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    POWERMOS TRANSISTORS TO220 PACKAGE Search Results

    POWERMOS TRANSISTORS TO220 PACKAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    POWERMOS TRANSISTORS TO220 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT263-5

    Abstract: 075E05 MS-012AA SC13 SO24 SSOP16 SSOP24 4 PIN THROUGH HOLE TRANSISTORS SOT-263
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines PowerMOS transistors 1998 Apr 02 File under Discrete Semiconductors, SC13 Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant)


    Original     		PDF OT54variant O-92variant) O-220AB) OT96-1 OT137-1 OT186 O-220 OT186A O-220) OT223 SOT263-5 075E05 MS-012AA SC13 SO24 SSOP16 SSOP24 4 PIN THROUGH HOLE TRANSISTORS SOT-263

    PowerMOS Transistors

    Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
    Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)


    Original     		PDF OT54variant O-92variant) O-220AB) OT96-1 OT137-1 OT186 O-220 OT186A O-220) OT223 PowerMOS Transistors 075E05 MS-012AA SO24 SSOP16 SSOP24

    MOSFET IGBT THEORY AND APPLICATIONS

    Abstract: tv deflection theory PHILIPS MOSFET igbt BUK7508-55 equivalent SOT404 mosfet cross reference "Power Semiconductor" Philips igbt philips PHILIPS MOSFET PowerMos transistors TO220 package
    Text: DATA SHEET Introduction PowerMOS Transistors including TOPFETs and IGBTs 1996 Dec 12 Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Introduction therefore be identified easily as they have a 4 digit ‘type code’ after the BUK prefix.


    Original     		PDF BUK7508-55 MOSFET IGBT THEORY AND APPLICATIONS tv deflection theory PHILIPS MOSFET igbt BUK7508-55 equivalent SOT404 mosfet cross reference "Power Semiconductor" Philips igbt philips PHILIPS MOSFET PowerMos transistors TO220 package

    AN9409

    Abstract: transistors 9409 477J mosfet SOA testing Harris Semiconductor to220 power transistor RFD3055 RFP70N06 DB233 transistors+9409
    Text: Harris Semiconductor No. AN9409 Harris Power MOSFETs August 1994 SAFE OPERATING AREA TESTING WITHOUT A HEAT SINK Authors: Wally Williams and Stan Benczkowski Introduction package at a very predictable rate since constant power circuits are usually used in SOA testing. There is also heat flow


    Original     		PDF AN9409 1-800-4-HARRIS AN9409 transistors 9409 477J mosfet SOA testing Harris Semiconductor to220 power transistor RFD3055 RFP70N06 DB233 transistors+9409

    Infineon technology roadmap for mosfet

    Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
    Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial


    Original     		PDF KMZ60 KMA210 KMA215 Infineon technology roadmap for mosfet LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA

    vbg marking code transistor

    Abstract: 00E-12 philips Power MOSFET Selection Guide
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch DESCRIPTION BUK210-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL


    Original     		PDF BUK210-50Y 29-May-02) vbg marking code transistor 00E-12 philips Power MOSFET Selection Guide

    mosfet SOA testing

    Abstract: AN9409 RFP70N06 RFD3055 mosfet transistor checking and testing 407 transistor
    Text: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated junction temperature. The circuits to maintain a fixed current


    Original     		PDF

    TO247 package

    Abstract: X2 mos PHB11N50E PHP11N50E PHW11N50E
    Text: Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES PHP11N50E, PHB11N50E, PHW11N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP11N50E, PHB11N50E, PHW11N50E PHP11N50E O220AB) TO247 package X2 mos PHB11N50E PHW11N50E

    PHB9N60E

    Abstract: PHP9N60E PHW9N60E
    Text: Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES PHP9N60E, PHB9N60E, PHW9N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP9N60E, PHB9N60E, PHW9N60E PHP9N60E O220AB) PHW9N60Eion PHB9N60E PHW9N60E

    mosfet SOA testing

    Abstract: AN-7516 RFD3055 RFP70N06 TO-251 fairchild
    Text: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Title N75 ubct AFE PERTING REA ESTG ITHUT EAT NK) utho ) eyords reor ) OC FO fark ageode seute OCEW fark Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated


    Original     		PDF

    PowerMos transistors TO220 package

    Abstract: PHB13N40E PHP13N40E PHW13N40E to247 pcb footprint
    Text: Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES PHP13N40E, PHB13N40E, PHW13N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP13N40E, PHB13N40E, PHW13N40E PHP13N40E O220AB) PowerMos transistors TO220 package PHB13N40E PHW13N40E to247 pcb footprint

    mosfet SOA testing

    Abstract: AN-7516 RFD3055 RFP70N06 TO-251 fairchild
    Text: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Title N94 bt AFE ERING REA STG THUT AT NK utho eyrds er ) OCI O frk geode setes OCEW frk Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated


    Original     		PDF

    PHP6N60

    Abstract: BUK457-400B PHB10N40E PHP10N40 PHP10N40E PHW10N40E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP10N40E, PHB10N40E, PHW10N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP10N40E, PHB10N40E, PHW10N40E PHP10N40E O220AB) PHW10N4n PHP6N60 BUK457-400B PHB10N40E PHP10N40 PHW10N40E

    PHD2N60E

    Abstract: PHB2N60E PHP1N60 PHP2N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP2N60E, PHB2N60E, PHD2N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP2N60E, PHB2N60E, PHD2N60E PHP2N60E O220AB) PHB2N60E PHD2N60E PHP1N60

    PHP6N50E

    Abstract: PHB6N50E PHP3N60 PHP4N50 USON-10
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N50E, PHB6N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP6N50E, PHB6N50E PHP6N50E O220AB) PHB6N50E PHP3N60 PHP4N50 USON-10

    PHB6N60E

    Abstract: PHP3N60 PHP6N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N60E, PHB6N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP6N60E, PHB6N60E PHP6N60E O220AB) PHB6N60E PHP3N60

    PHB3N40E

    Abstract: PHD3N40E PHP2N40 PHP3N40E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N40E, PHB3N40E, PHD3N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP3N40E, PHB3N40E, PHD3N40E PHP3N40E O220AB) PHB3N40E PHD3N40E PHP2N40

    PHB3N40E

    Abstract: PHD3N40E PHP2N40 PHP3N40E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N40E, PHB3N40E, PHD3N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP3N40E, PHB3N40E, PHD3N40E PHP3N40E O220AB) PHB3N40E PHD3N40E PHP2N40

    PHB6N60E

    Abstract: PHP3N60 PHP6N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N60E, PHB6N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP6N60E, PHB6N60E PHP6N60E O220AB) PHB6N60E PHP3N60

    PHB3N60E

    Abstract: PHP2N60 PHP3N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N60E, PHB3N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP3N60E, PHB3N60E PHP3N60E O220AB) PHB3N60E PHP2N60

    PHP8N50E

    Abstract: BUK457-500B PHB8N50E PHP6N60 PHP8N50 PHW8N50E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP8N50E, PHB8N50E, PHW8N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP8N50E, PHB8N50E, PHW8N50E PHP8N50E O220AB) PHW8N50E BUK457-500B PHB8N50E PHP6N60 PHP8N50

    BUK457-600B

    Abstract: PHB7N60E PHP6N60 PHP7N60E PHW7N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP7N60E, PHB7N60E, PHW7N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP7N60E, PHB7N60E, PHW7N60E PHP7N60E O220AB) PHW7N60E BUK457-600B PHB7N60E PHP6N60

    PHB3N50E

    Abstract: PHP2N60 PHP3N50 PHP3N50E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N50E, PHB3N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP3N50E, PHB3N50E PHP3N50E O220AB) PHB3N50E PHP2N60 PHP3N50

    TO-92variant

    Abstract: No abstract text available
    Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)


    OCR Scan     		PDF OT54variant O-92variant) O-220AB) OT96-1 OT137-1 T0-220 OT186A O-220) OT223 OT226 TO-92variant