planar Technology


    OCR Scan     		PDF SFH244 lel-141 33x10-â 5x1012 850nm A53b3at 0007btib fl23b32b 0007fci4?