Q67100-Q1104
Abstract: Q67100-Q1105 Q67100-Q1106
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
PDF
|
HYB5117805BSJ
HYB5117805BSJ-50/-60/-70
P-SOJ-28-3
400mil)
81max
GPJ05699
Q67100-Q1104
Q67100-Q1105
Q67100-Q1106
|
21x21
Abstract: MM554 tray bga 45x45 bga X13769XJ2V0CD00 CPGA132 LA010 P14DH-100-300A2-1
Text: 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］のダイアログ・ボックスが表示されます。 3. 検索したいパッケージのNECコードを入力して， 検索 F をクリックしてください。
|
Original
|
PDF
|
P22C100300A1
P8C-100-300B
P8CT-100-300B2-1
P8C-100-300A-1
P-DIP8-0300-2
MD300-2A
MD300-1A
MD300-09A
21x21
MM554
tray bga
45x45 bga
X13769XJ2V0CD00
CPGA132
LA010
P14DH-100-300A2-1
|
Q67100-Q1147
Abstract: Q67100-Q1148 WL10
Text: 2M x 8-Bit Dynamic RAM HYB3117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address
|
Original
|
PDF
|
HYB3117800BSJ-50/-60/-70
3117800BSJ-50/-60/-70
P-SOJ-28-3
81max
GPJ05699
Q67100-Q1147
Q67100-Q1148
WL10
|
WL4 550
Abstract: Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 SOJ-28
Text: 2M x 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • • • • • • • • • • • 2 097 152 words by 8-bit organization 0 to 70 ˚C operating temperature Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC
|
Original
|
PDF
|
5117800BSJ-50/-60/-70
GPJ05699
P-SOJ-28-3
WL4 550
Q67100-Q1092
Q67100-Q1093
Q67100-Q1094
SOJ-28
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 2 M X 8-Bit Dynamic RAM 2 k-refresh HYB 5117800AJ-50/-60/-70/-80 Prelim inary Inform ation • • • • • • • • • • • • 2097152 words by 8-bit organization 0 to 70 'C operating temperature Fast access and cycle time RAS access time:
|
OCR Scan
|
PDF
|
5117800AJ-50/-60/-70/-80
235b05
|
Q907
Abstract: Q67100-Q915 Q554b
Text: SIEM ENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:
|
OCR Scan
|
PDF
|
5117400AJ-50/-60/-70/-80
5117400ASJ-50/-60/-70/-80
235b05
D0SSH72
Q907
Q67100-Q915
Q554b
|
Untitled
Abstract: No abstract text available
Text: SIEM EN S 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: •
|
OCR Scan
|
PDF
|
5117800/BSJ-50/-60
3117800BSJ-50/-60
HYB5117800
HYB3117800
117800/BSJ-50/-60
P-SOJ-28-3
400mil)
|
M621100
Abstract: 621-100
Text: Æ T S G S -1H 0 M S 0 N M621100 VERY FAST CMOS 1 Megabit 1M x 1 SRAM • 1 Megabit CMOS FAST SRAM ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17,20, 25ns ■ LOW Vcc DATA RETENTION: 2V ■ SEPARATE DATA INPUT AND OUTPUT ■ JEDEC PLASTIC SOJ, 400 mil PACKAGE
|
OCR Scan
|
PDF
|
M621100
M621100
PSOJ28
621-100
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70
|
OCR Scan
|
PDF
|
P-SOJ-26/20-5
|
thv8
Abstract: HYB39S16800T 16m x 4 hyb
Text: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15
|
OCR Scan
|
PDF
|
L-SIM-72-12
324020S/GS
324025S/GS
L-SIM-72-15
328020S/GS
328025S/GS
364020S/GS
L-SIM-72-13
364035S/GS
thv8
HYB39S16800T
16m x 4 hyb
|
SMD MARKING CODE 2M
Abstract: No abstract text available
Text: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC
|
OCR Scan
|
PDF
|
5117805BSJ
5117805BSJ-5Q/-60/-70
5117805BSJ-50/-60/-70
86maxl
-251Al
SMD MARKING CODE 2M
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit D yn am ic RAM H YB 5116400J-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 v e rs io n )
|
OCR Scan
|
PDF
|
5116400J-50/-60/-70/-80
soj-28/24
23SLG5
P-SOJ-28/24
23SLDS
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Inform ation • • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)
|
OCR Scan
|
PDF
|
5117800BSJ-50/-60/-70
fiE35LD5
|
MK48S80
Abstract: No abstract text available
Text: rz 7 SGS-THOMSON i L IO T 0 K S s M K48S80 VERY FAST CMOS 8K x 8 CACHE TAGRAM • 8K x 8 CMOS SRAM WITH ON BOARD COMPARATOR ■ ADDRESS TO COMPARE ACCESS TIME: 15,17, 20,25ns ■ FAST CHIP SELECT COMPARE ACCESS : 8ns ■ MATCH OUTPUT WITH FAST TAG DATA TO
|
OCR Scan
|
PDF
|
K48S80
PSOJ28
PSDIP28
MK48S80
MK48S80
|
|
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
|
OCR Scan
|
PDF
|
1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
|
5117400
Abstract: sem 2500 7212 tube
Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1
|
OCR Scan
|
PDF
|
P-SOJ-26/20-1
J-26/20-5?
P-SOJ-28-2
P-SOJ-40-1
P-TSOPII-26/20-1
P-SOJ-26/24-1
1000BJ
514256BJ
514100BJ
514400BJ
5117400
sem 2500
7212 tube
|
Untitled
Abstract: No abstract text available
Text: SIEM EN S 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
|
OCR Scan
|
PDF
|
5117805/BSJ-50/-60
3117805/BSJ-50/-60
117805/BSJ-50/-60
P-SOJ-28-3
400mil)
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: AC lCAC RAS access time -50 -60 -70 50 60 70 ns CAS access time 13 15
|
OCR Scan
|
PDF
|
5117800BSJ-50/-60/-70
P-SOJ-28-3
0235bD5
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 512 K x 8-Bit Dynamic RAM Low Power 512 K x 8-Bit Dynamic RAM HYB 514800BJ-60/-70/-80 HYB 514800BJL-60/-70/-80 Advanced Information • 512 288 words by 8-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time RAS access time:
|
OCR Scan
|
PDF
|
514800BJ-60/-70/-80
514800BJL-60/-70/-80
514800BJ/BJL-60/-70/-80
|
514400
Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Text: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1
|
OCR Scan
|
PDF
|
P-SOJ-26/20-11
P-SOJ-26/20-52'
P-SOJ-28-2
P-SOJ-40-1
P-TSOPII-26/20-1
P-SOJ-28/24-1
5116400J
5117400ASJ
5116400ASJ
5116400AJ
514400
511000 dram
ON SEMICONDUCTOR 241
bt 2411
514256
511000
|
MS28008
Abstract: QV-11 65536-BIT
Text: SGS-THOMSON M628008 * 7 1 iflD gi(Q [lLi TrK(Q)MD©i VERY FAST CMOS 8K x 8 SRAM WITH OUTPUT ENABLE • 8K x 8 CM OS FAST SRAM W ITH OUTPUT ENABLE ■ EQUAL C YC LE AND ACCESS TIM ES: 10, 1 2 ,1 5 , 20ns ■ TRI-STATE COM M O N I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mils PACK
|
OCR Scan
|
PDF
|
M628008
MS28008
M628008
PSDIP28
PSOJ28
MS28008
QV-11
65536-BIT
|
256x16 eprom
Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1
|
OCR Scan
|
PDF
|
ET9400
EF6801/04/05
ISB12000
ISB18000
MKI48Z18
PHDIP28
MK48Z30,
256x16 eprom
GS-2I5-D12
GS-D250M
GS-2I12-9
512X8 from 128x8 ram
L293D shield
gs-2i5
PHDIP24
ESM1602B
|
M628008
Abstract: 4A92
Text: n Z J SGS-THOMSON ^ 7# [» ^©itLigTTGMOigS M628008 VERY FAST CMOS 8K x 8 SRAM WITH OUTPUT ENABLE • 8K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 10, 12,15, 20ns ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mils PACK
|
OCR Scan
|
PDF
|
M628008
M628008
PSDIP28
PSOJ28
4A92
|
48S74
Abstract: No abstract text available
Text: rz7 SGS-THOMSON ^ 7 M IL iC T i® « S If M K 48S74 VERY FAST CMOS 8K x 8 CACHE TAGRAM • 8K x 8 CMOS SRAM WITH ONBOARD COMPARATOR ■ ADDRESS TO COMPARE ACCESS TIME: 20, 25, 35ns - FAST CHIP SELECT COMPARE ACCESS 10ns ■ MATCH OUTPUT WITH FAST TAG DATA TO
|
OCR Scan
|
PDF
|
48S74
MK48S74
MK48S74
PSDIP28
PSOJ28
48S74
|