Q01322Ö Search Results

2SK1197

Abstract: No abstract text available
Text: LIE D 2 S K 1197 • 4 4 ^ 2 0 5 001325b 0T4 ■ H IT 4 H IT A C H I/ O P T O E L E C T R O N IC S SILICON N-CHANNEL ENHANCEMENT MOS FET rrrtT HIGH FREQUENCY AMPLIFIER ■ FEATURES • High Electro-static Destruction Voltage {C — 200 pF) — Gate to Source Voltage 500 V typ.