PU4112
Abstract: PU4212 PUB4112 PUB4212
Text: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) Unit: mm 25.3±0.2 4.0±0.2 • Absolute Maximum Ratings TC = 25°C 0.5±0.15 1.0±0.25 0.5±0.15 2.54±0.2 9 x 2.54 = 22.86±0.25
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Text: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) Unit: mm 25.3±0.2 4.0±0.2 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat)
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PU4112
Abstract: PU4212 PUB4112 PUB4212
Text: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) M Di ain sc te on na tin nc ue e/ d Unit: mm 25.3±0.2 4.0±0.2 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat)
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PU4112)
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PU4212
Abstract: PUB4112 PUB4212 PU4112
Text: Power Transistor Arrays PUB4112 PU4112 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4212 (PU4212) Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 130
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PU4112)
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Abstract: No abstract text available
Text: Power Transistor Arrays PUB4112 PU4112 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4212 (PU4212) Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 130
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PU4112)
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PU4112
Abstract: PU4212 PUB4112 PUB4212
Text: Power Transistor Arrays PUB4112 PU4112 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4212 (PU4212) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
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Text: Power Transistor Arrays PUB4112 PU4112 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4212 (PU4212) Unit: mm 9.5±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat)
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Text: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) Unit: mm 25.3±0.2 4.0±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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