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    FDMS0310

    Abstract: No abstract text available
    Text: FDMS0310S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 mΩ Features General Description The FDMS0310S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		PDF FDMS0310S FDMS0310S FDMS0310

    Untitled

    Abstract: No abstract text available
    Text: FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 mΩ Features General Description „ Max rDS on = 53 mΩ at VGS = -10 V, ID = -4.4 A „ Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A „ Very low Rds-on in Mid-Voltage P-Channel silicon technology


    Original     		PDF FDMS86263P

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF

    PQFN08A

    Abstract: FDMS86101A
    Text: FDMS86101A N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86101A PQFN08A FDMS86101A

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description „ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF FDMS8560S FDMS8560S

    Untitled

    Abstract: No abstract text available
    Text: FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 mΩ Features General Description „ Max rDS on = 53 mΩ at VGS = -10 V, ID = -4.4 A „ Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A „ Very low Rds-on in Mid-Voltage P-Channel silicon technology


    Original     		PDF FDMS86263P

    Untitled

    Abstract: No abstract text available
    Text: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description ̈ Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMS7678

    MO-240

    Abstract: No abstract text available
    Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A ̈ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMS8018 MO-240

    RCA 900 mhz speakers

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description „ Max rDS on = 1.5 mΩ at VGS = 10 V, ID = 33 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF FDMS8558S FDMS8558S RCA 900 mhz speakers

    FDMS86310

    Abstract: No abstract text available
    Text: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description „ Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		PDF FDMS86310 FDMS86310

    MO-240

    Abstract: FDMS86101
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86101 FDMS86101 MO-240

    Untitled

    Abstract: No abstract text available
    Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 49 A, 1.8 mΩ Features General Description „ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMS8018 FDMS8018

    PQFN08A

    Abstract: No abstract text available
    Text: FDMS8333L N-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 mΩ Features General Description „ Max rDS on = 3.1 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		PDF FDMS8333L PQFN08A

    Untitled

    Abstract: No abstract text available
    Text: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description ̈ Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		PDF FDMS86310

    Untitled

    Abstract: No abstract text available
    Text: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description „ Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMS7678 FDMS7678

    FDMS8018

    Abstract: MO-240
    Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description „ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMS8018 FDMS8018 MO-240

    PQFN08AREV6

    Abstract: FDMS FDMS86101
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86101 PQFN08AREV6 FDMS FDMS86101

    Untitled

    Abstract: No abstract text available
    Text: FDMS0309AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 3.5 mΩ Features General Description The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		PDF FDMS0309AS FDMS0309AS

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description ̈ Max rDS on = 2.8 mΩ at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF

    FDMS86101

    Abstract: No abstract text available
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86101 FDMS86101

    Untitled

    Abstract: No abstract text available
    Text: FDMS8333L N-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 mΩ Features General Description „ Max rDS on = 3.1 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		PDF FDMS8333L FDMS8333L

    MO-240

    Abstract: PQFN08AREV6
    Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description „ Max rDS on = 2.8 mΩ at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF FDMS8570S FDMS8570S MO-240 PQFN08AREV6

    PQFN08AREV6

    Abstract: No abstract text available
    Text: FDMS7560S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features General Description The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		PDF FDMS7560S FDMS7560S PQFN08AREV6

    FDMS86101

    Abstract: No abstract text available
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86101 FDMS86101