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    transistor IRF 630

    Abstract: MTD10N08E ym 238
    Text: MOTOROLA SC X S T R S /R F IME D I fc>3fci7254 QEH04a3 1 MOTOROLA I Order this data sheet by MTD10N08E/D E3 SEMICONDUCTOR TECHNICAL DATA MTD10N08E Designer's Data Sheet TM OS IV Pow er Field Effect Transistor IM-Channel Enhancement-Mode D PA K for Surface Mount or Insertion Mount


    OCR Scan     		3fci7254 QEH04a3 MTD10N08E/D MTD10N08E CM262 transistor IRF 630 MTD10N08E ym 238 PDF