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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 1 N AMER PHILIPS/DISCRETE ObE D • ^53=131 0D1SDS1 >4 ■ MRB11175Y T - 3 3 - *T PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,	OCR Scan	PDF	MRB11175Y bb53T31 Q01S05M 7Z210t3

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: 1 N AMER PHILIPS/DISCRETE ObE D • ^53=131 0D1SDS1 >4 ■ MRB11175Y T - 3 3 - *T PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,

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MRB11175Y bb53T31 Q01S05M 7Z210t3