2SC3356
Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
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NE85633
2SC3356
NE85633-A
2SC3356
NE85633-T1B-A
2SC3356-T1B
R23/Q
R24/R
R25/S
PU10209EJ02V0DS
R25 2sc3356
marking r25 NPN
PU10209EJ02V0DS
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2SC3356-T1B-A
Abstract: 2SC3356 2SC3356 s2p 2SC3356-T1B
Text: PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
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2SC3356
R09DS0021EJ0300
2SC3356
2SC3356-T1B
2SC3356-A
2SC3356-T1B-A
2SC3356 s2p
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2SC3356 s2p
Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
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2SC3356
2SC3356-T1B
2SC3356 s2p
2SC3356 Application Note
2SC3356-T1B
2SC3356
R24 marking DATASHEET
TRANSISTOR 2sc3356
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2SC3356 s2p
Abstract: 2SC3356 Application Note 2SC3356 2SC3356-T1B
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC3356 s2p
Abstract: 2SC3356 2SC3356-A NE85633-T1B-A 2SC3356-T1B-A
Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85633 / 2SC3356 Data Sheet R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES
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NE85633
2SC3356
R09DS0021EJ0300
2SC3356
NE85633-T1B
2SC3356-T1B
NE85633-A
2SC3356-A
NE85633-T1B-A
2SC3356 s2p
2SC3356-T1B-A
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