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    Allied Components International CHQ02-25NG-RC

    25nH +/-2% Ceramic Core Chip Ind
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CHQ02-25NG-RC Reel 1
    • 1 $0.98
    • 10 $0.98
    • 100 $0.85
    • 1000 $0.85
    • 10000 $0.85
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    Q0225 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F8212

    Abstract: E1307 F5020 F8050 equivalent F5022 f8432 f8050 E1203139 e2136 F5020 Transistor
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF G0706 F8212 E1307 F5020 F8050 equivalent F5022 f8432 f8050 E1203139 e2136 F5020 Transistor

    F8212

    Abstract: F8601 E1307 78K0R U19810EJ1V0UM00 E-032 E1204 F3415 V850E2V3 led message display projects f8432
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF U19810EJ1V0UM F8212 F8601 E1307 78K0R U19810EJ1V0UM00 E-032 E1204 F3415 V850E2V3 led message display projects f8432

    F8212

    Abstract: E1307 W8509 E2630 E2750 E2712 E2751 e2632 E2515 E2749
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF 78K0R U19810JJ1V0UM00 U19810JJ1V0UM F8212 E1307 W8509 E2630 E2750 E2712 E2751 e2632 E2515 E2749

    F8212

    Abstract: E1307 F8050 equivalent f2608 E2749 e2632 f8050 f6550 e2411 F5020 Transistor
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF G0706 F8212 E1307 F8050 equivalent f2608 E2749 e2632 f8050 f6550 e2411 F5020 Transistor

    Untitled

    Abstract: No abstract text available
    Text: SD3421/5421 Silicon PIN Photodiode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Fast response time • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to


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    PDF SD3421/5421 SE3450/5450, SE3455/5455 SE3470/5470 SD3421/5421 SD3421 SD5421 --I50

    Untitled

    Abstract: No abstract text available
    Text: M IT SU BISH I MICROCOM PUTERS M 37 7 10 S 4B F P 16-BIT CM OS M ICRO C O M PU TER DESCRIPTION The M37710S4BFP is a microcomputer designed with highperformance CM O S silicon gate technology. This is housed in a 80-pin plastic molded QFP. This microcomputer has a


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    PDF 16-BIT M37710S4BFP 80-pin 37710S4B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz


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    PDF TIM7179-16SL Q0225Bb 00225A7

    TP2020L

    Abstract: VP2020L BSS92 TP1220L TF1725
    Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number n>S on M a x (Q ) VGS(th) (V) I d (A ) TP1220L -120 20@ VGs = -4 .5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGs -1 to -2.4 -0.12 VP2020L -200 20@ Vg s = -4 .5 V


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    PDF tp1220l, tp/vp2020l, bss92 TP1220L TP2020L VP2020L BSS92 -100V O-226AA) S-52426â TF1725

    Untitled

    Abstract: No abstract text available
    Text: Temic TP1220L, TP/VP2020L, BSS92 Semiconductors P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) n>s(on) Max (Q) VGS(th) (V) Id (A) TP1220L -120 20 @ Vq S = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ Vqs - - 4 - 5 V


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    PDF TP1220L, TP/VP2020L, BSS92 TP1220L TP2020L VP2020L S-52426â 14-Apr-97 00EE570

    gg22

    Abstract: 20P5A DD22S
    Text: MITSUBISHI SOUND PROCESSOR ICs M 5 1 5 2 4 L /P /F P AUTO REVERSE PREAMPLIFIER WITH MUSIC SENSOR DESCRIPTION The M51524 is a preamplifier IC developed for car audio systems. The IC, in additions to 2 channels of high-gain, low-noise preamplifiers, has a lead-in


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    PDF M51524 b24Tfl2b 002253b M51524U/P/FP M51524P/FP) gg22 20P5A DD22S

    MB86605

    Abstract: No abstract text available
    Text: FUNCTIONS FUJITSU 3.1. BLOCK DIAGRAM - 16-Bit Bus Mode D15 to D7 to D8, DO, INT UDP LDP -W R SCSI Interface -RD -CSO -CS1 A4 to AO -BHE MODE1 MODEO t 0 I I I I fl I I I MPU Interface -MSG • -C /D -I/O -ATN ■ Internal Processor Various Registers Timer 32 bytes


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    PDF 16-Bit DMD15 -DB15 374175b Q022532 MB86605

    Untitled

    Abstract: No abstract text available
    Text: CS5180 AZ Modulator & 8 kHz to 400 kHz 16-Bit ADC Features Description • 16-Bit Delta-Sigm a A /D Converter CS5180 is a fully calibrated high-speed A L analog-todigital converter, capable of 400 kSamples/second out­ put word rate OWR . The OWR scales with the master


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    PDF CS5180 16-Bit CS5180 CS5180s DS259F1 213bb3R DG225bfl

    gs 069 0605

    Abstract: pw 2222 a mosfet vn10lm mosfet vn10 SILICONIX MARKING to237 vn10 52429 Siliconix vn10 VN10LE
    Text: T em ic VN10/0605/0610/2222 Series Se mi c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary P a rt N um ber V BR DSS M in (V) r DS(on) M a x (£2) V GS(th)(V ) I D M in (A ) VN10LE


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    PDF VN10/0605/0610/2222 VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM gs 069 0605 pw 2222 a mosfet vn10lm mosfet vn10 SILICONIX MARKING to237 vn10 52429 Siliconix vn10

    IPM1560

    Abstract: high side IGBT driver optocoupler
    Text: P D -9.1283 International S Rectifier PROVISIONAL IP M 1 56 0 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 2kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast“ IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes.


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    PDF 300VDC, 25kHz IPM1560 10-Timing 4A55M52 Q0225 high side IGBT driver optocoupler

    TIM7179-16SL

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz


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    PDF TIM7179-16SL D0225Ã TIM7179-16SL_ TIM7179-16SL

    AOI gate d flip flop

    Abstract: l4974 ekr 1000
    Text: 7^2=1237 r z ^ 7 7 □ 0 2 2 5 fiL4 H S C S -T H O M S O N # M @ [R m iO T « n @ S G S-THOMSON - r SB § _ 30E 1 3.1 L 4 9 7 5 » 5A SWITCHING REGULATOR A D VA N C E DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■


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    PDF 500KHz L4975 L4974. 330pF jjj30K L4374 50KHz L4970 AOI gate d flip flop l4974 ekr 1000