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    TIP 40c transistor

    Abstract: QEB123
    Text: TECHNOLOGIES Plastic T-% Pair QPB1213 PACKAGE DIMENSIONS J0 6 0 U J K 3 riSi 1 ,•60 [1 .M 3 J_ iSB l - . 5 9 0 U 4 .9 9 J 8 PLS .104 C 2 .M ] !&WT5.135 DIA NOTES* NOTES« 1. DIMENSIONS MC IN INCHES C m l 2. TOLERANCE IS ± M l Ä J LMLCSS DTfCBVJSC SPECFJEB.


    OCR Scan     		PDF QPB1213 QPB1213 QEB123) QSB113) PB1213 74bbfl51 TIP 40c transistor QEB123

    SEC TIP 127

    Abstract: QEA123
    Text: ÖUALITY TECHNOLOGIES CORP 3flE D Ei 74bfcjflSl 0003*^37 5 D ö T Y T - m - n INFRARED LIGHT EMITTING DIODES Characteristics at 25° C P ara­ m eter Emission A ngle a t Vi Power T est C ondi­ tions Peak W avelength A pertured R adiant Incidence If If = 20 m A


    OCR Scan     		PDF 74bfcjflSl QEA123 QEA223 QEB123 QEB223 QEC113 QEC123 QED123 QED223 QED233 SEC TIP 127