Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWERMOS Search Results

    SF Impression Pixel

    POWERMOS Price and Stock

    ROHM Semiconductor RUF015N02TL

    MOSFETs Med Pwr, Sw MOSFET P Chan, 20V, 1.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RUF015N02TL Reel 84,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.115
    		Buy Now

    ROHM Semiconductor RV2C010UNT2L

    MOSFETs 20V 1A Nch Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RV2C010UNT2L Reel 24,000 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.066
    		Buy Now

    Vishay Intertechnologies SIHD1K4N60E-GE3

    MOSFETs 600V Vds 30V Vgs DPAK (TO-252)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIHD1K4N60E-GE3 Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.419
    		Buy Now

    Vishay Intertechnologies SIR826BDP-T1-RE3

    MOSFETs 80V Vds 20V Vgs PowerPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIR826BDP-T1-RE3 Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.582
    		Buy Now

    Vishay Intertechnologies SIJ186DP-T1-GE3

    MOSFETs 60V Vds 20V Vgs PowerPAK SO-8L
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIJ186DP-T1-GE3 Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.41
    		Buy Now
    Find more POWERMOS price and stock on Findchips.com

    POWERMOS Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PowerMOS Philips Semiconductors PowerMOS Transistors Understanding the Data Sheet Original PDF
    Power MOSFET single-shot and repetitive avalanche ruggedness rating NXP Semiconductors AN10273 - Power MOSFET single-shot and repetitive avalanche ruggedness rating Original PDF
    PowerMOS Transistors Philips Semiconductors Understanding the Data Sheet Original PDF

    POWERMOS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    uu9.8

    Abstract: 7D471K 20/UU9.8
    Text: UNISONIC TECHNOLOGIES CO., LTD UPS4602 LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE POWER SWITCH WITH ZERO CURRENT DETECTION „ DESCRIPTION The UTC UPS4602 is an integrated PWM controller and PowerMOSFET specifically designed for switching operation with


    Original     		UPS4602 UPS4602 QW-R119-019 uu9.8 7D471K 20/UU9.8 PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerMOSFET Nch •外観図 P6B40HP2 OUTLI NE Package：FB t ：mm Uni 2.3 6.6 400V6A 特 長 品名略号 Type No. 煙面実装タイプ 煙低ノイズ 煙低容量 / dt耐量 煙高アバランシェ耐量高 di P6B40H2 000000 ロット管理記号（例）


    Original     		P6B40H2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerMOSFET Nch •外観図 P3B28HP2 OUTLI NE Package：FB t ：mm Uni 6.6 280V3A 2.3 特 長 品名略号 Type No. 煙面実装タイプ 煙低ノイズ 煙低容量 / dt耐量 煙高アバランシェ耐量高 di P3B28H2 000000 ロット管理記号（例）


    Original     		P3B28H2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerMOSFET •外観図 F21F60CPM OUTLI NE Package：FTO220A （3pi n） （例） ロット記号 Date code 600V21A t ：mm Uni 4.5 10.０ 煙高耐圧 煙低オン抵抗 煙高速スイッチング 品名略号 Type No. 15.０ 管理番号（例） Control No.


    Original     		21F60CPM PDF

    BUK555-60A

    Abstract: BUK555-60B T0220AB
    Text: PHILIPS INT ER NA TI O N AL bSE D • TllQAEb 0DbM241 Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is Intended for use in


    OCR Scan     		0DbM241 BUK555-60A/B T0220AB BUK555 -ID/100 BUK555-60A BUK555-60B PDF

    BUK455-500B

    Abstract: T0220AB
    Text: PHILIPS INTERNATIONAL bSE D B 711Gâ2ti GObMGTb SGÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		BUK455-500B T0220AB 711DflEb BUK455-500B PDF

    BUK542

    Abstract: BUK542-100A BUK542-100B
    Text: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL


    OCR Scan     		711QSSb BUK542-100A/B -SOT186 BUK542 -100A -100B BUK542-100A BUK542-100B PDF

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B PDF

    BUK10B-50US

    Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
    Text: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic


    OCR Scan     		7110fl2b BUK106-50L7S BUK106-50LP/SP BUK106-50L/S BUK106-50I7S BUK10B-50US philips ldh d6506 BUK106-50L BUK106-50S buk106 PDF

    BUK426-100B

    Abstract: transistor BU 110 BUK426-100A
    Text: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		BUK426-1OOA/B 7110fl2t D0441EG OT199 -100A -100B BUK426-100B transistor BU 110 BUK426-100A PDF

    ht 25 transistor

    Abstract: BUK638-500B
    Text: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		BUK638-500B 711DflSb ODb431S ht 25 transistor PDF

    NDS 40-20

    Abstract: BUK437-500B DIODE BB2
    Text: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		711002b BUK437-500B NDS 40-20 BUK437-500B DIODE BB2 PDF

    BUK543

    Abstract: BUK543-60A BUK543-60B TTA10
    Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack


    OCR Scan     		BUK543-60A/B -SOT186 BUK543 DS10NÃ BUK543-60A BUK543-60B TTA10 PDF

    BUK455-600B

    Abstract: LG 631
    Text: PHILIPS bSE J> INTERNATIONAL m 711Gfl2b 0Db4101 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		711Gfl2b 0Db4101 BUK455-600B PINNING-T0220AB BUK455-600B LG 631 PDF

    BUK637-400B

    Abstract: No abstract text available
    Text: PHILIPS IN TE RN AT IO NA L bSE ]> • 711DÖSb 0DbM3Gl Philips Semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particular!/ suitable


    OCR Scan     		BUK637-400B BUK637-400B PDF

    BUK452-100B

    Abstract: BUK452-100A T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		7110fl2b BUK452-100A/B T0220AB BUK452-100B BUK452-100A T0220AB PDF

    IL 741

    Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
    Text: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In


    OCR Scan     		711Dfl5t, BUK441-100A/B BUK441 -100A -100B -SOT186 IL 741 philips lps 100 BUK441-100A BUK441-100B P101 PDF

    K438-1000A

    Abstract: BUK438-1000A BUK438-1000B k4381
    Text: 7=3 f - Æ Ph ilips C o m p o n e n ts Data sheet status Preliminary specification date o f issue March 1991 BUK438-1000A/B PowerMOS transistor SbE D PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a


    OCR Scan     		BUK438-1OOOA/B 711002b BUK438 -1000A -1000B BUK438-1000A/B 711062b T-39-I5 K438-1000A BUK438-1000A BUK438-1000B k4381 PDF

    TRANSISTOR BO 344

    Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		7110flSb BUK455-100A/B T0220AB BUK455 -100A -100B TRANSISTOR BO 344 TRANSISTOR BO 341 tny 175 BUK455-100A BUK455-100B data transistor 1650 PDF

    k426

    Abstract: bu 515 BUK426-50A transistor 03e Transistor Bo 17
    Text: PHILIPS 5L.E T> INTERNATIONAL 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 B U K 4 2 6 - 6 0 A /B PowerMOS transistor 7^ 39- t/ Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		BUK426-50A/B K426-60A/B -39-i/ PINNING-SOT199 BUK426 k426 bu 515 BUK426-50A transistor 03e Transistor Bo 17 PDF

    BUK445-500B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		711062b BUK445-500B -SOT186 BUK445-500B PDF

    BUK427-600B

    Abstract: 18-SO BUK427-600 d0411
    Text: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.


    OCR Scan     		BUK427-600 711Dfl2t. D0411S0 -SOT199 BUK427-600B 18-SO d0411 PDF

    buk657-500

    Abstract: BUK657-500B T0220AB transistor D 588
    Text: fc>5E T> PHILIPS INTERNATIONAL B VllDBEb 0Db432b =137 HIPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		00b432b BUK657-500B T0220AB buk657-500 transistor D 588 PDF

    BUK443

    Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B
    Text: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		711Dfi2b BUK443-60A/B OT186 BUK443 BUK443-60A BUK443-60B TRANSISTOR C 557 B PDF