Untitled
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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40822
Abstract: N1056 2756 QS6U24 rg23
Text: SPICE PARAMETER QS6U24 by ROHM TR Div. * QS6U24 PMOSFET model * Date: 2006/09/26 * This model includes a diode between drain and source. *D G S .SUBCKT QS6U24 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1
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QS6U24
QS6U24
0000E-6
2572E-6
000E-3
0000E6
00E-12
456E-12
40822
N1056
2756
rg23
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Untitled
Abstract: No abstract text available
Text: QS6U24 QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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QS6U24
Abstract: No abstract text available
Text: QS6U24 Transistor Small switching −30V, −1A QS6U24 !External dimensions (Units : mm) TSMT6 2.8 1pin mark (3) (4) 2.9 (5) (1) 0.4 (2) (1)Anode (2)Source (3)Gate (4)Drain (5)N/C (6)Cathode (6) 1.6 0.85 0.16 !Features 1) The QS6U24 conbines Pch Treueh MOSFET with a
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QS6U24
QS6U24
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Untitled
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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Untitled
Abstract: No abstract text available
Text: QS6U24 Transistor Small switching −30V, −1A QS6U24 zFeatures 1) The QS6U24 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resisternce with a fast switching. 3) Pch Treueh MOSFET is neucted a low voltage drive
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QS6U24
QS6U24
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QS6U24
Abstract: No abstract text available
Text: QS6U24 Transistor Small switching −30V, −1A QS6U24 !External dimensions (Units : mm) TSMT6 2.8 1pin mark (3) (4) 2.9 (5) (1) 0.4 (2) (1)Anode (2)Source (3)Gate (4)Drain (5)N/C (6)Cathode (6) 1.6 0.85 0.16 !Features 1) The QS6U24 conbines Pch Treueh MOSFET with a
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QS6U24
QS6U24
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QS6U24
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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QS6U24
Abstract: TSMT6 QS6M4
Text: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 2.9 (6) (4) (3) (5) (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) The QS6U24 combines Pch Trench MOSFET with a Nch Trench MOSFET in a single TSMT6 package. 2) Pch Trench MOSFET and Nch Trench MOSFET
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QS6U24
TSMT6
QS6M4
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RSD130P10
Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨܼׅDŽ 01 MOSFET Contents
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RUM002N02
RZM002P02
RUE002N02
RZE002P02
RUM002N05
RUE002N05
RZF013P01
RZL025P01
RZR020P01
RW1A013ZP
RSD130P10
rsd220n06
RDR005N25
RP1E090
RSD130P
R6015
RCD040N25
rcd080n25
RSD050N10
R5207AND
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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RSD130P10
Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.
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5V/60V
R0039A
52P6214E
RSD130P10
RDR005N25
RCD040N25
rsd220n06
RSY200N05
RSD050N10
RCX100N25
R5207AND
RP1E090
rsy200
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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2sk3808
Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
Text: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts
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RSS140N03
O-220FN
2SK2095N
2SK2713
2SK2299N
2SK2793
2SK2792
2SK2740
/products/shortform/21trstr/trstr1
2sk3808
2SK3807
2sk3805
2sk3806
Shortform Transistor Guide
sp8m3
RSQ035P03
RTQ035P02
FET SP8M4
sp8m5
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BD9833
Abstract: BD9833KV QS6U24 equivalent FETDRV
Text: TECHNICAL NOTE Digital Still Camera / Digital Video Camera Regulator ICs System Switching Regulator ICs for Digital Video Cameras BD9833KV! zDescription BD9833KV 9-channel regulator provides a system that is suitable for use in digital video cameras. The device consists of: 5channels of DC/DC step-down controller, 2channels of DC/DC motor controller, 1channel of step-up
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BD9833KV!
BD9833KV
300-mA)
VQFP48C
BD9833
QS6U24 equivalent
FETDRV
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2sc5922
Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability
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200mW
500mW
15Min.
85Max.
15Max.
2sc5922
2SC5734
2SC5917
2SC5989
2SA2054
2sc5919
2SC5987
2SC5734K
2SC5918
2SC5982
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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RQW130N03
Abstract: rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130
Text: Product Catalog MOSFETs Discrete Semiconductors 2007-Dec. www.rohm.com ROHM MOSFETs In the society these days, MOSFET is getting rapidly popular as a key-device in many applications, such as mobile phones and automotive electronics. ROHM will keep developing new devices exactly following the
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2007-Dec.
50P5842E
RQW130N03
rqw200n03
sp8k10s
mosfet rqw 130
SP8K10
RQA200N03
mosfet rqa 130
RQW130
RQA130N03
RQW 130
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