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    PTVA101K02EV Search Results

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    PTVA101K02EV Price and Stock

    MACOM PTVA101K02EV-V1-R0

    RF MOSFET LDMOS 50V H-36275-4
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    DigiKey PTVA101K02EV-V1-R0 Digi-Reel 94 1
    • 1 $823.83
    • 10 $781.214
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    PTVA101K02EV-V1-R0 Cut Tape 94 1
    • 1 $823.83
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    PTVA101K02EV-V1-R0 Reel 50 50
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    Mouser Electronics PTVA101K02EV-V1-R0
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    Richardson RFPD PTVA101K02EV-V1-R0 1
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    Infineon Technologies AG PTVA101K02EVV1XWSA1

    RF MOSFET LDMOS H-36275-4
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    DigiKey PTVA101K02EVV1XWSA1 Tray
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    MACOM PTVA101K02EV-V1-R250

    RF MOSFET
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    DigiKey PTVA101K02EV-V1-R250 Reel 250
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    Mouser Electronics PTVA101K02EV-V1-R250
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    Richardson RFPD PTVA101K02EV-V1-R250 1
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    Infineon Technologies AG PTVA101K02EV P1

    Transistor RF FET N-CH 105V 1030MHz to 1090MHz 4-Pin H-36275-4 Tray (Alt: SP001017752)
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    EBV Elektronik PTVA101K02EV P1 26 Weeks 1
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    Infineon Technologies AG LTN/PTVA101K02EV E8

    PTVA101K02EV Thermally Enhanced High Power RF LDMOS FET Evaluation Board (Alt: SP001108242)
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    EBV Elektronik LTN/PTVA101K02EV E8 26 Weeks 1
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    PTVA101K02EV Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTVA101K02EV-V1-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36275-4 Original PDF
    PTVA101K02EVV1R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36275-4 Original PDF
    PTVA101K02EV-V1-R250 Cree/Wolfspeed Uncategorized - Miscellaneous - RF DEVELOPMENT TOOLS Original PDF
    PTVA101K02EVV1R250XTMA1 Infineon Technologies Uncategorized - Miscellaneous - RF DEVELOPMENT TOOLS Original PDF
    PTVA101K02EVV1XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTVA101K02EV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PTVA101K02EV

    Abstract: 1030-1090MHz
    Text: Preliminary PTVA101K02EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band.


    Original     		PDF PTVA101K02EV PTVA101K02EV H-36275-4 1030-1090MHz

    RO6006

    Abstract: TRANSISTOR c105 capacitor 6800 uf r812 R809 PTVA101K02EV 011022 1030-1090MHz SK101M100ST
    Text: PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original     		PDF PTVA101K02EV PTVA101K02EV H-36275-4 RO6006 TRANSISTOR c105 capacitor 6800 uf r812 R809 011022 1030-1090MHz SK101M100ST

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PTVA101K02EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power ampliier applications in the 1030 MHz / 1090 MHz frequency band.


    Original     		PDF PTVA101K02EV PTVA101K02EV H-36275-4

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF