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    PTF191601E Search Results

    PTF191601E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTF191601E Infineon Technologies LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz Original PDF
    PTF191601E Infineon Technologies 1800 MHz to 2000 MHz; Package: PG:30260; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,930.0 - 1,990.0 MHz; P1dB (typ): 160.0 W; Supply Voltage: 28.0 V Original PDF

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    PTF191601E

    Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b
    Text: PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the


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    PDF PTF191601E PTF191601F PTF191601E PTF191601F 160-watt, PTF191601F* BCP56 LM7805 ATC 4r7 capacitor 100b

    PTF191601

    Abstract: PTF191601E
    Text: Advance Information PTF191601 LDMOS RF Power Field Effect Transistor 160 W, 1930 – 1990 MHz Description Features The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


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    PDF PTF191601 PTF191601 PTF191601E