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Abstract: No abstract text available
Text: Information 16 M DRAM DATA COLLECTION 2M-word by 8-bit, Revision P Document No. M12859XJ1V0IF00 1st edition Date Published September 1997 N 1997 Printed in Japan [MEMO] 2 SUMMARY OF CONTENTS CHAPTER 1 DRAM PROCESS .
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M12859XJ1V0IF00
PPD42S16805L,
4216805L.
PPD42S17805L,
4217805L.
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Abstract: No abstract text available
Text: {IPD4216805 2M x 8-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ¿¿PD4216805 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 2,097,152 words by 8 bits. A single-transistor dynamic
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uPD4216805
28-Pin
nPD4216805G5-XX
PD4216805
64-ms
6805G5-50-7JD
/PD4216805G5-60-7JD
//PD4216805G5-70
pPD4216805G5-50-7KD
iPD4216805G5-60-7KD
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Abstract: No abstract text available
Text: NEC M O S INTEGRATED CIRCUIT /¿ P D 4 2 1 6 8 0 5 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE DESCRIPTION The /iPD4216805 is a 2 097 152 words by 8 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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/iPD4216805
pPD4216805
28-pin
fiPD4216805-50
//PD4216805-60
b427525
00S4T3S
PD4216805
/iPD4216805.
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