18f2580
Abstract: PIC18F2480 PIC18XXX8 PIC18FX480 HD 4480 PIC18F4480 application example code PIC18F2580 PIC18F4480 PIC18F4580 E11H
Text: PIC18F2480/2580/4480/4580 Data Sheet 28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology 2007 Microchip Technology Inc. Preliminary DS39637C Note the following details of the code protection feature on Microchip devices:
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PIC18F2480/2580/4480/4580
28/40/44-Pin
10-Bit
DS39637C
DS39637C-page
18f2580
PIC18F2480
PIC18XXX8
PIC18FX480
HD 4480
PIC18F4480 application example code
PIC18F2580
PIC18F4480
PIC18F4580
E11H
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Y51 h 85c
Abstract: 7377 y133 Y134 Y107 Y228 DI01 KS0606 Y239 transistor+Bc+542
Text: 240CH SOURCE DRIVER FOR TFT LCD KS0606 INTRODUCTION KS0606 is 240 output liquid crystal display LCD source driver. It is used in the liquid crystal display panel for pocket sized TV, CNS etc. After sampling and holding at the SAMPLE-HOLD circuit at the clock synchronized timing, the R,G,B, 3CH. video
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240CH
KS0606
KS0606
Y1Y240Y240Y1)
Y51 h 85c
7377
y133
Y134
Y107
Y228
DI01
Y239
transistor+Bc+542
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Y51 h 85c
Abstract: 4560 opamp 7377 y133 KS0606 Y176 CTR CAPACITOR DATASHEET Y152 Y228 Y239
Text: 240CH SOURCE DRIVER FOR TFT LCD KS0606 INTRODUCTION KS0606 is 240 output liquid crystal display LCD source driver. It is used in the liquid crystal display panel for pocket sized TV, CNS etc. After sampling and holding at the SAMPLE-HOLD circuit at the clock synchronized timing, the R,G,B, 3CH. video
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240CH
KS0606
KS0606
Y1Y240Y240Y1)
Y51 h 85c
4560 opamp
7377
y133
Y176
CTR CAPACITOR DATASHEET
Y152
Y228
Y239
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HMP45
Abstract: DDR2-667 DDR2-800 HMP451S6MMP8C h5ps4g83mmp DDR2 hynix
Text: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A This Hynix unbuffered Small Outline Dual In-Line Memory Module DIMM series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 2Gb version A based
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200pin
1200pin
HMP45
DDR2-667
DDR2-800
HMP451S6MMP8C
h5ps4g83mmp
DDR2 hynix
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CD 5888
Abstract: Virtual Keyboard
Text: STPC Linux Xfree86 server Installation Guide Issue 1.0 August 30, 2000 STMicroelectronics 1/10 Information provided is believed to be accurate and reliable. However, ST Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringements of patents or other
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Xfree86
CD 5888
Virtual Keyboard
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HP8133
Abstract: SY89296L Tektronix 464 11801a SY89295L 9740 ECJ-0EF1C104Z ERJ-2RKF1002X
Text: 2.5V/3.3V 2.5GHz PROGRAMMABLE DELAY CHIP FEATURES Precision Edge SY89295L/296L EVALUATION BOARD DESCRIPTION • ■ ■ ■ ■ ■ ■ Maximum frequency > 2.5GHz Programmable range: 2.2ns to 12.43ns 10ps delay increments Low voltage 2.5/3.3V power supply operation
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SY89295L/296L
32-pin
SY89295L
SY89296L
SY89295L/296L
HP8133
Tektronix 464
11801a
9740
ECJ-0EF1C104Z
ERJ-2RKF1002X
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A0200-4
Abstract: ECH8602R
Text: ECH8602R Ordering number : ENA0200 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8602R General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 2.5V drive. Best suited for LiB charging and discharging switch.
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ECH8602R
ENA0200
900mm20
A0200-4/4
A0200-4
ECH8602R
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1754
Abstract: PI6C3991 PI6C39911 71713 39911-5
Text: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 05-12-R* Means of Distinguishing Changed Devices: Date Issued: June 10, 2005 (Revised date June 24, 2005) Product(s) Affected: PI6C3991, 3991I, 3991-2, 3991-5, 3991-5I;
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05-12-R*
PI6C3991,
3991I,
3991-5I;
PI6C39911,
PI6C39911-
1754
PI6C3991
PI6C39911
71713
39911-5
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PAR/2900K
Abstract: No abstract text available
Text: DATA SHEET CLL042-1218A5-273M1A2 DATA SHEET 1/11 1. Scope of Application This data sheet is applied to the LED package, model CLL042-1218A5-273M1A2. 2. Part code CLL 042 - 12 18 A5 - 27 3 M1 A2 [1] [2] [3] [4] [5] [6] [1] Part Code [2] Dies in series quantity
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CLL042-1218A5-273M1A2
CLL042-1218A5-273M1A2.
2700K
80min.
PAR/2900K
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K4H510438D-ZCB3
Abstract: K4H510438DZCCC tsop-ii 66PIN JEDEC TRAY "Material Declaration Sheet" tsop-ii 66 JEDEC TRAY k4h511638d
Text: K4H510438D K4H510838D K4H511638D DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4H510438D
K4H510838D
K4H511638D
512Mb
430KB
438KB
204KB
DDR266/333,
66TSOP2)
430KB
K4H510438D-ZCB3
K4H510438DZCCC
tsop-ii 66PIN JEDEC TRAY
"Material Declaration Sheet"
tsop-ii 66 JEDEC TRAY
k4h511638d
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Untitled
Abstract: No abstract text available
Text: DATA SHEET CLL042-1218A5-273M1A2 and are trademarks or registered trademarks of CITIZEN HOLDINGS CO., LTD. JAPAN. is a trademark or a registered trademark of CITIZEN ELECTRONICS CO., LTD. JAPAN. Ref.CE-P2327 03/13 R1 1013 DATA SHEET
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CLL042-1218A5-273M1A2
CE-P2327
CLL042-1218A5-273M1A2.
2700K
80min.
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Untitled
Abstract: No abstract text available
Text: DATA SHEET CLL042-1218A5-273M1A2 and are trademarks or registered trademarks of CITIZEN HOLDINGS CO., LTD. JAPAN. is a trademark or a registered trademark of CITIZEN ELECTRONICS CO., LTD. JAPAN. Ref.CE-P2327 03/13 DATA SHEET 1/11 1. Scope of Application
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CLL042-1218A5-273M1A2
CE-P2327
CLL042-1218A5-273M1A2.
2700K
80min.
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HYMD512646A8J
Abstract: No abstract text available
Text: 128Mx64 bits Unbuffered DDR SDRAM DIMM HYMD512646A8J DESCRIPTION Preliminary Hynix HYMD512646A L 8J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx64 high-speed memory arrays. Hynix HYMD512646A(L)8J series
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128Mx64
HYMD512646A8J
HYMD512646A
184-pin
64Mx8
400mil
184pin
HYMD512646A8J
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FAH diode
Abstract: D617 M/diode fah 23
Text: Bulletin 12063/A bitemational I»i]Rectifier SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features • High pow er FAST recovery diode series ■ 1.0 to 1.5 ps recovery tim e ■ High voltage ratings up to 1600V ■ High current capability ■ O ptim ized turn on and turn o ff ch a ra cte ristics
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12063/A
SD153N/R
SD153N/R.
D-616
D-617
FAH diode
D617
M/diode fah 23
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L512F
Abstract: ac202a AZ 280 chip AC-202A on line ups circuit schematic diagram E72445
Text: I E5HE537 55E » CRYD0 Ï1 co :_— □Ü0D7GÛ _ — , 1 Tb • CRY 'JM fô U W CLÛfôü@@ 0@@ffi)fi^0€/MQ Ki / î ' ' ; ' -, :j . - Series Type L-Case style - Ceramic Bas.e) , Current . 3 -15 Amps 5 - 25 Amps 6 - 42.5 Amps* Example: L512F
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E5HE537
L512F
E72445)
L512F
ac202a
AZ 280 chip
AC-202A
on line ups circuit schematic diagram
E72445
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L512F
Abstract: gi diode A1525 E72445 cms diode
Text: CRYDOtl co 55E I E5H E537 » :_— _ — , □ □ 0 0 7 D fl 1 T b H i C R Y :m m smDffiOiBd o@@rom^o€/MQ Ki / Ì ' ' ; ' -, :j . - Series Type L-Case style - Ceramic Bas.e , Current . 3 -15 Amps 5 - 25 Amps 6 - 42.5 Amps* Example: L512F
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E5HE537
G007GÃ
L512F
E72445)
gi diode
A1525
E72445
cms diode
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA30N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 90nC Typ. •
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FQA30N40
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF30N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 90nC Typ. •
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FQAF30N40
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1N4461-1N4496
Abstract: 1N1486 IN4484 IN4405 1N4465 1N4469 1N4475 IN449 1N4466 1N4467
Text: POWER ZENERS 1N4461-1N4496 JAN.JANTX &JANTXV 1.5 Watt, Military FEATURES • 5 Times Greater Surge Rating than JAN1N3016 Series • Low Reverse Current: to 50nA • V4 Size of Conventional 1 Watt Zeners DESCRIPTION Fused-in-glass, metallurgically bonded 1.5 watt zeners, qualified to MIL-S-19500/406.
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1N4461-1N4496
JAN1N3016
MIL-S-19500/406.
1N1486
IN4484
IN4405
1N4465
1N4469
1N4475
IN449
1N4466
1N4467
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Untitled
Abstract: No abstract text available
Text: • R A dvanced W 'æ APT pow er Te c h n o l o g y ' io o v 10 M 11 JV R i 44 a 0.011 q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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OT-227
APT10M11
E145592
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IRFP140R
Abstract: st3pf 142R
Text: HARRIS IRFP140R, IRFP141R IRFP142R, IRFP143R N-Channel Power MOSFETs Avalanche Energy Rated A u g u s t 1991 Features Package TO-247 TOP VIEW • 2 7 A and 31 A, 80 V - 1 0 0V • rDS on = 0 .0 7 7 ÎÏ and 0 .0 9 9 f i • Single Pulse A valanche Energy Rated
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IRFP140R,
IRFP141R
IRFP142R,
IRFP143R
O-247
IRFP141R,
IRFP143R
IRFP140R
st3pf
142R
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TMOS E-FET
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MTV16N50E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 16 AMPERES 500 VOLTS RDS on = 0-40 OHM N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination
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MTV16NSOE
0E-05
0E-04
0E-03
0E-02
0E-01
TMOS E-FET
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Untitled
Abstract: No abstract text available
Text: 4305271 D o s m a s STB • H a r r is HAS IRFP140R, IRFP141R IRFP142R, IRFP143R N -C hannel Power MOSFETs Avalanche Energy Rated August 1991 Features Package TO -247 TOP VIEW • 27A and 31 A, 80V - 100V • ros on = 0.0770 and 0.099ÎÎ DRAIN (TAB) • Single Pulse Avalanche Energy Rated
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IRFP140R,
IRFP141R
IRFP142R,
IRFP143R
IRFP141R,
IRFP143R
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str 4479
Abstract: 3N204 3n206 3N204 equivalent 3N205
Text: T Y P ES 3N204, 3N205, 3N206 N -C H A N N E L D U A L-G A T E D EP LETIO N -TYP E IN S U LA T E D -G A T E F IE LD -E FF E C T TR A N S IS TO R S B U L L E T IN N O . D L -S 7 2 1 1 7 1 7 , M A Y 1 97 2 D EPLETIO N -TYPE MOS S ILIC O N TRAN SISTO RS • Monolithic Gate-Protection Diodes
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3N204,
3N205,
3N206
str 4479
3N204
3N204 equivalent
3N205
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