Untitled
Abstract: No abstract text available
Text: 4MP20-6500/T500-P/P — Mini-Pack ◆ Features: • Ultra Low Profile Package • Weight Reduction of 72% on Standard Design • Volume Reduced by 72.5% on Standard Design • Exceptional Ultimate Stopband Performance • Designs from 6 to 18 GHz Available
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4MP20-6500/T500-P/P
4MP20-6500/T500-P/P
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PC133R-333-542-b2
Abstract: hys72v128320gr PC133R PC133R-333-542 VOLTAGE MO-161 PC133-333 34c02
Text: HYS 72Vxx3xxGR PC133 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules PC133 128 MByte Module PC133 256 MByte module PC133 512 MByte Module PC133 1 GByte Module PC133 2 GByte Module • 168-pin Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main
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72Vxx3xxGR
PC133
168-pin
72and
PC133R-333-542-b2
hys72v128320gr
PC133R
PC133R-333-542 VOLTAGE
MO-161
PC133-333
34c02
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transistor ph4n
Abstract: N/smd transistor ph4n
Text: SPEAr600 Embedded MPU with dual ARM926 core, flexible memory support, powerful connectivity features and programmable LCD interface Features • Dual ARM926EJ-S core up to 333 MHz: – Each with 16 Kbytes instruction cache + 16 Kbytes data cache ■ High performance 8-channel DMA
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SPEAr600
ARM926
ARM926EJ-S
8/16-bit
DDR1400
transistor ph4n
N/smd transistor ph4n
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Z685
Abstract: C3352 Z785 501Z k145 po 02 BE-211
Text: 9J7 JR^VR_ DVP^[ \U[`[ _RZ_[^ CVZR1a\ f=RN`a^R_ Yd8-/7W-1 0-1-z785~ z03/-*-~5V oqo 23~1 |2//~|725 287387 Yuz5-286 6~/~|7-21 {< -167z//z7-21 326-7-21 Sc33~z5z1|~b lV tV mV xV u t<3~T Ym-+,7 po Y fz5. po 6~/~|7z{/~ Yj-+, 63~~} 5~63216~ *5~48~1|< b \.j= Yv-}~ 5z1+~ 2* 32:~5 6285|~b _W\^ufe
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0-1-z785~
Yuz5-286
-167z//z7-21
9z5-286
5z00z
e21752//
Yf867
6-67z1|
g0-77
67z786
Z685
C3352
Z785
501Z
k145
po 02
BE-211
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V7270
Abstract: No abstract text available
Text: FQV72100 • FQV7290 • FQV7280 • FQV7270 • FQV7260 • FQV7250 • FQV7240 • FQV7230 FlexQ III 3.3 Volt Synchronous x 72 First-In/First-Out Queue Memory Configuration Part Number 65,536 x 72 32,768 x 72 16,384 x 72 8,192 x 72 4,096 x 72 2,048 x 72
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FQV72100
FQV7290
FQV7280
FQV7270
FQV7260
FQV7250
FQV7240
FQV7230
V7270
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L9D3256M72SBG2
Abstract: No abstract text available
Text: L9D3256M72SBG2 L9D3256M80SBG2 PRELIMINARY INFORMATION 18-20 Gb, DDR3, 256 M x 72/80 Integrated Module Benefits FEATURES DDR3 Integrated Module [iMOD]: x9DD 9DD4 99RU/2: 32: 59DD 9DD4 99 x9RU9FHQWHUWHUPLQDWHG push/pull output
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L9D3256M72SBG2
L9D3256M80SBG2
DDR3-1866
DDR3-1600
DDR3-1333
DR3-1333
R3-186
L9D3256M80SBG2x125
L9D3256M72SBG2
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D3256M72SBG2 L9D3256M80SBG2 18-20 Gb, DDR3, 256 M x 72/80 Integrated Module Benefits FEATURES DDR3 Integrated Module [iMOD]: x9DD 9DD4 99RU/2: 32: 59DD 9DD4 99 x9RU9FHQWHUWHUPLQDWHG push/pull output
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L9D3256M72SBG2
L9D3256M80SBG2
DDR3-1866
DDR3-1600
DR3-1333
DDR3-1333
R3-186
L9D3256M80SBG2x125
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084I
Abstract: No abstract text available
Text: DIN SOCKET METAL COVER TYPE C1 16 ~ t o jL S pecifications: 72 00 - ^ Insulation Resistance: 100 M n at 500V D.C. Dielectric Strength: 1000V A.C./1 Minute Contact Resistance: 2 0m n MAX. ARRANGEMENT OF -T t5 .q c r f t fid d Q i \ / * I/m liW \ iV V r */
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DS-076
DS-074
ADS-077
ADS-078
DS-087
ADS-088
084I
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Untitled
Abstract: No abstract text available
Text: 30,3 REF Q t y P er: TRAY CARTEL! 12 72 PART NUMBER ST A T EM E N T S F P P -3 1 3 0 -L N o. IN N E R / E U T E R D E S C R I P A T IO N 01 SFP 02 03 04 CO NNECTOR LIGHT P IP E S EMI TAB 8 CAGE N o n — L o q o I 7 LIGHT Q ’ty M A T E R IA L 1 2 2 2
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H/18/08'
313Q-L
PP-3130-L
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2SK2652
Abstract: No abstract text available
Text: S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : P o w e r M Q S F E T 2 S K 2 6 5 2 - 0 1 SPEC. No. F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE D RAW N NAME APPROVED Fuji Electric C 0 4 M CHECKED 72 Y 0257-R-004a
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2SK2652-01
0257-R-004a
2SK2652
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SFPP-3130-L
Abstract: No abstract text available
Text: 30, 3 R E F Qty Per: TRAY CARTDN IP PART 72 NUMBER STATPMPNT SPPP-3130-L No. INNER/EUTER D E S C R IP A T IO N 01 SFP 02 CAGE N on — Loqo LIG HT M A T E R IA L Q ’ty ECO T R IO CONNECTOR 2 HIGH TEMP/CDPPER ALLEY 03 L IG H T 2 P O LYC A RBO N ITE 04 EMI
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SPPP-3130-L
CSFPR-3130-L
tl/18/08'
CSFPR--313Q-L
SFPP-3130-L
SFPP-3130-L
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Untitled
Abstract: No abstract text available
Text: 6 3 ,2 5 R E F 8,0 R E F . 3,6 a ° OO o Oo O o o O’ o o a a OOo o ° o ° O° o b-c OD Y11,50 ^ |0 3 ,2 5 |A T 42,10 SIGNALS TYP — 51,63 Q ty P e r! TR A Y CARTON 12 72 STATPM PNT PA R T NUMBFR TDLERANCES EXCEPT AS NDTEI 01 02 03 D P S C R IR A T IO N
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SFPP-3133-L
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Untitled
Abstract: No abstract text available
Text: 3 3 .3 3 REF 30,3 R EF ER LIGHT RE PORTS 4 10 1 2 5 I A L SIGNALS TYP Q ty P e n TRAY C ARTEN 12 72 01 02 03 04 D E 5 C R IR A T IO N S F P CA G E N o n -L o g o C O NNECTOR LIGHT P IP E S EMI TAB ) ± O.S5 IN N ER LIG H T P IP E S S R P P -3 1 3 1 -L
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Untitled
Abstract: No abstract text available
Text: <3 0.5 0.5* /t5 /5 PITCH) o 00 l| A -S ^ JL TERMINAL ECT.Z-Z 0.5 (5) m w u y y o h (5 0 9 r e ) 0.5 P.C.BOARD PATTERN DIMENSION. (REF.) (MOUNTING AREA) h n 0.55 i l □ □ S A SHAPE OF 3 0 C IR C U I T S OR L E S S ) i f 3 NOTE (YfflAM MATERIAL A x7— m z z M M ,UL94V-0 (M)
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UL94V-0
UL94V-0,
0i/09/i9
SD-54722-0
MXJ-54
547220I0
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MwT-H22
Abstract: H273
Text: ni CR O U A V E T E C H N O L O G Y bbE i • b l B H l D D □ 0 D D 2 3 H T5T ■ HRUV MwT - H2 26 GHz High Power Pseudomorphic HEMT GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +23 DBM OUTPUT POWER AT 12 GHZ
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Untitled
Abstract: No abstract text available
Text: 7 DRAWING MADE 6 5 4 3 2 1 IN THIRD ANGLE PR O JEC TIO N THIS DRAWING IS UNPUBLISHED COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL MOD ,19 INTERNATIO NAL RIG H T5 LOC 1 RESERVED. D IS T BD REVISIONS 37 p F ZONE LTR D ES C R IPTIO N DATE
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Untitled
Abstract: No abstract text available
Text: Kontakl-Ha0e contact dimensions Langen der Steck- und AnschluBseit e gelt en fiir eingepreBte Steckverbinder (meting end terminetion length of confects epply to pressed in connectors) ^ Kontakt-Typ 00.2 p in type — K L M ABC N P Q R S I ca. Qj Qj c: T5
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D-32339
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Untitled
Abstract: No abstract text available
Text: Kontakt-HaBe contact dimensions Langen der Steck- und AnschluBseite ge11en fiir eingepreflte S te ckverb inder (mating and termination length of contacts apply to pressed in connectors) K ontakt-Typ — p in type R S T ABC Qj Qj c: T5 | T) CM CO Qj Q j Qj
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ge11en
76/xni
30/xin
27jLtm
50jiiin
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. M T58L512 L18P , M T 58L256L32P , M T 58L256 L36P ; M T 58L512V 18P , M T58L256 V 32P , M T 58L256 V 36P 8Mb SYNCBURST SRAM 3.3V Vdd, 3.3V or 2.5V I/O, Pipelined, Single-Cycle
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T58L512
58L256L32P
58L256
58L512V
T58L256
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Untitled
Abstract: No abstract text available
Text: M 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM IC R O N I TECHNOLOGY, INC. M T58L512 L18P , M T58L256 L32P , M T 58L256 L36P ; M T58L512 V 18P , M T58L256 V 32P , M T 5 8L256 V 36P 8Mb SYNCBURST SRAM 3.3V Vdd, 3.3V or 2.5V I/O, Pipelined, Single-Cycle
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T58L512
T58L256
58L256
8L256
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qs74fct521
Abstract: No abstract text available
Text: ÖUALITY SEMICON DUC TOR INC bSE D QSFCT521T, • 74bbô[]3 GQ01234 0=50 2521T High Speed CMOS 8-bit Identity Comparator Q Q S 54/74FC T521T Q S 54/74F C T2521T FEATURES/BENEFITS • Pin and function compatible to the 74F521 74FCT521 and 74FCT540T/1T • CMOS power levels: <7.5 mW static
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GQ01234
QSFCT521T,
2521T
54/74FC
T521T
54/74F
T2521T
74F521
74FCT521
74FCT540T/1T
qs74fct521
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trw 8040
Abstract: No abstract text available
Text: IBM11M16735B/C 16M X 72 DRAM MODULE Features • 1 6 8 Pin J E D E C S tandard, 8 Byte D ual In-line M em ory M odule - Buffered inputs except R A S, D ata • 1 6 M x 7 2 E xtended D a ta O u t M o d e D IM M s - R educed noise (3 2 V s s /V c c Pins) •
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IBM11M16735B/C
104ns
0QG2fl24
50H8040
trw 8040
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Untitled
Abstract: No abstract text available
Text: IBM11M4730C 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for ECC applications System Performance Benefits: • 4Mx72 Fast Page Mode DIMM - • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tcAC
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IBM11M4730C
4Mx72
110ns
130ns
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and pin diagram of IC 7476
Abstract: SRAM 256KB 6ns
Text: ADVANCE M I^ E 3 Q N I MT2LSYT3272C4, MT4LSYT6472C4 32K, 64K X 72 SYNCHRONOUS SRAM MODULE SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS, OUTPUTS AND BURST COUNTER FEATURES PIN ASSIGNMENT Top View 160-Lead, Dual Read-out DIMM
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MT2LSYT3272C4,
MT4LSYT6472C4
200ms
and pin diagram of IC 7476
SRAM 256KB 6ns
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