nec D19
Abstract: 1S945 PD2845GR PPD2845GR PPD2845GR-E1 PPD2845GR-E2 DIODE D16 d11u UPD284 PPD28
Text: DATA SHEET SHEET DATA CMOS DIGITAL INTEGRATED CIRCUITS PPD2845GR 1 V, 1.3 mA, 94MHz PLL SYNTHESIZER LSI FOR PAGER SYSTEM DESCRIPTION PPD2845GR is a PLL synthesizer LSI for pager system. This LSI is manufactured using low voltage CMOS process and therefore realized the low power consumption PLL operated on 1 V, 1.3 mA. This LSI is packaged in 16
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PPD2845GR
94MHz
PPD2845GR
nec D19
1S945
PD2845GR
PPD2845GR-E1
PPD2845GR-E2
DIODE D16
d11u
UPD284
PPD28
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Untitled
Abstract: No abstract text available
Text: NEC pPD28C05 512 X 8-BIT CMOS E EPROM NEC Electronics Inc. Description Pin Configuration The juPD28C05 is an electrically erasable and program mable read-only memory EEPROM organized as 512 words by 8 bits. The device operates from a + 5-volt power supply and is fabricated w ith an advanced CMOS
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pPD28C05
juPD28C05
24-Pin
nPD28C05
mPD28C05
/iPD28C05
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. pPD28C256 32,768 X 8-Bit CMOS EEPROM Description Pin Configuration The /JPD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga nized as 32,768 x 8 bits and fabricated with an ad vanced CMOS process for high performance and low
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pPD28C256
/JPD28C256
144-bit
28-Pin
64-byte
7D-13
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D28C256
Abstract: pd28c256
Text: NEC JIPD28C256 32,768 X 8-Bit CMOS EEPROM NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configuration The pPD28C256 is a 262,144-bit electrica lly erasable and program mable read-only memory EEPROM orga nized as 32,768 x 8 bits and fabricated w ith an ad
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uPD28C256
pPD28C256
144-bit
/JPD28C256
64-byte
D28C256
pd28c256
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6066B
Abstract: nec eeprom 1991 AK 1021
Text: NEC NEC Electronics Inc. JUPD28C64 8192 X 8-Bit CMOS EEPROM The pPD28C64 is a 65,536-bit electrically erasable and programmable read-only memory EEPROM organized as 8,192 x 8 bits and fabricated w ith an advanced CMOS process for high performance and low power consump
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uPD28C64
536-bit
iPD28C64
32-byte
pPD28C64
28-pin
JUPD28C64
28-Pln
83IH--6467B
JJPD28C64
6066B
nec eeprom 1991
AK 1021
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d28c256cz
Abstract: uPD28C256 WPH-2 BLC10 PD28C256
Text: N E C ELECTRONICS INC T^íMá'i ' L^lMit W NEC Electronics Inc. tlE D • b42?S2S 003544b 217 ■ NECE PPD28 C 256 32,768 X 8 -Bit CMOS EEPROM Description Pin Configuration The /¿PD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga
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uPD28C256
PD28C256
144-bit
/JPD28C256
64-byte
83IH-689SB
d28c256cz
WPH-2
BLC10
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d28c64
Abstract: No abstract text available
Text: NEC NEC ELECTRONICS INC LIE D • t.4275ES GÜ35H3t. 37fl H N E C E pPD28C64 8192 X 8-Bit NEC Electronics Inc. CMOS EEPROM Description Pin Configuration The/iPD28C64 is a 65,536-bit electrically erasable and programmable read-only memory EEPROM orga nized as 8,192 x 8 bits and fabricated w ith an advanced
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4275ES
35H3t.
uPD28C64
The/iPD28C64
536-bit
/iPD28C64
32-byte
juPD28C64
28-pin
d28c64
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PPD28
Abstract: No abstract text available
Text: NEC JUPD28C64 8192 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ftPD28C64 is a 65,536-bit electrically erasable and programmable read-only memory EEPROM organized as 8,192 x 8 bits and fabricated w ith an advanced CMOS process for high performance and low power consump
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JUPD28C64
ftPD28C64
536-bit
28-Pin
pPD28C64
32-byte
nPD28C64
JJPD28C64
PPD28
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D28C05
Abstract: AIPD28C05 fjs 500
Text: N E C ELECTRONICS INC bl E T> • bM27S2S 003542b fk fM ä Y " MET * N E C E fiPD28C05 512 X 8-BIT CMOS EEPROM NEC Electronics Inc. 1 3 ' 2 ? Description Pin Configuration The fjPD28C05 is an electrically erasable and program mable read-only memory EEPROM organized as 512
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bM27S2S
003542b
uPD28C05
fjPD28C05
PD28C05
24-pin
ConfM27S
D03543
iPD28C05
MIH-62248
D28C05
AIPD28C05
fjs 500
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6023B
Abstract: PD28C04 ho27a
Text: NEC JJPD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ¿jPD28C04 is a 4,096-bit e le ctrica lly erasable and program m able read-only m em ory EEPROM orga nized as 512 x 8 bits and fab ricated w ith an advanced CMOS process for high perform ance and low power
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uPD28C04
24-Pin
jPD28C04
096-bit
D28C04
pPD28C04
6023B
PD28C04
ho27a
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D28C04
Abstract: 6023B upd28c04 PD28C04
Text: N E C ELECTRONI CS NEC INC blE D L.427525 DD3S417 NEC Electronics Inc. Description Pin Configuration The jl/PD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga nized as 512 x 8 bits and fabricated with an advanced
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DD3S417
uPD28C04
24-Pin
/PD28C04
096-bit
iPD28C04
/iPD28C04
D28C04
6023B
PD28C04
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D28C64
Abstract: CCS1 PD28C64
Text: SEC JJPD28C64 8192 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /JPD28C64 is a 65,536-bit electrically erasable and program m able read-only m em ory EEPROM orga nized as 8,192 x 8 bits and fab ricated with an advanced CM O S process for high p erform ance and low power
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uPD28C64
28-Pin
/JPD28C64
536-bit
32-byte
28-pining
83IH-6467B
pPD28C64
D28C64
CCS1
PD28C64
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Untitled
Abstract: No abstract text available
Text: NEC MPD28C05 512 X 8-BIT CMOS E EPROM NEC Electronics Inc. Description Pin Configuration The fxPD28C05 is an electrically erasable and program mable read-only memory EEPROM organized as 512 words by 8 bits. The device operates from a + 5-volt power supply and is fabricated with an advanced CMOS
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uPD28C05
24-Pin
fxPD28C05
iPD28C05
mPD28C05
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PC1026C
Abstract: PC1181H pc1185h pc1171c PC1181 PC1178C JE9016 7 segment 24 hr clock circuit PC2002 2SK49
Text: d F | h4B7SE5 001741^ D ^ N E C ELECTRONICS INC / “ V R /iQ S D I G I T A L I N T E G R A T E D • . C S R C U ÎT ¿ ¿ P D 2 8 1 3 C CLOCK AND RADIO FREQUENCY CO UNTER/DISPLAY C IR C U IT CM OS LSI The /iPD2813C is a CMOS LSI very suitable for U.S. band automotive radios and stereos.
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uPD2813C
E9016
JE9011
iPC587C
PC1026C
PC1187V
JES014
PC1181H/82H
iPC2002
PC1181H
pc1185h
pc1171c
PC1181
PC1178C
JE9016
7 segment 24 hr clock circuit
PC2002
2SK49
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nec d28c04
Abstract: No abstract text available
Text: NEC #|PD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /jPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga nized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power
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uPD28C04
096-bit
/UPD28C04
24-pin
PD28C04
pPD28C04
/iPD28C04
pPD28C04
nec d28c04
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Untitled
Abstract: No abstract text available
Text: SEC fiPD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /iPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM organized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power
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fiPD28C04
/iPD28C04
096-bit
24-Pin
/aPD28C04
/xPD28C04
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Untitled
Abstract: No abstract text available
Text: NEC JJPD28C256 32,768 X 8-Bit CMOS EEPROM NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configuration The /JPD28C256 is a 262,144-bit electrically erasable and program mable read-only memory EEPROM orga nized as 32,768 x 8 bits and fabricated w ith an ad
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JJPD28C256
/JPD28C256
144-bit
28-Pin
/L/PD28C256
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24-Pin Plastic DIP
Abstract: uPD28C05
Text: NEC NEC Electronics Inc. fiPD28C05 512 X 8-BIT CMOS EEPROM Description Pin Configuration The /JPD28C05 is an electrically erasable and program mable read-only m em ory EEPROM organized as 512 words by 8 bits. The device operates from a + 5-volt power sup ply and is fab rica te d w ith an advanced
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uPD28C05
/JPD28C05
24-pin
fiPD28C05
pPD28C05
24-Pin Plastic DIP
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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uPD28C05
Abstract: No abstract text available
Text: NEC JUPD28C05 512 X 8-BIT CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /^PD28C05 is an ele ctrica lly erasable and program mable read-only m em ory EEPROM organized as 512 words by 8 bits. The device operates from a + 5-volt power sup ply and is fab ricated w ith an advanced
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uPD28C05
PD28C05
/JPD28C05
24-pin
83IH-6223B
pPD28C05
63IH-6224B
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PD28C04
Abstract: 62b1
Text: NEC ffPD28C04 512 X 8-Bit CMOS E EPROM NEC Electronics Inc. Description Pin Configuration The fiPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory E EPROM organized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power
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uPD28C04
24-Pln
fiPD28C04
096-bit
nPD28C04
24-pin
/iPD28C04
iPD28C04
PD28C04
62b1
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D28C256
Abstract: No abstract text available
Text: NEC JUPD28C256 32,768 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ¿/PD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga nized as 32,768 x 8 bits and fabricated with an ad vanced CMOS process for high performance and low
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uPD28C256
/PD28C256
144-bit
iPD28C256
64-byte
The/JPD28C256
28-pin
831H--<
JHPD28C256
D28C256
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