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    Bourns Inc 4605X-101-224LF

    RES ARRAY 4 RES 220K OHM 5SIP
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    DigiKey 4605X-101-224LF Bulk 2,000 1
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    Bourns Inc 4605X-101-203LF

    RES ARRAY 4 RES 20K OHM 5SIP
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    DigiKey 4605X-101-203LF Bulk 1,900 1
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    Mouser Electronics 4605X-101-203LF 256
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    CTS Corporation 745X101222JP

    RES ARRAY 8 RES 2.2K OHM 2512
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    DigiKey 745X101222JP Reel 4,000
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    Mouser Electronics 745X101222JP 2,264
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    Bourns Inc 4605X-101-201LF

    RES ARRAY 4 RES 200 OHM 5SIP
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    Bourns Inc 4605X-101-220LF

    RES ARRAY 4 RES 22 OHM 5SIP
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    Newark 4605X-101-220LF Bulk 2,000
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    5X1012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCX RF

    Abstract: HCD220
    Text: OCXO Sine Output HCD220 Specifications Product Parameters Frequency range: Optional SMA/B/C/BNC/MCX RF connector s 10.00 PIN 50.00 17.00 15.90 A A Fixing holes M3 tapped. Penetration 5mm max. A Freq adjust (+ve) 2 Fine adjust 3 Freq adjust (-ve) 4 Isolated RF output


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    PDF HCD220 5x10-7 HCD220/DRFND HCD220/FTFND HCD220/DRFNA HCD220/FTFNA 1x10-9 2x10-10 MCX RF HCD220

    Untitled

    Abstract: No abstract text available
    Text: BPV21F L Vishay Telefunken Silicon PIN Photodiode Description BPV21F(L) is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters


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    PDF BPV21F D-74025 16-Nov-99

    BPV21F

    Abstract: BPV21FL BPV23FL
    Text: BPV21F L Vishay Telefunken Silicon PIN Photodiode Description BPV21F(L) is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters


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    PDF BPV21F D-74025 16-Nov-99 BPV21FL BPV23FL

    M9101

    Abstract: M9103 Disciplined Rubidium Oscillator SCPI-99 M9100 M910 antenna CDM time base reference m9101d
    Text: Introduces M9100/M9101/M9103 Series GPSDO Global Positioning Satellite Disciplined Oscillators Features:  Long-Term Stratum-I Performance - better than 5x10-12 averaged over 24 hours  High Accuracy 1 PPS LVDS Output Signal - Phase Synchronized to better than


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    PDF M9100/M9101/M9103 5x10-12 5x10-12) RS-232 M9101 M9103 Disciplined Rubidium Oscillator SCPI-99 M9100 M910 antenna CDM time base reference m9101d

    INA110KP

    Abstract: 2N2222A plastic instrumentation amplifier with offset adjust MPC800 AD524 AD624 INA110 INA110AG INA110BG RG113
    Text: INA110 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK ● AMPLIFICATION OF HIGH IMPEDANCE SOURCES


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    PDF INA110 106dB 10kHz 50ppm/ AD524 AD624 INA110 2N2222A INA110KP 2N2222A plastic instrumentation amplifier with offset adjust MPC800 AD624 INA110AG INA110BG RG113

    Untitled

    Abstract: No abstract text available
    Text: BPV21F Vishay Telefunken Silicon PIN Photodiode Description BPV21F is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters


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    PDF BPV21F BPV21F D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: BPV23NF Vishay Telefunken Silicon PIN Photodiode Description BPV23NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR


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    PDF BPV23NF BPV23NF D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK


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    PDF INA110 SBOS147A 106dB 10kHz 50ppm/ AD524 AD624 INA110

    BPV23F

    Abstract: BPV23FL
    Text: BPV23F L Vishay Telefunken Silicon PIN Photodiode Description BPV23F(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters (l p = 950 nm)


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    PDF BPV23F D-74025 16-Nov-99 BPV23FL

    BPV23NF

    Abstract: BPV23FL BPV23NFL
    Text: BPV23NF L Vishay Telefunken Silicon PIN Photodiode Description BPV23NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR


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    PDF BPV23NF D-74025 16-Nov-99 BPV23FL BPV23NFL

    Untitled

    Abstract: No abstract text available
    Text: HLXSR01632 512K x 32 Low Power Static RAM 1.5V Core VDD Features • ■ ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read Cycle Times Typical ≤20ns Worst case ≤ 25ns Write Cycle Times Typical ≤ 9ns Worst case ≤ 12ns


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    PDF HLXSR01632 1x10-12 5x10-12 150nm N40-1497-000-000

    IRIG B generator

    Abstract: No abstract text available
    Text: PCI Express Time Code Processor Model TSync-PCIe Shown with optional GPS+GLONASS receiver and OCXO • Low-Profile PCIe Form Factor • PCIe x1 Local Bus Operation • Zero Latency Time Reads • ±100ns Accuracy to Input • Auto-Detects and Prioritizes GPS


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    PDF 100ns 10MHz) IRIG B generator

    MTTF

    Abstract: No abstract text available
    Text: GaAs Schottky Diode Reliability Data HSCH-9XXX The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the product qualification, reliability


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    PDF MIL-STD-750. 5x10-12 1x10-6% 1x10-11 2x10-6% MIL-STD-750 DOD-HDBK-1686 MTTF

    HLXSR01632

    Abstract: No abstract text available
    Text: HLXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


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    PDF HLXSR01632 32-bit 150nm ADS-14217 HLXSR01632

    Untitled

    Abstract: No abstract text available
    Text: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK


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    PDF INA110 SBOS147A 106dB 10kHz 50ppm/ AD524 AD624 INA110

    AD524

    Abstract: AD624 INA110 INA110AG
    Text: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK


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    PDF INA110 SBOS147A 106dB 10kHz 50ppm/ AD524 AD624 INA110 AD624 INA110AG

    MV140-B

    Abstract: MV140 Morion mv140
    Text: PRECISION OCXO IN SMD PACKAGE MV140 Features: • · · · High frequency stability vs. temperature - up to ±5.0x10-9 Industry standard 25x22 mm SMD package Oven alarm & oscillator On/Off function Available as RoHS ±5x10-9 ±1x10-8 ±2x10-8 Availability of


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    PDF MV140 0x10-9 25x22 5x10-9 1x10-8 2x10-8 5x10-8 MV140 1x10-7/year 5x10-8/year MV140-B Morion mv140

    CO-08

    Abstract: MV145
    Text: MINIATURE DOUBLE OVEN ULTRA PRECISION OCXO MV145 Features: • Low Sensitivity to rapid changes of ambient temperature · Stability vs. temperature – up to +/- 2x10-10 · Short term stability – up to 5x10-12 per 1 sec · Aging – up to 2x10-8/year · Standard CO-08 package with size of 36x27x19 mm


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    PDF MV145 2x10-10 5x10-12 2x10-8/year CO-08 36x27x19 5x10-8/year 5x10-8 MV145

    Untitled

    Abstract: No abstract text available
    Text: ¡ f ì H A R R CA5470 I S S E M I C O N D U C T O R Quad Microprocessor BiMOS-E Operational Amplifiers with MOSFET Input/Bipolar Output March1993 Features Description • High Speed CMOS Input Stage Provides - Very High 2 1 . 5T Q 5x1012il Typ.


    OCR Scan
    PDF CA5470 5x1012il CA5470 CA5470)

    Untitled

    Abstract: No abstract text available
    Text: p P jp i G E C P L E S S E Y ADVANCE DATA SE MI CONDU CTORS DS3694-2.1 MA9564 HIGH TRANSIENT/RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9564 64k Static RAM is configured as 8192 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.Sjim technology. The device has been designed specifically for high


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    PDF DS3694-2 MA9564 MA9564 MC6364 7CL00 SCL00 9CL00 0023T01

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TLP666G TOSHIBA PHOTO COUPLER OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER SOLID STATE RELAY GaAs IRED & PHOTO-TRIAC TLP666G The TOSHIBA TLP666G consists of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting


    OCR Scan
    PDF TLP666G TLP666G 100mA UL1577, E67349 VDE0884/08 630VpK 6000VPK VDE0884

    Untitled

    Abstract: No abstract text available
    Text: BPV23FL y m m f _ ▼ Vishay Telefunken Silicon PIN Photodiode Description BPV23FL is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAIAs IR emit­


    OCR Scan
    PDF BPV23FL BPV23FL 20-May-99

    BS100D

    Abstract: bs100
    Text: SHARP E L E K / MELEC DIV 1SE D I Blue Sensitive Photodiode BS100D • 01 0 07 ^ 0 E I • ■ B S 100D Wide Wavelength Band Type Photodloîe^ Featu res Outline Dim ensions Unit : mm 1. Wide dynamic range (Capable of Ev = 10-3 ~ 104#x range measurament)


    OCR Scan
    PDF BS100D 55mm2 T-41-51 BS100D bs100

    transistor KJJ

    Abstract: C-1248 C1243 C1248 C1250 C2079 MCT210 Phototransistor with base emitter CI242 C1256
    Text: I5 Q PHOTOTRANSISTOR OPTOCOUPLER IPTOELEtTHIIICS MCT 210 DESCRIPTION PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.


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    PDF MCT210 MCT210 MCT210â E90700) C1256 transistor KJJ C-1248 C1243 C1248 C1250 C2079 Phototransistor with base emitter CI242 C1256