AN 22022
Abstract: No abstract text available
Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery
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SDT10S60
PG-TO220-2-2.
Q67040S4643
D10S60
AN 22022
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SDT10S60
Abstract: No abstract text available
Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery
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Original
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PDF
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SDT10S60
P-TO220-2-2.
D10S60
Q67040S4643
SDT10S60
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D10S60
Abstract: DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60
Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery
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Original
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PDF
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SDT10S60
PG-TO220-2-2.
D10S60
Q67040S4643
PG-TO-220-2-2
D10S60
DIODE 200A 600V schottky
PG-TO-220-2-2
Schottky diode TO220
SDT10S60
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D10S60
Abstract: pg-to220-2-2
Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery
|
Original
|
PDF
|
SDT10S60
PG-TO220-2-2.
Q67040S4643
D10S60
D10S60
pg-to220-2-2
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