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Abstract: No abstract text available
Text: Power Transistor Arrays PUA3211 PU3211 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3111 (PU3111) Unit: mm 20.2±0.3 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open)
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PUA3211
PU3211)
PUA3111
PU3111)
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PU3111
Abstract: PU3211 PUA3111 PUA3211
Text: Power Transistor Arrays PUA3111 PU3111 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3211 (PU3211) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Rating
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PUA3111
PU3111)
PUA3211
PU3211)
PU3111
PU3211
PUA3111
PUA3211
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Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUA3111 PU3111 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3211 (PU3211) Unit: mm 8.0±0.2 4.0±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat)
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PUA3111
PU3111)
PUA3211
PU3211)
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Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUA3111 PU3111 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3211 (PU3211) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Rating
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PUA3111
PU3111)
PUA3211
PU3211)
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PU3211
Abstract: PU3111 PUA3111 PUA3211
Text: Power Transistor Arrays PUA3211 PU3211 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3111 (PU3111) Unit: mm 20.2±0.3 Solder Dip 5.3±0.5 4.4±0.5 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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PUA3211
PU3211)
PUA3111
PU3111)
PU3211
PU3111
PUA3111
PUA3211
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Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUA3211 PU3211 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3111 (PU3111) Unit: mm 20.2±0.3 Solder Dip 5.3±0.5 4.4±0.5 M Di ain sc te on na tin nc ue e/ d 9.5±0.2 1.65±0.2 • Low collector-emitter saturation voltage VCE(sat)
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PUA3211
PU3211)
PUA3111
PU3111)
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PU3111
Abstract: PU3211 PUA3111 PUA3211
Text: Power Transistor Arrays PUA3111 PU3111 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3211 (PU3211) Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
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PUA3111
PU3111)
PUA3211
PU3211)
PU3111
PU3211
PUA3111
PUA3211
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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