Infrared Phototransistor
Abstract: "infrared phototransistor" qed12x QED22X
Text: QSD122, QSD123, QSD124 Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. ■ Package Type: T-1 3/4 ■ Matched Emitter: QED12X/QED22X/QED23X
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QSD122,
QSD123,
QSD124
QED12X/QED22X/QED23X
QSD122/123/124
Infrared Phototransistor
"infrared phototransistor"
qed12x
QED22X
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qed12x
Abstract: No abstract text available
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
QED122
qed12x
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D880
Abstract: No abstract text available
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
QED122
D880
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qed12x
Abstract: QED121 QED122 QED123 QSD122
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
DS300336
qed12x
QED121
QED122
QED123
QSD122
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qed12x
Abstract: QSB34 ul217 QED121 QED123UL
Text: PLASTIC INFRARED LIGHT EMITTING DIODE QED123UL PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM SCHEMATIC 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) ANODE NOTES: 1. Dimensions for all drawings are in inches (mm).
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QED123UL
UL217
QSB34
qed12x
QSB34
QED121
QED123UL
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TIP 122 100 V
Abstract: TIP 122 transistor QED121 QED122 QED123 qsd122
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • != 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
100021B
TIP 122 100 V
TIP 122 transistor
QED121
QED122
QED123
qsd122
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QSD123/QSD124
Abstract: No abstract text available
Text: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN EMITTER COLLECTOR SCHEMATIC 0.500 (1.25) 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) NOTES:
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QSD122
QSD123
QSD124
QSD122/123/124
QED12X/QED22X/QED23X
DS300361
QSD123/QSD124
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QED121
Abstract: QED123 Fairchild 902 QED122
Text: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs
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QED121,
QED122,
QED123
880nm
QED122
QED123
QSD122/QSD123/QSD124
QED121
Fairchild 902
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QSD124
Abstract: QSD122 QSD123
Text: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN EMITTER COLLECTOR SCHEMATIC 0.500 (1.25) 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) NOTES:
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QSD122
QSD123
QSD124
QSD122/123/124
QED12X/QED22X/QED23X
DS300361
QSD124
QSD122
QSD123
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QSD128
Abstract: No abstract text available
Text: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD128 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.800 (20.3) MIN 0.305 (7.75) 0.040 (1.02) NOM COLLECTOR EMITTTER 0.050 (1.25) SCHEMATIC 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X)
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QSD128
QSD128
QED12X/QED22X/QED23X
DS300360
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Untitled
Abstract: No abstract text available
Text: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs
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QED121,
QED122,
QED123
880nm
QED122
QED123
QSD122/QSD123/QSD124
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L14LOI
Abstract: l14lti QSC11X H23LOI QSD12X QSD72X H23LOB
Text: MATCHED EMITTER/PHOTOSENSOR PAIRS Phototransistor/LED Pairs QPA1223 L14PX 96 F5DX (95) 20 mA/5V/.250” 7.5 - mA QPC1213 QSC11X (93) QEC12X (91) 20 mA/5V/.250” 5.0 - mA 30 QPD1223 QSD12X (93) QED12X (91) 20 mA/5V/.250” 10.0 - mA 30 QPD5223 QSD72X (93)
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QPA1223
QPC1213
QPD1223
QPD5223
QPE1113
H23A1
H23A2
L14PX
QSC11X
QSD12X
L14LOI
l14lti
QSC11X
H23LOI
QSD12X
QSD72X
H23LOB
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H23LOI
Abstract: H23LOB L14LOI
Text: EO OPTOELECTRONICS MATCHED EMITTER/PHOTOSENSOR PAIRS Sensor LED Test F a m ily F am ily C o n d itio n s p a g e # I p a g e #) Part Num ber B V ceo (V ) 'C(ON) i f/ v c e / d m in m ax un its m in Phototransistor/LED Pairs QPA1223 L14PX (96) F5DX (95)
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QPA1223
QPC1213
QPD1223
QPD5223
QPE1113
H23A1
H23A2
L14PX
QSC11X
QSD12X
H23LOI
H23LOB
L14LOI
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H23LOB
Abstract: No abstract text available
Text: OPTOELECTRONICS P a rt N u m b e r!2 MATCHED EMITTER/PHOTOSENSOR PAIRS Sensor F a m ily Test C o n d itio n s LED F a m ily B V ceo u n its V ) m in mA 30 lc (O N ) I f /V c e <D(1) m in m ax Phototransistor/LED Pairs QPA1223 L14PX F5DX 20 mA/5V/.250”
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QPA1223
QPC1213
QPD1223
QPD5223
QPE1113
H23A1
H23A2
L14PX
QSC11X
QSD12X
H23LOB
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