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    Catalog Datasheet MFG & Type Document Tags PDF

    Q67100-Q1104

    Abstract: Q67100-Q1105 Q67100-Q1106
    Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time


    Original
    HYB5117805BSJ HYB5117805BSJ-50/-60/-70 P-SOJ-28-3 400mil) 81max GPJ05699 Q67100-Q1104 Q67100-Q1105 Q67100-Q1106 PDF

    21x21

    Abstract: MM554 tray bga 45x45 bga X13769XJ2V0CD00 CPGA132 LA010 P14DH-100-300A2-1
    Text: 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. [検索]のダイアログ・ボックスが表示されます。 3. 検索したいパッケージのNECコードを入力して, 検索 F をクリックしてください。


    Original
    P22C100300A1 P8C-100-300B P8CT-100-300B2-1 P8C-100-300A-1 P-DIP8-0300-2 MD300-2A MD300-1A MD300-09A 21x21 MM554 tray bga 45x45 bga X13769XJ2V0CD00 CPGA132 LA010 P14DH-100-300A2-1 PDF

    Q67100-Q1147

    Abstract: Q67100-Q1148 WL10
    Text: 2M x 8-Bit Dynamic RAM HYB3117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address


    Original
    HYB3117800BSJ-50/-60/-70 3117800BSJ-50/-60/-70 P-SOJ-28-3 81max GPJ05699 Q67100-Q1147 Q67100-Q1148 WL10 PDF

    WL4 550

    Abstract: Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 SOJ-28
    Text: 2M x 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • • • • • • • • • • • 2 097 152 words by 8-bit organization 0 to 70 ˚C operating temperature Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC


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    5117800BSJ-50/-60/-70 GPJ05699 P-SOJ-28-3 WL4 550 Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 SOJ-28 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2 M X 8-Bit Dynamic RAM 2 k-refresh HYB 5117800AJ-50/-60/-70/-80 Prelim inary Inform ation • • • • • • • • • • • • 2097152 words by 8-bit organization 0 to 70 'C operating temperature Fast access and cycle time RAS access time:


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    5117800AJ-50/-60/-70/-80 235b05 PDF

    Q907

    Abstract: Q67100-Q915 Q554b
    Text: SIEM ENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:


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    5117400AJ-50/-60/-70/-80 5117400ASJ-50/-60/-70/-80 235b05 D0SSH72 Q907 Q67100-Q915 Q554b PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM EN S 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: •


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    5117800/BSJ-50/-60 3117800BSJ-50/-60 HYB5117800 HYB3117800 117800/BSJ-50/-60 P-SOJ-28-3 400mil) PDF

    M621100

    Abstract: 621-100
    Text: Æ T S G S -1H 0 M S 0 N M621100 VERY FAST CMOS 1 Megabit 1M x 1 SRAM • 1 Megabit CMOS FAST SRAM ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17,20, 25ns ■ LOW Vcc DATA RETENTION: 2V ■ SEPARATE DATA INPUT AND OUTPUT ■ JEDEC PLASTIC SOJ, 400 mil PACKAGE


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    M621100 M621100 PSOJ28 621-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70


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    P-SOJ-26/20-5 PDF

    thv8

    Abstract: HYB39S16800T 16m x 4 hyb
    Text: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15


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    L-SIM-72-12 324020S/GS 324025S/GS L-SIM-72-15 328020S/GS 328025S/GS 364020S/GS L-SIM-72-13 364035S/GS thv8 HYB39S16800T 16m x 4 hyb PDF

    SMD MARKING CODE 2M

    Abstract: No abstract text available
    Text: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC


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    5117805BSJ 5117805BSJ-5Q/-60/-70 5117805BSJ-50/-60/-70 86maxl -251Al SMD MARKING CODE 2M PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M X 4-Bit D yn am ic RAM H YB 5116400J-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 v e rs io n )


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    5116400J-50/-60/-70/-80 soj-28/24 23SLG5 P-SOJ-28/24 23SLDS PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Inform ation • • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)


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    5117800BSJ-50/-60/-70 fiE35LD5 PDF

    MK48S80

    Abstract: No abstract text available
    Text: rz 7 SGS-THOMSON i L IO T 0 K S s M K48S80 VERY FAST CMOS 8K x 8 CACHE TAGRAM • 8K x 8 CMOS SRAM WITH ON BOARD COMPARATOR ■ ADDRESS TO COMPARE ACCESS TIME: 15,17, 20,25ns ■ FAST CHIP SELECT COMPARE ACCESS : 8ns ■ MATCH OUTPUT WITH FAST TAG DATA TO


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    K48S80 PSOJ28 PSDIP28 MK48S80 MK48S80 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70


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    1000BJ-50 1000BJ-60 1000BJ-70 1000BJL-50 1000BJL-60 1000BJL-70 514256B-50 514256B-60 514256B-70 514256BJ-50 PDF

    5117400

    Abstract: sem 2500 7212 tube
    Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1


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    P-SOJ-26/20-1 J-26/20-5? P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-26/24-1 1000BJ 514256BJ 514100BJ 514400BJ 5117400 sem 2500 7212 tube PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM EN S 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:


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    5117805/BSJ-50/-60 3117805/BSJ-50/-60 117805/BSJ-50/-60 P-SOJ-28-3 400mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: AC lCAC RAS access time -50 -60 -70 50 60 70 ns CAS access time 13 15


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    5117800BSJ-50/-60/-70 P-SOJ-28-3 0235bD5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 512 K x 8-Bit Dynamic RAM Low Power 512 K x 8-Bit Dynamic RAM HYB 514800BJ-60/-70/-80 HYB 514800BJL-60/-70/-80 Advanced Information • 512 288 words by 8-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time RAS access time:


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    514800BJ-60/-70/-80 514800BJL-60/-70/-80 514800BJ/BJL-60/-70/-80 PDF

    514400

    Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
    Text: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1


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    P-SOJ-26/20-11 P-SOJ-26/20-52' P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-28/24-1 5116400J 5117400ASJ 5116400ASJ 5116400AJ 514400 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000 PDF

    MS28008

    Abstract: QV-11 65536-BIT
    Text: SGS-THOMSON M628008 * 7 1 iflD gi(Q [lLi TrK(Q)MD©i VERY FAST CMOS 8K x 8 SRAM WITH OUTPUT ENABLE • 8K x 8 CM OS FAST SRAM W ITH OUTPUT ENABLE ■ EQUAL C YC LE AND ACCESS TIM ES: 10, 1 2 ,1 5 , 20ns ■ TRI-STATE COM M O N I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mils PACK­


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    M628008 MS28008 M628008 PSDIP28 PSOJ28 MS28008 QV-11 65536-BIT PDF

    256x16 eprom

    Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
    Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1


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    ET9400 EF6801/04/05 ISB12000 ISB18000 MKI48Z18 PHDIP28 MK48Z30, 256x16 eprom GS-2I5-D12 GS-D250M GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B PDF

    M628008

    Abstract: 4A92
    Text: n Z J SGS-THOMSON ^ 7# [» ^©itLigTTGMOigS M628008 VERY FAST CMOS 8K x 8 SRAM WITH OUTPUT ENABLE • 8K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 10, 12,15, 20ns ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mils PACK­


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    M628008 M628008 PSDIP28 PSOJ28 4A92 PDF

    48S74

    Abstract: No abstract text available
    Text: rz7 SGS-THOMSON ^ 7 M IL iC T i® « S If M K 48S74 VERY FAST CMOS 8K x 8 CACHE TAGRAM • 8K x 8 CMOS SRAM WITH ONBOARD COMPARATOR ■ ADDRESS TO COMPARE ACCESS TIME: 20, 25, 35ns - FAST CHIP SELECT COMPARE ACCESS 10ns ■ MATCH OUTPUT WITH FAST TAG DATA TO


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    48S74 MK48S74 MK48S74 PSDIP28 PSOJ28 48S74 PDF