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Catalog Datasheet	MFG & Type	Document Tags	PDF
S5J14M Abstract: No abstract text available Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR S5J14M Silicon Diffused Type Unit in mm High Speed Rectifier Applications 10.3 MAX Features • Repetitive peak reverse voltage: V RRM = 600V • Average forward current: Ip <av = 20A • Low saturation voltage: t^ = 0.25ns Max.)	OCR Scan	S5J14M PW00080796 S5J14M	PDF

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S5J14M

Abstract: No abstract text available
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR S5J14M Silicon Diffused Type Unit in mm High Speed Rectifier Applications 10.3 MAX Features • Repetitive peak reverse voltage: V RRM = 600V • Average forward current: Ip <av = 20A • Low saturation voltage: t^ = 0.25ns Max.)

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S5J14M PW00080796 S5J14M

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