250 A Knife Switch
Abstract: ATEX1160
Text: Process Interface PI/Ex-ID-I/I PI/Ex Output Isolator Process Interface The innovative interface system for process engineering Two switch cabinets in one Process engineering systems are characterized by a large number of different signals for which the wiring,
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ATEX1160
D2239
250 A Knife Switch
ATEX1160
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BAS97ATEX1209
Abstract: ATEX1160 iic isolator xt_3 current transducer AR-1
Text: Process Interface PI/Ex-RPSS-I/I PI/Ex Smart Repeater Power Supply Process Interface The innovative interface system for process engineering Two switch cabinets in one Process engineering systems are characterized by a large number of different signals for which the wiring,
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ATEX1160
D2239
BAS97ATEX1209
ATEX1160
iic isolator
xt_3
current transducer AR-1
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mil 43
Abstract: process 65 die process information process 88
Text: Section 6 Bipolar Transistor Dice Process 03 . 6-4 Process 05 . 6-4
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Untitled
Abstract: No abstract text available
Text: PPH15X_10 TECHNOLOGY The new UMS 150nm GaAs power pHEMT process UMS is now pleased to extend its foundry offer with the introduction of a new 150nm GaAs Power pHEMT process. This process is optimised for wideband high power amplification up to 40GHz with a typical Ft of 65GHz
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PPH15X
150nm
150nm
40GHz
65GHz
750mW/mm
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RH A4 2A 250V
Abstract: oven rtd sensor IEC751 pa2009 PT100 ABB
Text: Data Sheet 100mm Process Recorder SS/SR100B_5 SR100B 3- or 6-trace recording on a 100mm chart – common time base for instant process comparison High clarity liquid crystal display – for process value, units and channel tags Universal process inputs
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100mm
SR100B
IP65/NEMA3,
100mmion.
C100/0700)
SS/SR100B
RH A4 2A 250V
oven rtd sensor
IEC751
pa2009
PT100 ABB
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ARM SRAM compiler
Abstract: poly silicon resistor 2P3M CMOS Process Family polysilicon resistor 6T SRAM SST superflash NMOS-2 BSIM3V3 0.25-um standard cell library
Text: 0.25 µm CMOS Process Family FC025 0.25 µm CMOS process for 2.5V logic and mixed-signal applications Main Process Features with 3.3V or 5V I/O Single Poly and up to 5 Metal Layers FC025 Process section Pad Well Architecture: Retrograde Twin Well Nitride Pad
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FC025
FC025
ARM SRAM compiler
poly silicon resistor
2P3M
CMOS Process Family
polysilicon resistor
6T SRAM
SST superflash
NMOS-2
BSIM3V3
0.25-um standard cell library
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transistor 2N3563
Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .
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Untitled
Abstract: No abstract text available
Text: 9 Micron Metal Gate CMOS Process Process parameters Table 1: Features • Metal Gate Process • 13 µm Metal Pitch 9 µm Units • 16 Volts Maximum Operating Voltage Metal pitch width/space 8/5 µm • Simple Process (7 masks) Contact 8x8 µm • Very Short Cycle Time
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Untitled
Abstract: No abstract text available
Text: 9 Micron Metal Gate CMOS Process Process parameters Table 1: Features • Metal Gate Process • 13 µm Metal Pitch 9 µm Units • 16 Volts Maximum Operating Voltage Metal pitch width/space 8/5 µm • Simple Process (7 masks) Contact 8x8 µm • Very Short Cycle Time
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CS1D-PA207R
Abstract: No abstract text available
Text: PLC-based Process Control Series Programmable Controllers CS1W-LC Loop Control Boards/Units Ver. 3.0 Version Upgrade CS1D-CPU P CS1D Process CPU Units (for Duplex-CPU Systems) WS02-LCTC1-EV5 CX-Process Tool Ver. 5.0 (Version Upgrade) CS1W-P Process Analog I/O Units 8-input Models Added to Series
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WS02-LCTC1-EV5
16-input
NL-2132
CS1D-PA207R
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LM2743
Abstract: LTC3713 TPS54610PWP Altera Hardcopy II family
Text: 11. Power Supply and Temperature Sensing Diode in HardCopy III Devices HIII51011-3.1 Altera HardCopy® III devices and Stratix® III devices are manufactured with different process technologies. The HardCopy III devices are based on a 0.9-V, 40 nm process, while Stratix III devices are manufactured with a 1.1-V, 65 nm process.
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HIII51011-3
LM2743
LTC3713
TPS54610PWP
Altera Hardcopy II family
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GaAs wafer
Abstract: photoresist F. S. TSAI ED34 J.B. Ferguson
Text: Costas Varmazis, Gerald S. D’Urso, Henry Hendriks Process Engineering Group, M/A-COM Inc., Lowell, Mass. How to Process the Backside of GaAs At a Glance The background details of backside GaAs process steps for wafers with through-substrate via holes are reviewed. Process step changes that have recently been implemented in
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900-TC16
Abstract: 900-TC8RGTZ25 900-TC16RGTU25 900-TC32 900-TC16VGTZ25 900-TC32RPZ25 Platinum Resistance Temperature sensor schneider Pt100 sensor 900-TC16ACGTZ25 PL II thermocouple
Text: SELECTION GUIDE BULLETIN 900-TC Single-Loop Electronic Temperature/Process Controllers Bulletin 900-TC Single-Loop Temperature/Process Controller Bulletin 900 — Temperature/Process Controllers Bulletin 900-TC Digital Temperature Controllers Page 4 Bulletin 900-CONV Interface Converter
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900-TC
900-TC
900-CONV
900BuilderLiteTM
900BuilderTM
900-TC8
900-TC16
900-TC32.
900-TC8RGTZ25
900-TC16RGTU25
900-TC32
900-TC16VGTZ25
900-TC32RPZ25
Platinum Resistance Temperature sensor
schneider Pt100 sensor
900-TC16ACGTZ25
PL II thermocouple
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delta rectifier all model
Abstract: BAT54LT1 Wafer MSL LMCFD353WP BAS40-04LT1 BAS40-06LT1 BAS70LT1 zener wafer on semiconductor zener
Text: FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 24-JUNE-2003 SUBJECT: ON Semiconductor Final Product/Process Change Notification 12287 TITLE: Final Notification for Small Signal Schottky Process Consolidation in Zener Rectifier Wafer Fab EFFECTIVE DATE: 24-Aug-2003
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24-JUNE-2003
24-Aug-2003
S20636
RPDR20
BAS40-04LT1
BAS40-06LT1
BAS40LT1
BAS70-04LT1
BAS70LT1
BAT54ALT1
delta rectifier all model
BAT54LT1
Wafer MSL
LMCFD353WP
BAS40-04LT1
BAS40-06LT1
BAS70LT1
zener wafer
on semiconductor zener
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8XC196MD
Abstract: PX29 8xc196mc user
Text: 8XC196MD PROCESS INFORMATION Table 2. 8XC196MD Memory Map This device is manufactured on PX29.5, a CHMOS III-E process. Additional process and reliability information is available in the Intel Quality System Handbook. Description External Memory or I/O Address
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8XC196MD
8XC196MD
06000H
2080H
207FH
205EH
205DH
2040H
203FH
2030H
PX29
8xc196mc user
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81F64842B
Abstract: No abstract text available
Text: Introduction This document outlines Atmel’s process for conversion from FPGA/CPLD to ULC. Figure 1. ULC Conversion Flow Process FPGA/CPLD Netlist Retarget ULC Conversion Process Design & Supply Rules Verification Bonding Creation & Verification Scan, Bist, Jtag Insertion, ATPG Fault Coverage
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03-Dec-01
81F64842B
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semefab
Abstract: No abstract text available
Text: PPS 40X 3µm Silicon Gate CMOS Process Preview Datasheet Rev 1.0 June 2000 DESCRIPTION FEATURES The PPS 40X is an industry standard, mixed signal, precise analogue process. This 3 Micron, P-Well process features optional double polysilicon capacitors. The
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Semefab Scotland
Abstract: CMOS Process 3um semefab
Text: PPS 403 3 Micron Silicon Gate, Opto CMOS Process Preliminary Data Rev 1.0 June 2000 DESCRIPTION FEATURES The PPS 403 is an industry standard, mixed signal, precise analogue process. This 3 Micron, P-Well process features optional double polysilicon capacitors. The
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Yokogawa differential pressure capillary
Abstract: No abstract text available
Text: Process chemical seals Series D900 - D920 Various types of ISO- and ANSI-compliant flanges available on request High temperature applications up to 400°C Compatible with process pressure transmitters D9xx process chemical seals are specially designed to equip various measu‑
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PN100
PN150
PN250
PN420
Yokogawa differential pressure capillary
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8XC196KB
Abstract: P629 270909
Text: 8XC196KB/8XC196KB16 Table 2. 8XC196KB Memory Map PROCESS INFORMATION This device is manufactured on P629.0 and 629.1, a CHMOS III-E process. Additional process and reliability information is available in the Intel Quality System Handbook:
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8XC196KB/8XC196KB16
8XC196KB
2080H
207FH
2040H
203FH
2030H
202FH
2020H
201FH
P629
270909
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ns5-SQ10b-v2
Abstract: omron ns8-tv00b-v2 CS1G-CPU43H USER Manual cs1w-ID211 XW2Z-S002 omron ns5 hmi CS1G-CPU44H Ad161 omron SYSMAC CS1G-CPU44H DRT1-AD04
Text: PLC-based Process Control Series Programmable Controllers CS1W-LC CS1D-CPU Loop Control Boards/Units Ver. 3.5 P CS1D Process CPU Units for Duplex-CPU Systems Fully Integrated Sequence and Process Control for the Ideal Control System for Every Application
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f1-388
847-843-7900/Fax:
6835-3011/Fax:
21-5037-2222/Fax:
P051-E1-09
ns5-SQ10b-v2
omron ns8-tv00b-v2
CS1G-CPU43H USER Manual
cs1w-ID211
XW2Z-S002
omron ns5 hmi
CS1G-CPU44H
Ad161
omron SYSMAC CS1G-CPU44H
DRT1-AD04
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Untitled
Abstract: No abstract text available
Text: Hy Custom Hybrid ICs Hybrid IC component specifications-BX series Item BX- 1 Process general process BX-II Double side through-holes Chip size Density (high-density process) Thickness 0.8mm, 4 layers BX- III (high-density process) Thickness 0.8mm, 4 to 6 layers
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LL--41
-65mm
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Untitled
Abstract: No abstract text available
Text: ALL E GR O MICROSYSTEMS INC S3 D • □SDMSSfl D0G37L.1 S ■ AL GR T-91-01 PROCESS NJ32 Process NJ32 N-Channel Junction Field-Effect Transistor Process NJ32 is an N-channel junction field-effect transistor designed for use as a general-purpose audio amplifier. It is similar to Process NJ16 in basic
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D0G37L
T-91-01
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omron k3nx operating manual
Abstract: OMRON OC 222 CH K3NX-AD1A omron k3nx K3NX-VD2A K3NX-VD1A omron* AOI K3NX
Text: Process Meter omRon Process Meter omRon K3NX Process Meter Operation Manual Produced January 1998 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.
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N90-E1-1
N90-E1-1
0198-2M
omron k3nx operating manual
OMRON OC 222 CH
K3NX-AD1A
omron k3nx
K3NX-VD2A
K3NX-VD1A
omron* AOI
K3NX
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