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    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/POQIER 27E D • bllSìSG Q00G532 1 « P T C T - 33-/3 TSB71020 I*TC TECHNOLOGY Power Transistor Chip, NPN 10 A, 200 V, tf = 35ns ■ Planar Epitaxial ■ C ontact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils


    OCR Scan     		PDF Q00G532 TSB71020

    B11-1960

    Abstract: D2425R 77b4
    Text: R IC HA RDS ON/ NATIONAL ELEK QEE Ï • 7734T17 0000554 fl ■ NAT j ^ SOLID-STATE RELAYS NATIONAL PART NO. Zero Cross switching Random switching D2410Z D2410R , I rms Current rating RMS Amps) D4810Z D2425Z D2425R 10 D4825Z D2440Z D2440R 25 D4840Z D2475Z


    OCR Scan     		PDF D2410Z D2410R D4810Z D2425Z D2425R D4825Z D2440Z D2440R D4840Z D2475Z B11-1960 77b4