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    PW 2N 150 Search Results

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    PW 2N

    Abstract: 4392
    Text: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS on ≤ 30Ω FAST SWITCHING tON ≤ 15ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)


    Original     		PDF 2N/PN/SST4391 2N/PN/SST4391, OT-23 PW 2N 4392

    PW 2N

    Abstract: No abstract text available
    Text: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS on ≤ 30Ω FAST SWITCHING 2N SERIES tON ≤ 15ns ABSOLUTE MAXIMUM RATINGS PN SERIES TO-18 TOP VIEW 1 @ 25 °C (unless otherwise stated)


    Original     		PDF 2N/PN/SST4391 2N/PN/SST4391, 1800mW 350mW OT-23 LS/PN/SST4391 PW 2N

    Untitled

    Abstract: No abstract text available
    Text: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 rDS on ≤ 30 LOW ON RESISTANCE tON ≤ 15ns FAST SWITCHING ABSOLUTE MAXIMUM RATINGS 2N SERIES 1 PN SERIES SST SERIES SOT-23 TOP VIEW @ 25 °C (unless otherwise stated)


    Original     		PDF 2N/PN/SST4391 2N/PN/SST4391, OT-23 1800mW 350mW 25-year-old, LS/PN/SST4391

    PW 2N

    Abstract: 2N2894 2n320 2N3209
    Text: 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. Products approved to CECC 50004-022/023


    Original     		PDF 2N2894 2N3209 2N2894, 2N3209 PW 2N 2N2894 2n320

    Untitled

    Abstract: No abstract text available
    Text: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 rDS on ≤ 30Ω LOW ON RESISTANCE tON ≤ 15ns FAST SWITCHING ABSOLUTE MAXIMUM RATINGS 2N SERIES 1 PN SERIES SST SERIES SOT-23 TOP VIEW @ 25 °C (unless otherwise stated)


    Original     		PDF 2N/PN/SST4391 2N/PN/SST4391, OT-23 1800mW 350mW 25-year-old, LS/PN/SST4391

    Delay Lines

    Abstract: APP1_PAS analog delay line schematic passive delay line 125OC delay line Analog Delay Lines Characteristic impedance matching analog delay line
    Text: Passive Delay Line Design Considerations Operating Specifications - Passive Delays Pulse Overshoot Pos . 5% to 10%, typical Pulse Distortion (S) . 3% typical


    Original     		PDF 100VDC 100VDC 35/tr Delay Lines APP1_PAS analog delay line schematic passive delay line 125OC delay line Analog Delay Lines Characteristic impedance matching analog delay line

    2n5114

    Abstract: No abstract text available
    Text: 2N5114/5115/5116 Vishay Siliconix P-Channel JFETs PRODUCT SUMMARY Part Number v GS off (V) r DS(on) Max (Q ) 'o(otf) Typ (PA) toN Max(ns) 2N5114 5 to 10 75 -10 16 2N5115 3 to 6 100 -10 30 2N5116 1 to 4 150 -10 42 FEATURES BENEFITS APPLICATIONS • Low On-Resistance: 2N 5 1 1 4 <7 5 Q


    OCR Scan     		PDF 2N5114/5115/5116 2N5114 2N5115 2N5116 S-04030--Rev. 04-Jun-01

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    N2222A

    Abstract: PW 2N 218A n2222a2 2N2219A ip 2222A
    Text: S G S -T H O M S O N 2 N 2 2 1 8 A -2 N 2 2 1 9 A R fflD is œ iL iO ÏÏM iD g i 2 N 2 2 2 1 A -2 N 2 2 2 2 A HIGH SPEED SWITCHES D E S C R IP T IO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218A and 2N2219A and in Jedec


    OCR Scan     		PDF 2N2218A, 2N2219A, 2N2221A 2N2222A 2N2218A 2N2219A) 2N2222A) 2N2218A/2N2219A 2N2221A/2N2222A N2222A PW 2N 218A n2222a2 2N2219A ip 2222A

    S7504

    Abstract: S7503 S726 PWS-750-6 2N7010 4PIN Transform diode bridge 4pin 2n7012 diode 2U s7502
    Text: B U R R -B R O W N PWS750 ] E Isolated, Unregulated DC/DC CONVERTER COMPONENTS FEATURES APPLICATIONS • 100% TESTED FOR HIGH-VOLTAGE BREAKDOWN • INDUSTRIAL PROCESS CONTROL EQUIPMENT • COMPACT-SURFACE MOUNT • GROUND-LOOP ELIMINATION • MULTICHANNEL OPERATION


    OCR Scan     		PDF PWS750 PWS740/PWS745 750-2U 750-4U 750-3U 750-1U T07-14-3 S7504 S7503 S726 PWS-750-6 2N7010 4PIN Transform diode bridge 4pin 2n7012 diode 2U s7502

    2N3252

    Abstract: 4201P 2N3253
    Text: TYPES 2N3252, 2N3253 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 7 4 3 6 . M A R C H 1 9 6 5 - R E V IS E D M A R C H 1973 DESIGNED FOR HIGH-SPEED, HIGH-CURRENT SWITCHING APPLICATIONS m echanical d ata ab solu te m axim u m ratin g s a t 2 5 °C fre e -a ir tem p eratu re unless o therw ise noted


    OCR Scan     		PDF 2N3252, 2N3253 2N3252 4201P

    2N718

    Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
    Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for


    OCR Scan     		PDF 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, 2N150J. 2N1613. 2N718 SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613

    2n4033

    Abstract: No abstract text available
    Text: 30E D • 7^237 GQ312D7 fi ■ SGS-THOMSON ~T'37-l5 2N4030-2N4031 2N 4032-2N 4033 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030,2N4031, 2N4032, and 2N4033 are si­ licon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal,


    OCR Scan     		PDF GQ312D7 37-l5 2N4030-2N4031 4032-2N 2N4030 2N4031, 2N4032, 2N4033 2N4030 2N4032

    2N3012

    Abstract: NS2N 2N3012M 2N2894
    Text: TYPES 2N2894, P-N-P SILICON TRANSISTORS B U L L E T I N NO. D L -S 645051, A U G U S T 1964 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS 0.5 v Max at 100 ma Guaranteed VC f » a t High f T 400 Me Min * m e ch a n ic a l d a ta C ollecto r-Base V o l t a g e . — 12 v


    OCR Scan     		PDF 2N2894, 2N3012 NS2N 2N3012M 2N2894

    40664 SCR

    Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
    Text: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli­ cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.


    OCR Scan     		PDF -500B CR316 CR317 CR322 CR323 40664 SCR CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR

    2N5196

    Abstract: u421s
    Text: 2N5196 SERIES N-Channel JFET Pairs The 2N 5196 S e rie s of m onolithic J F E T p airs C T S iic o n ix in c o r p o ra te d is >G M AX V 9 ft M IN (m S ) (P A ) |Vg S 1"V GS2| M AX <mV) 2N 5196 -50 1 -1 5 5 2N 5197 -5 0 1 -1 5 5 2N 5198 -5 0 1 -1 5 10 2N 5199


    OCR Scan     		PDF 2N5196 u421s

    2N6678

    Abstract: transformerless inverter 2N6676 2N6677 DO820
    Text: Series 2N6676, 2N6677, 2N6678 High Voltage NPN Transistors 15 Amperes • 400 Volts FEA TURES • High Voltage Rating— 400 Volts • Glass Passivation • Superior Resistance to Thermal Fatigue • Industrial and Military Applications APPLICATIONS • Switching Regulators


    OCR Scan     		PDF 2N6676, 2N6677 2N6678 2N6677, 2N6678 transformerless inverter 2N6676 DO820

    2N5640 equivalent

    Abstract: 2N6638 2N5640 2N5638 2N5639 B67A 2N5638 equivalent FC4A 2N663
    Text: a S ilico n ix . designed for Performance Curves NC See Section 5 BENEFITS »ABSOLUTE M A X IM U M RATINGS 25°C Low Cost Industry Standard Package A utom atic Insertion Package Fast Switching l rise < 5 ns (2N5638) Low Insertion Loss RDS(on) < 30 SI (2N5638)


    OCR Scan     		PDF 2N6638) 2N5639) 2N5640) -10VDC 2N5640 equivalent 2N6638 2N5640 2N5638 2N5639 B67A 2N5638 equivalent FC4A 2N663

    104 cev

    Abstract: 2n3442 H1010 N3442 2n4347
    Text: 2 N 3442, 2 N 4347 NPN Power transistors 2 N 3442 and 2 N 4347 are sing le-diffu sed N P N silico n transistors in a case 3 A 2 DIN 4 1 872 T O -3 . The co llecto r is electrically connected to the case. The transistors are particularly designed for use at high operating voltages in A F output stages, as


    OCR Scan     		PDF Q62702-U59-F100 Q62901-B Q62702-U 38-F100 104 cev 2n3442 H1010 N3442 2n4347

    2N6350

    Abstract: No abstract text available
    Text: JAN, JAN, JAN, JAN, POWER DARLINGTONS 5 Amp, 150V, NPN JANTX JANTX JANTX JANTX & & & & JANTXV JANTXV JANTXV JANTXV 2N6350 2N6351 2N6352 2N6353 DESCRIPTION U n itro d e N P N D a riin g ton s co n sist of a two tra n sisto r c ir c u it on a sin gle m o n o lith ic plan ar ch ip. The 2N6350


    OCR Scan     		PDF 2N6350 2N6351 2N6352 2N6353 2N63S2 2N6350 2NS35I

    4392 ic equivalent

    Abstract: PW 2N SST4393 IN4392
    Text: T e m ic 2N/PN/SST4391 Series Siliconix N-Channel JFETs 2N4391 2N4392 2N4393 PN4391 PN4392 PN4393 SST4391 SST4392 SST4393 Product Summary r DS<on M a x £2) lD (oB >#P (pA) toN Typ (n s) - 4 to - 1 0 30 5 4 - 2 to - 5 60 5 4 -0 .5 to —3 100 5 4 P a rt N um ber


    OCR Scan     		PDF 2N/PN/SST4391 2N4391 2N4392 2N4393 PN4391 PN4392 PN4393 SST4391 SST4392 SST4393 4392 ic equivalent PW 2N SST4393 IN4392

    2N6518

    Abstract: 2N6520
    Text: SAMSUNG SEMI C ONDUCTOR INC 2N6518 14E D | 7^4142 00071^3 S | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISTOR T O -9 2 ABSOLUTE MAXIMUM RATINGS Ta=25°C f ; Characteristic Symbol Rating Unit -2 5 0 -2 5 0 -5 -5 0 0 -2 5 0 0 .6 25 5 150 —5 5 ~ 1 50


    OCR Scan     		PDF 2N6518 T-29-21 2N6520 10OfjAe -10mA, -20mA, -30mA, -50mA,

    PW 2N

    Abstract: SST4393 Q3060 marking 2n sot23 2N4392 4392 ic equivalent PW 2N 150 SST4391
    Text: Tem ic 2N/PN/SST4391 Series S e m i c o n d u c l o r s N-Channel JFETs 2N4391 2N4392 2N4393 PN4391 SST4391 PN4392 SST4392 PN4393 SST4393 Product Summary Part Number VGS off (V) r DS(on) Max (Q) iD(off) Typ (pA) to N T V p (n s) 2N/PN/SST4391 - 4 to -10 30


    OCR Scan     		PDF 2N/PN/SST4391 2N4391 2N4392 2N4393 2N/PN/SST4392 2N/PN/SST4393 PN4391 SST4391 PN4392 PW 2N SST4393 Q3060 marking 2n sot23 4392 ic equivalent PW 2N 150

    PW 2N

    Abstract: marking 2n sot23 2n4393 siliconix Q3060 SST4391 PN4392 equivalent
    Text: 2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY P a rt N u m b e r V û S o ff ( V ) r D S (o n) M a x ( Q ) ItH o ff) T Y P ( P A ) 2N/PN/SST4391 - 4 to -1 0 30 5 4


    OCR Scan     		PDF 2N/PN/SST4391 2N4391 2N4392 2N4393 2N/PN/SST4392 2N/PN/SST4393 PN4391 PN4392 PN4393 PW 2N marking 2n sot23 2n4393 siliconix Q3060 SST4391 PN4392 equivalent