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    G50T60

    Abstract: G50T60, G50T60 igbt IGB50N60T IGP50N60T IGW50N60T igb50n60
    Text: IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :


    Original     		PDF IGP50N60T, IGB50N60T IGW50N60T P-TO-220-3-1 O-220AB) P-TO-247-3-1 O-220AC) P-TO-263-3-2 Dec-04 G50T60 G50T60, G50T60 igbt IGB50N60T IGP50N60T IGW50N60T igb50n60

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    G50T60

    Abstract: Q67040S4723 Q67040S4725
    Text: IGP50N60T IGW50N60T TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters


    Original     		PDF IGP50N60T IGW50N60T PG-TO-220-3-1 O-220AB) G50T60 Q67040S4723 Q67040S4725