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    k06t60

    Abstract: igbt k06t60 600V 300A igbt dc to dc power supply Q67040S4679 IKP06N60T IKB06N60T datasheet ic 7822 pspice high frequency igbt diode 400V 6A marking diode 6a
    Text: IKB06N60T IKP06N60T TrenchStop series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original     		PDF IKB06N60T IKP06N60T P-TO-220-3-1 O-220AB) Oct-04 k06t60 igbt k06t60 600V 300A igbt dc to dc power supply Q67040S4679 IKP06N60T IKB06N60T datasheet ic 7822 pspice high frequency igbt diode 400V 6A marking diode 6a

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    k06t60

    Abstract: igbt k06t60 IKP06N60T Q67040S4679
    Text: IKP06N60T p TrenchStop series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original     		PDF IKP06N60T PG-TO-220-3-1 O-220AB) k06t60 igbt k06t60 Q67040S4679