Untitled
Abstract: No abstract text available
Text: HM53-208R0VLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 Element Composition CAS No Fe Resin Coating Lubricant Polyester
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HM53-208R0VLF
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Untitled
Abstract: No abstract text available
Text: HM53-001R6VLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 Element Composition CAS No Fe Resin Coating Lubricant Polyester
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HM53-001R6VLF
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Untitled
Abstract: No abstract text available
Text: HM53-101R6VLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 Element Composition CAS No Fe Resin Coating Lubricant Polyester
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HM53-101R6VLF
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Untitled
Abstract: No abstract text available
Text: HM53-60130HLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 4 ADHESIVE Epoxy Resin Element Composition CAS No Fe Resin Coating
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Original
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PDF
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HM53-60130HLF
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Untitled
Abstract: No abstract text available
Text: HM53-40360HLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 4 ADHESIVE Epoxy Resin Element Composition CAS No Fe Resin Coating
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Original
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PDF
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HM53-40360HLF
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Untitled
Abstract: No abstract text available
Text: HM53-50370HLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 4 ADHESIVE Epoxy Resin Element Composition CAS No Fe Resin Coating
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Original
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PDF
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HM53-50370HLF
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Untitled
Abstract: No abstract text available
Text: HM53-30150HLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 4 ADHESIVE Epoxy Resin Element Composition CAS No Fe Resin Coating
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HM53-30150HLF
0200hane
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A 673 C2 transistor
Abstract: RF POWER TRANSISTOR NPN vhf BLW30
Text: PH IL IP S INTERNATIONAL Philips Semiconductors_ LSE D m 711002b 00^31 0^ 3bl • PHIN _ Product specification VHF power transistor BLW30 QUICK REFERENCE DATA RF performance at Tr t = 25 °C in a common emitter test circuit.
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711002b
BLW30
OT120
-SOT12Q
MBA451
RA377
A 673 C2 transistor
RF POWER TRANSISTOR NPN vhf
BLW30
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mcd206
Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
Text: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead
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BLV13
OT123
PINNING-SOT123
MCD210
MBA451
MCD211
mcd206
philips Trimmer 60 pf
BLV13
MCD211
C106W
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SOT123 Package
Abstract: SOT123 BLF244 International Power Sources SOT-123
Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability
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PDF
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BLF244
711002b
OT123
7110fi5b
T-39-11
SOT123 Package
SOT123
BLF244
International Power Sources
SOT-123
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Transistor BLF244
Abstract: philips Trimmer 60 pf pu enamelled copper wire BLF244 capacitor 104 ceramic bje 133 resistor
Text: Philips Semiconductors bbSBIBl D D E ' m M ST7 M A P X Product specification VHF power MOS transistor BLF244 N FEATURES AMER P H IL IP S /D IS C R E T E b 'i E PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability
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PDF
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-SOT123
BLF244
7Z21784
Transistor BLF244
philips Trimmer 60 pf
pu enamelled copper wire
BLF244
capacitor 104 ceramic
bje 133 resistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability
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OCR Scan
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PDF
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Q02RR6Q
BLF246
OT121
UCA939
CA940
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Philips 2222 capacitor
Abstract: philips capacitor philips capacitor 2222
Text: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control
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PDF
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BLF177
OT121
Philips 2222 capacitor
philips capacitor
philips capacitor 2222
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transistor tt 2222
Abstract: TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package
Text: Philips Semiconductors Product specification HF power MOS transistor PHILIPS T -3 ^ -// INTERNATIONAL FEATURES 5bE D I 711002b DOMBbTM BLF145 437 IPHIN PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.
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PDF
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T-37-IÃ
BLF145
OT123
OT123
711002b
MBB072
4-J11
9-j14
5-j15
transistor tt 2222
TT 2222
enamelled copper wire tables
2222 123 capacitor philips
pu enamelled copper wire
TL 2222
4312 020 36640
ferroxcube wideband hf choke
22 nF, 63
SOT123 Package
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choke marking nb 03
Abstract: SOT121 Package BLF246
Text: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability
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PDF
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Q05TRÃ
BLF246
OT121
OT121
/CA93V
choke marking nb 03
SOT121 Package
BLF246
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization
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BLF221B
7110fl5b
paM37Sti
MRA910
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7z31
Abstract: Philips 809 08003 SOT123 Package sot123 PINNING-SOT123 BLF242 VHF transmitter circuit T-39-07
Text: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • Sb E 7 13 c! ' t0 7 ' BLF242 D • 711Dfl2fci 0 0 4 3 7 6 4 47T ■ P H I N PIN CONFIGURATION High power gain Low noise Easy power control
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PDF
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BLF242
711DA2b
OT123
PINNING-SOT123
7z31
Philips 809 08003
SOT123 Package
sot123
PINNING-SOT123
BLF242
VHF transmitter circuit
T-39-07
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marking code 7Gs
Abstract: 3 DG 1008 BLF147 71005 philips resistor 2322-153 SOT121 Package
Text: Product «pacification Philips Semiconductor» T -J ^ ~ /5 B L F 1 4 7 VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • 5bE D • 711Dfl2b 0DM3703 27T BIPHIN PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control
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-/5BLF147
0DM3703
OT121
BLF147
711005b
0DM3711
marking code 7Gs
3 DG 1008
BLF147
71005
philips resistor 2322-153
SOT121 Package
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors • I bbS3T31 DDS^flSS MTl M A P * Product specification BLF147 VHF power MOS transistor - AnER PHIi-lPS/]>ISCRETE FEATURES bTE J> PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability
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bbS3T31
BLF147
OT121
MCA124
bbS3T31
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MCA114
Abstract: BLF147 MCA122 71005 k 3531 transistor transistor K 3531
Text: Philips Semiconductors bbS 3 T 31 D0 ETÔ55 M T1 • A P y Product specification BLF147 VHF power MOS transistor ~ A t 1 E R PhiA-IPS/]>ISCRETE blE » PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control
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PDF
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bbS3T31
BLF147
OT121
BLF147
MCA114
MCA122
71005
k 3531 transistor
transistor K 3531
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Untitled
Abstract: No abstract text available
Text: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features
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D03TD32
BLV38
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Untitled
Abstract: No abstract text available
Text: N A HER PHILIPS/DISCRETE b^E bbS 3 ^ 3 ]. OOEflflO'l bEM H A P X D Philips Sem iconductors_ _ Product specification UHF power transistor FEATURES • Internal input matching, to achieve wide bandwidth • Ballasting resistors for optimum
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BLU15/12
MCB11E
bbS3R31
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MCD195
Abstract: UHF POWER TRANSISTOR UHF POWER BLT53 MCD201
Text: bTE T> N AUER P H I L I P S / D I S C R E T E bbS3^3]i GQ2Ö744 Ö4fl M A P X tjciiiiwudUUCIOrS _Product speciricauon UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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PDF
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GQ2A744
BLT53
OT122D
MCD199
MCD201
MCD195
UHF POWER TRANSISTOR
UHF POWER
BLT53
MCD201
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/MSCRETE b^E » • bbS 3131 0 0 2 ^ 1 1 0 'lb? « A P X BLV90 _ J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile
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BLV90
OT-172)
bb53R31
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