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    Q67040S4714 Search Results

    Q67040S4714 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Q67040S4714 Infineon Technologies Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Original PDF

    Q67040S4714 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IKP04N60T

    Abstract: No abstract text available
    Text: IKP04N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKP04N60T Dec-04

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    IKP04N60T

    Abstract: Q67040S4714 diode 400V 4A ic 7818
    Text: IKP04N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original     		PDF IKP04N60T Dec-04 IKP04N60T Q67040S4714 diode 400V 4A ic 7818