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    Q0G17 Search Results

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    1N5499

    Abstract: IN5399 IN5394 IN5395 in5397 IN5393 Collmer Semiconductor 1N549 IN5392 IN5398
    Text: COLLMER SEMICONDUCTOR INC MfiE D • 2236712 Q0G17Ü3 DIT ■ COL 1*5 Amp Silicon Rectifiers -o\-\<z> IN 5391 THRU 1N5499 FEATURES • lo w co st • n ig n c u rre m c a p a D in ry • lo w le a K a g e • lo w ro r w a ra i v o lta q e d r o p a I D O -4 1


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    PDF Q001703 1N5499 DO-41 STD-202E 1N5499 IN5399 IN5394 IN5395 in5397 IN5393 Collmer Semiconductor 1N549 IN5392 IN5398

    ic a91

    Abstract: IR KBPC 106 lf 357 pin electrical specification
    Text: LITEHfl L_ r r i High Density Mounting Type Photocoupler LTK829/LTK849 T q t - 8 3 J LITE-ON INC 31E D I SS3b3b7 Q0G174b 1 ILTN • FEATURES 1. Symmetrical terminal configuration LTK829: 2-channel type LTK849: 4-channel type 2. High current transfer ratio


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    PDF LTK829/LTK849 LTK829: LTK849: E113898 QGG174b D0-41and D0-41L 201AD 553b3b7 D0201AD ic a91 IR KBPC 106 lf 357 pin electrical specification

    1S26

    Abstract: P4C116 P4C116L AD5e
    Text: PERFORMANCE SEMICONDUCTOR SDE V • 7 0 b 2 5 cl7 0001780 3äb * P S C P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12,15/20/25/35 ns (Commercial)


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    PDF P4C116/P4C116L 7Db25R7 P4C116L Technology11' 24-Pin P4C116/L P4C116L P4C116 Mil-Bul-103 -12PC 1S26 AD5e

    ba1s

    Abstract: C704DD7B DDG173D
    Text: T R I Q U I N T S E M I C O N D U C T O R , I N C TOSI GA9103 265MBaud Fibre Channel ENDEC Features The FC -265 GA9101, GA9102 and GA9103 provides a com prehensive electrical and physical interface fo r Fiber Channel. These chips are designed to operate at 265.625 Megabaud, one o f the operating speeds


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    PDF GA9103 FC-265 8b/10b 32-bit GA9101 GA9102 FC-265 GA9101, ba1s C704DD7B DDG173D

    cdvv

    Abstract: Dense pac
    Text: DENSE PAC 4 Megabit High Speed CMOS SRAM MICROSYSTEMS DPS256X16Cn3/DPS256X16Bn3 DESCRIPTION: The DPS256X16Cn3/DPS256X16Bn3 High Speed SRAM "ST A C K " modules are a revol utionarynew memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .


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    PDF DPS256X16Cn3/DPS256X16Bn3 DPS256X16Cn3/DPS256X16Bn3 50-pin DPS256X16Cn3/DPS256X16Bn3STACK 125-C -t-125 California92841-1428 30A097-34 00D174S cdvv Dense pac

    Marconi high power button capsule DCR1004

    Abstract: DCR1004 DCR1003SN1818 DCR1004SN1616 DCR1004SN0303 A1365 Marconi high power button capsule Scans-0012647 DCR1004S DCR1003
    Text: MARCONI 30E D CKT T E C H N O L O G Y • High Power Button Capsule Thyristor Tvpe Number Non-Repetitive Repetitive Peak Voltages Peak Voltages VoSM V rsm V drm V rrm f-Ag-Ai S7Ô3M4S OQQ174Ü 3 ■ DCR1003 Series DCR1004 Series IT AV = 1540A VRRM = 1700V


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    PDF DCR1003 DCR1004 DCR1003SN1818 DCR1004SN1818 DCR1003SN1717 DCR1004SN1717 DCR1003SN1616 DCR1004SN1616 DCR1003SN1515 DCR1004SN1515 Marconi high power button capsule DCR1004 DCR1004SN0303 A1365 Marconi high power button capsule Scans-0012647 DCR1004S